SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.110 ID (A) - 5.7 Configuration Single PowerPAK 1212-8 S 3.3 mm S • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3.3 mm 1 S 2 • TrenchFET® Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified • 100 % Rg Tested G S 3 G 4 D 8 D 7 D 6 D D 5 Bottom View Part Marking Code: Q002 P-Channel MOSFET ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free SQ7415EN-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 10 s STEADY STATE Drain-Source Voltage VDS - 60 - 60 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Currenta TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Maximum Power Dissipationb TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range - 5.7 - 3.6 - 4.6 - 2.9 IS - 3.2 - 1.3 IDM - 30 - 30 3.8 1.5 2 0.8 - 55 to + 175 - 55 to + 175 260 260 TYPICAL MAXIMUM 26 33 ID PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) SYMBOL PCB Mountc RthJA RthJC 65 81 1.9 2.4 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-1462 Rev. E, 01-Jul-13 Document Number: 74488 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415EN www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS VGS = 0 V, ID = - 250 μA - 60 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - -3 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V, VDS = - 60 V - - -1 IDSS VGS = 0 V, VDS = - 60 V, TJ = 125 °C - - -5 VGS = 0 V, VDS = - 60 V, TJ = 175 °C - - - 150 VGS = - 10 V, VDS- 5 V - 20 - - VGS = - 10 V, ID = - 5.7 A - 0.054 0.065 VGS = - 4.5 V, ID = - 4.4 A - 0.090 0.110 VGS = - 10 V, ID = - 5.7 A, Tj = 125 °C - - 0.104 VGS = - 10 V, ID = - 5.7 A, Tj = 175 °C - - 0.127 VDS = - 15 V, ID = - 5.7 A 11 - - - 940 1175 - 151 189 - 54 68 ID(on) RDS(on) gfs V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = - 10 V, VDS = - 30 V, ID = - 5.7 A - 15 25 - 4 - - 3.2 - Rg f = 1 MHz 0.8 1.8 2.8 td(on) VDD = - 30 V, RL = 30 - 12 20 tr - 12 20 td(off) - 22 35 - 16 25 tf Source-Drain Diode Ratings and Characteristics TC = 25 pF nC ns °Cb Pulsed Currenta ISM - - - 30 A Forward Voltage VSD IF = 85 A, VGS = 0 V - - - 1.2 V trr IF = 3.2 A, dI/dt = 100 A/μs - 45 90 ns Reverse Recovery Time Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1462 Rev. E, 01-Jul-13 Document Number: 74488 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415EN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 4V 8 12 8 TC = 125 °C 4 4 25 °C 3V 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) Output Characteristics 3 4 5 Transfer Characteristics 1200 1000 0.16 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 VGS - Gate-to-Source Voltage (V) 0.20 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 Ciss 800 600 400 Coss 200 0.00 Crss 0 0 4 8 12 16 20 0 10 ID - Drain Current (A) 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 R DS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) - 55 °C VDS = 30 V ID = 5.7 A 8 6 4 2 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge S13-1462 Rev. E, 01-Jul-13 16 VGS = 10 V ID = 5.7 A 1.6 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74488 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415EN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 0.8 TJ = 150 °C ID = 250 µA 10 V GS(th) Variance (V) I S - Source Current (A) 0.6 TJ = 25 °C 0.4 0.2 0.0 - 0.2 1 0.0 0.2 0.4 0.6 0.8 1.0 - 0.4 - 50 1.2 - 25 0 VSD - Source-to-Drain Voltage (V) 50 75 100 125 150 Threshold Voltage 50 0.20 40 0.16 30 0.12 20 0.08 R DS(on) - Power (W) Source Drain Diode Forward Voltage 10 0 0.01 25 TJ - Temperature (°C) ID = 5.7 A 0.04 0.00 0.1 1 10 100 600 0 2 4 6 8 10 Time (s) VGS - Gate-to-Source Voltage (V) Single Pulse Power, Junction-to-Ambient S13-1462 Rev. E, 01-Jul-13 On-Resistance vs. Gate-to-Source Voltage Document Number: 74488 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415EN www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 4. Surface Mounted 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74488. S13-1462 Rev. E, 01-Jul-13 Document Number: 74488 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000