WILLAS FM120-M+ 2SA1036KxLT1 THRU Medium Power Transistor (32V, 0.5A) FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. Features surge capability. • High 1) Large for IC. overvoltage protection. • Guardring CMax. = 500mA I • Ultra high-speed switching. 2) Low VCE(sat).planar Ideal chip, for low-voltage epitaxial metal silicon junction. • Silicon operation. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 3 0.071(1.8) 0.056(1.4) MIL-STD-19500 3) We declare/228 that the material of product product for packing coderequirements. suffix "G" • RoHS compliance with RoHS 1 Halogen free product for packing code suffix "H" Pb-Free package is available Mechanical data RoHS product for packing code suffix ”G” : UL94-V0 flame • EpoxyHalogen freerated product forretardant packing code suffix “H” 2 SOT-23 Level 1 : Molded Sensitivity plastic, SOD-123H • Case Moisture , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Structure • Polarity : Indicated by cathode band Epitaxial planar type Position : Any • Mounting PNP silicon transistor • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 3 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings atFDEVICE 25℃ ambient temperature unless otherwise specified. MARKING Single phase half wave, 60Hz, resistive of inductive load. 1) load, 2SA1036KQLT1 For capacitive derate current=HQ by 20% 2) 2SA1036KRLT1 RATINGS =HR 2 PNP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 FAbsolute maximum ratings (Ta = 25_C) IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.50 0.85 0.9 0.92 0.5 IR @T A=125℃ 0.70 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. ORDERING INFORMATION 2- Thermal Resistance From Junction to Ambient Device 2SA1036Kx LT1G 2012-06 2012- Package SOT-23 Shipping 3000/Tape & Reel WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1036KxLT1 THRU Medium Power Transistor (32V, 0.5A) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FElectrical characteristics (Ta = 25_C) optimize board space. Low power loss, high efficiency. •Parameter Symbol Min. Typ. High current capability, low forward voltage drop. • Collector-base breakdown voltage BVCBO — 40 — • High surge capability. Collector-emitter breakdown voltage BVCEO — 32 — • Guardring for overvoltage protection. Emitter-base BVEBO —5 — high-speedvoltage switching. • Ultra breakdown epitaxial planar chip, metal • Silicon Collector cutoff current ICBOsilicon junction. — — • Lead-free parts meet environmental standards of Max. Unit — V — for packing "G" • RoHS product Collector-emitter saturation voltagecode suffix VCE(sat) — Halogen free product for packing code suffix "H" DC current transfer ration hFE 120 — — — — Emitter MIL-STD-19500 cutoff current /228 IEBO Mechanical data 0.012(0.3) Typ. IC= — 100µA — V Ic= — 1mA — V IE= — 100µA —1 µA VCB= — 20v —1 µA VEB= — 4V — 0.4 V IC/IB= — 100mA/ — 10mA 390 — VCE= — 3V,Ic= — 10mA 200 — MHZ 7 — pF — Transition frequence fT • Epoxy : UL94-V0 rated flame retardant Output capacitance Cob • Case : Molded plastic, SOD-123H Conditions 0.146(3.7) 0.130(3.3) • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 0.040(1.0) VCE= — 5V,IE=20mA,f=100MHz VCB= — 10V,IE=0A,f=1MHz 0.031(0.8) Typ. , 0.024(0.6) 0.031(0.8) Typ. hFE values are classified as follows. Method 2026 Item Q R band • Polarity : Indicated by cathode Dimensions in inches and (millimeters) Hfe Position : Any 180~390 • Mounting120~270 • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1036KxLT1 THRU (32V, 0.5A) Medium Power FM1200-M+ 1.0A SURFACE MOUNT Transistor SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features Electrical characteristic curves power dissipation offers design, excellent • Batch process better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1036KxLT1 THRU Medium Power Transistor (32V, 0.5A) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-23 to • Low profile surface mounted application in order optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .122(3.10) 0.146(3.7) 0.130(3.3) .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .106(2.70) Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .080(2.04) .070(1.78) RATINGS .083(2.10) 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave .004(0.10)MAX. superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 1.0 30 40 120 -55 to +125 .055(1.40) .035(0.89) 0.012(0.3) Typ. A A ℃ -55 to +150 - 65 to +175 .020(0.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U .012(0.30) V 0.9 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ 0.5 IR 10 Rated DC Blocking Voltage @T A=125℃ NOTES: Dimensions in inches and (millimeters) m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1036KxLT1 THRU (32V, 0.5A) Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) forward voltage drop. • High current capability, (2) low (1) Tape&Reel: 3 Kpcs/Reel surge capability.LT1 G ‐WS • High2SA1036K x Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon (2) CLASSIFICATION OF h RANK epitaxial planar chip,FE metal silicon junction. Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.