3STL2540 Low voltage high performance PNP power transistor Datasheet — production data Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Small, thin, leadless SMD plastic package with excellent thermal behavior 3 Applications ■ Power management ■ DC-DC converters 2 1 2 1 PowerFLAT™ 2 x 2 3L Description This device is an PNP transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging 3STL2540 L2540 PowerFLAT™ 2 x 2 Tape and reel May 2012 This is information on a product in full production. Doc ID 022059 Rev 2 1/11 www.st.com 11 Absolute maximum ratings 1 3STL2540 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -40 V VCEO Collector-emitter voltage (IB = 0) -40 V VEBO Emitter-base voltage -6 V Collector current -5 A Collector peak current (tP < 5 ms) -10 A Base current -0.5 A IC ICM IB (IC = 0) IBM Base peak current (tP < 5 ms) -1 A PTOT(1) Total dissipation at TA = 25 °C 1.2 W -65 to 150 °C 150 °C Value Unit TSTG TJ Storage temperature Max. operating junction temperature 1. Device mounted on a PCB area of 1 cm² Table 3. Symbol Thermal data Parameter RthJA(1) Thermal resistance junction-ambient max 104 °C/W RthJA(2) Thermal resistance junction-ambient max 75 °C/W Thermal resistance junction-case max 45 °C/W RthJC 1. Device mounted on a PCB area of 1 cm² 2. Device mounted on a PCB area of 6 cm² 2/11 Doc ID 022059 Rev 2 3STL2540 2 Electrical characteristics Electrical characteristics TJ = 25 °C; unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = - 40 V -100 nA IEBO Emitter cut-off current (IC = 0) VEB = - 6 V -100 nA VBE(on) Base-emitter on voltage VCE = - 2 V VCE(sat) Collector-emitter saturation voltage VBE(sat) (1) (1) hFE (1) IC = - 100 mA -670 IC = - 1 A IC = - 2 A IC = - 5 A IB = - 10 mA IB = - 100 mA _ IB = - 250 mA -150 -300 mV Base-emitter saturation voltage IC = - 1 A _ IB = - 10 mA 800 mV DC current gain VCE = - 2 V VCE = - 2 V VCE = - 2 V IC = - 0.5 A IC = - 2 A IC = - 5 A 280 210 100 VCE = -0.2 ÷ - 2 V IC = - 1 A Tj = -30 °C ÷ 150 °C td tr ts tf Resistive load Delay time Rise time Storage time Fall time IC = - 2 A VCC = - 10 V VBE(off) = 5 V, - IB(on) = IB(off) = 200 mA fT Transition frequency IC = - 0.1 A __ VCE = - 10 V mV -200 100 900 25 ns 140 ns 290 ns 60 ns 130 MHz 1. Pulse test: pulse duration ≤300 µs, duty cycle ≤2 %. Doc ID 022059 Rev 2 3/11 Electrical characteristics 2.1 3STL2540 Electrical characteristics (curves) Figure 2. DC current gain (VCE=-2 V) Figure 3. H &% DC current gain (VCE=-5 V) H&% 4* # 4* # 4* # 4* # 4* # 4* # Figure 4. )C! !-V Collector-emitter saturation voltage (VCEsat @ hFE=20) Figure 5. 6CESAT 6 )C! !-V Collector-emitter saturation voltage (VCEsat @ hFE=100) 6CESAT 6 4* # 4* # 4* # 4* # 4* # 4* # )C! !-V Figure 6. Base-emitter saturation voltage (Vbe(sat) @ hFE=20) !-V Figure 7. Base-emitter saturation voltage (Vbe(sat) @ hFE=100) 6BESAT 6 6BESAT 6 4* # 4* # 4* # 4* # 4* # )C! !-V 4/11 4* # )C! Doc ID 022059 Rev 2 )C! !-V 3STL2540 Electrical characteristics Figure 8. Resistive load switching times Figure 9. TNS Capacitance curves (f=1 MHz) #P& TS #BE TR TF #BC TD 6## 6 6"%OFF 6 H &% )# ! !-V Doc ID 022059 Rev 2 62 6 !-V 5/11 Package mechanical data 3 3STL2540 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 6/11 Doc ID 022059 Rev 2 3STL2540 Package mechanical data Table 5. PowerFLAT™ 2 x 2 3L mechanical data mm. Dim. Min. Typ. Max. A 0.55 0.60 0.65 A1 0.00 0.02 0.05 A3 0.10 b 0.25 0.30 0.35 D 1.90 2.00 2.10 E 1.90 2.00 2.10 e 1.20 1.30 1.40 D2 0.95 1.05 1.15 E2 1.40 1.50 1.60 H 0.20 0.25 0.30 K 0.20 0.30 0.40 L 0.35 0.40 0.45 R 0.15 Doc ID 022059 Rev 2 7/11 Package mechanical data 3STL2540 Figure 10. PowerFLAT™ 2 x 2 3L drawing BOTTOM VIEW H e E2 b L R D2 K TOP VIEW A D (A3) E LASER MARK PIN#1 ID A1 8329590_REV_B 8/11 Doc ID 022059 Rev 2 3STL2540 Packaging mechanical data Figure 11. PowerFLAT™ 2 x 2 3L footprint (dimension in mm.) 4 Packaging mechanical data ?2%6?" Doc ID 022059 Rev 2 9/11 Revision history 5 3STL2540 Revision history Table 6. 10/11 Document revision history Date Revision Changes 07-Dec-2011 1 Initial release 22-May-2012 2 Document status promoted from preliminary data to production data Doc ID 022059 Rev 2 3STL2540 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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