WILLAS FM120-M+ MMBT3906DW1T1 THRU Dual Bias Resistor Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. High capability, lowdevice forward is voltage drop. of our popular •The Mcurrent MBT3906DW1T1 a spin–off High surge capability. • SOT–23/SOT–323 three–leaded device. It is designed for general for overvoltage protection. • Guardring purpose amplifier applications and is housed in the SOT–363 Ultra high-speed switching. • six–leaded surface mount package. By putting two discrete devices in • Silicon epitaxial planar chip, metal silicon junction. one package, this device is ideal for low–power surface mount • Lead-free parts meet environmental standards of applications where board MIL-STD-19500 /228 space is at a premium. • RoHS product for packing code suffix "G" • hHalogen FE, 100–300 free product for packing code suffix "H" • Mechanical Low VCE(sat), ≤ 0.4 V data Circuit Design • •Simplifies Epoxy : UL94-V0 rated flame retardant • •Reduces Board Space Case : Molded plastic, SOD-123H , Component Count • •Reduces Terminals :Plated terminals, solderable per MIL-STD-750 • Available inMethod 8 mm, 2026 7–inch/3,000 Unit Tape and Reel • •Device MMBT3906DW1T1 = A2 PolarityMarking: : Indicated by cathode band :0.005g • •Weight Mounting Position : Any 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 6 1 2 5 0.071(1.8) 40.056(1.4) 3 SOT-363 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. (3) (2) (1) Dimensions in inches and (millimeters) Q1 Featrues • Weight : Approximated 0.011 gram z RoHS product for packing code suffix "G", Q2 HalogenMAXIMUM free productRATINGS for packing AND code suffix "H". ELECTRICAL CHARACTERISTICS Moisture Sensitivity Level 1 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% MAXIMUM RATINGS RATINGS Marking Code Rating Collector–Emitter Maximum Recurrent PeakVoltage Reverse Voltage Collector–Base Maximum RMS VoltageVoltage VCEO VRRM VCBO VRMS Maximum DC Blocking Voltage Emitter–Base Voltage VEBO VDC Unit 13 30Vdc 14 40 15 50 –40 14 21Vdc 28 35 20 –5.0 30Vdc 40 IC CJ Operating Temperature Range TJ Storage Temperature Range THERMAL CHARACTERISTICS (1) Total Package Dissipation Maximum Forward Voltage at 1.0A DC TA = 25°C V 10 100 115 150 120 200 V 105 Shipping 150 140 V 200 3000 Units/Reel V ORDERING INFORMATION 50 MMBT3906DW1T1 1.0 30 56 70 Marking100 80 40 120 -55 to +125 A2 A A ℃ -55 to +150 - 65 to +175 Symbol Max Unit PD 150 mW 0.50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Average Reverse Current at @T A=25℃ Ambient NOTES: (6) 18 80 42 Device 60 TSTG Resistance RJA Rated Thermal DC Blocking Voltage Junction to @T A=125℃ mAdc 16 60 RΘJA Typical Junction Capacitance (Note 1) CHARACTERISTICS Junction and Storage TJ, Tstg 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Temperature Range Value 12 –40 20 IO –200 Electrostatic ESD HBM>16000, Peak Forward Surge Discharge Current 8.3 ms single half sine-wave IFSM MM>2000 superimposed on rated load (JEDEC method) Maximum Average Forward Rectified Current Collector Current – Continuous Characteristic (5) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Symbol Typical Thermal Resistance (Note 2) (4) IR 833 °C/W –55 to +150 °C 0.70 0.85 0.9 0.92 0.5 10 V m 2- Thermal Resistance From Junction to Ambient 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3906DW1T1 THRU Dual Bias Resistor Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) • Batch process design, excellent power dissipation offers Symbol better reverse leakage current and thermal resistance. Characteristic Min Max SOD-123H • Low profile surface mounted application in order to Unit OFF CHARACTERISTICS optimize board space. (2) loss, highVoltage efficiency. • Low power Collector–Emitter Breakdown • High current capability, low forward voltage drop. Collector–Base Breakdown Voltage • High surge capability. Emitter–Base Breakdown Voltage protection. for overvoltage • Guardring high-speed switching. • UltraCurrent Base Cutoff • Silicon epitaxial planar chip, metal silicon junction. Collector Cutoff Current • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ON CHARACTERISTICS (2) • RoHS product for packing code suffix "G" DC Current Gain Halogen free product for packing code suffix "H" (IC = –0.1 mAdc, VCE = –1.0 Vdc) Mechanical (IC = –1.0 mAdc, VCE = data –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 : UL94-V0 ratedVdc) flame retardant • Epoxy (IC = –50 mAdc, VCE = –1.0 Vdc) : Molded • Case (IC = –100 mAdc, VCEplastic, = –1.0 SOD-123H Vdc) , • Terminals :Plated terminals, solderable per MIL-STD-750 Collector–Emitter Saturation Voltage 2026 (IC = –10 mAdc, IMethod B = –1.0 mAdc) (IC = –50 mAdc, I = –5.0 mAdc) • Polarity : Indicated by cathode band B V(BR)CEO 0.146(3.7) –40 – V(BR)CBO –40 V(BR)EBO –5.0 – IBL – –50 ICEX – –50 60 80 100 60 30 – – 300 – – 0.130(3.3) hFE 0.031(0.8) Typ. Vdc 0.012(0.3) Typ. – Vdc Vdc 0.071(1.8) 0.056(1.4) nAdc nAdc – 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. VCE(sat) – –0.25 – –0.4 Dimensions in inches and (millimeters) Base–Emitter Saturation Voltage Position : Any • Mounting (IC = –10 mAdc, IB = –1.0 mAdc) • Weight : Approximated 0.011 gram (IC = –50 mAdc, IB = –5.0 mAdc) VBE(sat) Vdc Vdc –0.65 – –0.85 –0.95 fT 250 – MHz Cobo – 4.5 pF Cibo – 10.0 pF SMALL–SIGNAL CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃– ambient temperature Current–Gain Bandwidth Product unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Output Capacitance For capacitive load, derate current by 20% Input Capacitance RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤2.0%. Marking Code 12 13 14 20 30 40 VRRM otherwise noted) ELECTRICAL CHARACTERISTICS (TA = 25°CVunless 14 21 (Continued) 28 Maximum RMS Voltage RMS Characteristic Maximum DC Blocking Voltage 20 30 40 VDC Maximum Recurrent Peak Reverse Voltage Input Impedance Maximum Average Forward Rectified Current (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) IFSM Typical Thermal Resistance (Note 2) RΘJA Voltage Feedback Ratio superimposed on rated load (JEDEC method) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain Typical Junction Capacitance (Note 1) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Operating Temperature Range OutputTemperature Admittance Range Storage (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) Noise Figure CHARACTERISTICS CJ TJ Delay Time 10 100 115 150 120 200 35 42 Symbol 50 60 56 Min 80 70 Max 100 105 Unit 150 140 hre 1.02.0 300.1 hfe 40 100 120 -55 to +125 hoe - 65 to 3.0 +175 @T A=125℃ 0.50 0.70 IR td (IC = –10 mAdc, IB1 = –1.0 mAdc) 10 X 10–4 400 – 200 -55 to +150 60 mhos 0.85 0.9 0.92 Storage Time Fall Time 10 35 tr – 35 (VCC = –3.0 Vdc, IC = –10 mAdc) ts – 225 (IB1 = IB2 = –1.0 mAdc) tf – 75 2- Thermal Resistance From Junction to Ambient 2012-06 kΩ – 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-0 12 0.5 (VCC = –3.0 Vdc, VBE = 0.5 Vdc) NOTES: Rise Time 18 80 NF FM160-MH –FM180-MH FM1100-MH 4.0 dB FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Maximum Average Reverse Current at @T A=25℃ SWITCHING CHARACTERISTICS Rated DC Blocking Voltage TSTG (VCE Forward = –5.0 Vdc, IC =at–100 Maximum Voltage 1.0A Adc, DC RS = 1.0 k Ω, f =VF1.0 kHz) 16 60 hie IO Peak Forward Surge Current 8.3 ms single half sine-wave 15 50 ns ns WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3906DW1T1 THRU Dual Bias Resistor Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline 3V Features +0.5 V 3V < 1 ns +9.1 V • Batch process design, excellent power dissipation offers better reverse leakage current and thermal 275resistance. SOD-123H optimize board space.10 k 10 k < 1 ns surface mounted application in order to • Low profile 0 • Low power loss, high efficiency. • High current capability, low forward voltageCsdrop. < 4 pF* 10.6 V• High surge capability. ns 10 < t1 < 500 s protection. • Guardring for300overvoltage 10.9 V t1 DUTY CYCLE = 2% • Ultra high-speed switching. DUTY CYCLE = 2% • Silicon epitaxial planar chip, metal silicon junction. * Total shunt capacitance of test jig and connectors standards of • Lead-free parts meet environmental MIL-STD-19500 /228 Figurefor1.packing Delay code and suffix Rise "G" Time • RoHS product 275 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Cs < 4 pF* 1N916 0.071(1.8) 0.056(1.4) Figure 2. Storage and Fall Time Equivalent Test Circuit Test Circuit Halogen freeEquivalent product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. TYPICAL TRANSIENT CHARACTERISTICS , • Terminals :Plated terminals, solderable per MIL-STD-750 TJ = 25°C TJ = 125°C Method 2026 CAPACITANCE (pF) 7.0 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 5.0 5000 MAXIMUMCRATINGS AND ELECTRICAL CHARACTERISTICS obo Ratings at 25℃ ambient temperature unless otherwise specified. ibo Single phase half wave, 60Hz, Cresistive of inductive load. 3.0 For capacitive load, derate current by 20% RATINGS 2.0 1000 700 500 300 200 13 30 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 1.0 0.1 2170 3050 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 VDC20 30 4020 Maximum Average Forward RectifiedBIAS Current IO REVERSE (VOLTS) Figure 3.single Capacitance Peak Forward Surge Current 8.3 ms half sine-wave IFSM Maximum DC Blocking Voltage Dimensions in inches and (millimeters) VCC = 40 V IC/IB = 10 3000 2000 Q, CHARGE (pC) 10 1.0 superimposed on rated load (JEDEC method) ICC/IJB = 10 TJ Storage Temperature Range TSTG TIME (ns) 100 CHARACTERISTICS 70 Maximum Forward Voltage at 1.0A DC 50 @T A=125℃ 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR 7 d @ VOB = 0 V 2- Thermal Resistance From Junction to tAmbient 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2012-06 2012-0 18 80 QA10 100 115 150 120 200 28 35 42 56 70 105 140 150 200 200 402.0 3.0 505.0 7.0 60 10 20 8030 50 100 70 100 1.0CURRENT (mA) IC, COLLECTOR Figure 4. Charge Data 30 -55300 to +125 200 40 120 VF V tr @ VCC = 3.0 NOTES: 16 60 VCC = 40 V -55 toI +150 B1 = IB2 - 65 to +175 IC/IB = 20 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ 30 Rated DC Blocking Voltage 20 15 50 500 t f , FALL TIME (ns) Typical Junction Capacitance (Note 1) 300 Operating Temperature Range 200 QT 14 40 RΘJA Typical 500 Thermal Resistance (Note 2) 0.031(0.8) Typ. 15 V 40 V 2.0 V 200 70 50 0.50 0.70 0.85 0.9 0.5 30 20 0.92 10 IC/IB = 10 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Fall Time 200 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3906DW1T1 THRU Dual Bias Resistor Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Features TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS Package outline NOISE FIGURE VARIATIONS dissipation • Batch process design, excellent (V power = –5.0 Vdc, T =offers 25°C, Bandwidth = 1.0 Hz) A better reverse leakage currentCE and thermal resistance. f = 1.0 kHz optimize board space. I = 1.0 mA C power loss, high efficiency. • Low SOURCE RESISTANCE = 200 voltage drop. capability, low forward • High current = 0.5 mA • High surgeICcapability. • Guardring for overvoltage protection. SOURCE RESISTANCE = 2.0 k • Ultra high-speed switching. IC = 50 A metal silicon junction. • Silicon epitaxial planar chip, • Lead-free parts meet environmental standards of 4.0 3.0 2.0 MIL-STD-19500 /228 RoHS product for packing •SOURCE RESISTANCE = 2.0 k code suffix "G" ICHalogen = 100 A free product for packing code suffix "H" 1.0 40 IC = 1.0 mA 10 0.012(0.3) Typ. 6 0.071(1.8) 0.056(1.4) 4 IC = 50 A 2 IC = 100 A 0 100 • Terminals :Plated Figure terminals, 7. solderable per MIL-STD-750 0.146(3.7) 0.130(3.3) IC = 0.5 mA 8 Mechanical data 0 : UL94-V0 0.2 0.4 1.0 rated 2.0 flame 4.0 retardant 10 20 0.1 • Epoxy FREQUENCY (kHz) SOD-123H • Case : Molded f,plastic, SOD-123H 12 profile surface =mounted application in order to • Low SOURCE RESISTANCE 200 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 0.1 0.2 0.040(1.0) 0.024(0.6) 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 0.031(0.8) Typ. , 100 0.031(0.8) Typ. Figure 8. Method 2026 • Polarity : Indicated by cathode band h PARAMETERS • Mounting Position : Any (VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C) • Weight : Approximated 0.011 gram 300 Dimensions in inches and (millimeters) hoe, OUTPUT ADMITTANCE ( mhos) 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 70 RATINGS 100 Code Marking Maximum Recurrent Peak Reverse Voltage 70 VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO 5.0 7.0 10 IFSM 50 30 0.1 0.2 Current 0.3 0.5 ms 1.0 half sine-wave 2.0 3.0 0.7single Peak Forward Surge 8.3 IC, COLLECTOR CURRENT (mA) superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note Figure 9.2)Current Gain Typical Junction Capacitance (Note 1) 20 Operating Temperature Range h ie , INPUT IMPEDANCE (k OHMS) Storage Temperature Range 10 7.0 5.0 CHARACTERISTICS CJ TJ TSTG VF 3.0 Maximum Average Reverse Current at @T A=25℃ 2.0 @T A=125℃ Rated DC Blocking Voltage IR 0.7 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.5 2- Thermal Resistance From Junction to Ambient 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 11. Input Impedance 2012-06 2012-0 20 13 30 14 40 21 10 30 7 28 40 0.1 0.2 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 0.3 0.5 0.7 1.0 2.0 3.0 30 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 40 Admittance Figure 10. Output 120 -55 10 to +125 -55 to +150 - 65 to +175 7.0 5.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 0.3 0.2 30 5 RΘJA NOTES: 1.0 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH hre , VOLTAGE FEEDBACK RATIO (x 10 -4) h fe , DC CURRENT GAIN Ratings at 25℃ ambient temperature unless otherwise specified. 200 phase half wave, 60Hz, resistive of inductive load. Single For capacitive load, derate current by 20% 5.0 7.0 10 3.0 0.50 0.70 0.9 0.85 0.92 0.5 10 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3906DW1T1 THRU Dual Bias Resistor Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features TYPICAL STATIC CHARACTERISTICS dissipation offers • Batch process design, excellent power better reverse leakage current and thermal resistance. h FE, DC CURRENT GAIN (NORMALIZED) 2.0 SOD-123H • Low profile surface mounted application in order to TJ = +125°C optimize board space. 0.3 • Low power loss, high efficiency. +25°C • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. -55°C • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.2 • RoHS product for packing code suffix "G" 1.0 0.7 0.5 VCE = 1.0 V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" Mechanical data 0.1 flame • Epoxy : UL94-V0 0.1 0.2 0.3 rated0.5 0.7retardant 1.0 • Case : Molded plastic, SOD-123H • 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 0.031(0.8) Typ. , Terminals :Plated terminals, solderable per MIL-STD-750 Figure 13. DC Current Gain 30 70 50 0.040(1.0) 0.024(0.6) 100 200 0.031(0.8) Typ. Method 2026 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) • Polarity : Indicated by cathode band 1.0 • Mounting Position : Any • Weight : Approximated 0.011 gram 0.8 IC = 1.0 mA Dimensions in inches and (millimeters) TJ = 25°C 10 mA 30 mA 0.6 at 25℃ ambient temperature unless otherwise specified. Ratings Single phase half wave, 60Hz, resistive of inductive load. For 0.4 capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 Maximum RMS Voltage VRMS 14 21 28 0.2 0 Maximum Voltage 0.01DC Blocking 0.02 0.03 0.05 0.07 0.1 VDC 15 50 16 60 18 80 42 56 602.0 80 3.0 35 0.220 0.3 30 0.5 400.7 IB, BASE CURRENT (mA) 50 1.0 IO Figure 14. Collector Saturation Region Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Maximum Average Forward Rectified Current 100 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS J Storage Temperature Range VBE(sat) @ IC/IB = 10 TJ TSTG 0.8 V, VOLTAGE (VOLTS) CHARACTERISTICS VBE @ VCE = 1.0 V Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.4 @T A=125℃ IR NOTES: IC/IBVDC. = 10 CE(sat) @ 1- Measured at 1 MHZ and applied reverseVvoltage of 4.0 0.2 2- Thermal Resistance From Junction to Ambient 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 15. “ON” Voltages 2012-06 2012-0 0.5 120 200 70 105 140 150 10 200 100 7.0 5.0 -55 to +150 VC FOR VCE(sat) - 65 to +175 +25°C TO +125°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum 0.6 Forward Voltage at 1.0A DC 1.0 -55 to +125 V , TEMPERATURE COEFFICIENTS (mV/ °C) Operating Temperature Range T = 25°C 40 120 CJ Typical Junction Capacitance (Note 1) 1.0 RΘJA 115 150 1.0 30 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 10 100 100 200 0 0.50 0.70 0.5 -0.5 10 -1.0 0.92 +25°C TO +125°C -55°C TO +25°C VB FOR VBE(sat) -1.5 -2.0 0.9 0.85 -55°C TO +25°C 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 16. Temperature Coefficients WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3906DW1T1 THRU Dual Bias Resistor Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-363 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .087(2.20) • Ultra high-speed switching. .071(1.80) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.031(0.8) Typ. .030(0.75) .021(0.55) .071(1.80) • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .010(0.25) .003(0.08) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any .056(1.40) • Weight : Approximated 0.011 gram .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM Maximum Recurrent Peak Reverse Voltage .016(0.40) VRMS .004(0.10) Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 12 20 14 20 13 30 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 14 40 15 50 Typical Junction Capacitance (Note 1) Storage Temperature Range 10 100 115 150 120 200 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 IO IFSM TJ Operating Temperature Range 18 80 21 1.0 30 Dimensions RΘJAin inches and (millimeters) CJ Typical Thermal Resistance (Note 2) 16 60 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3906DW1T1 THRU Dual Bias Resistor Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features FM1200-M+ Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) voltage drop. • High current capability, low forward (1) MMBT3906DW1T1 G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumof WILLAS. Customers using or selling WILLAS components for use in Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR m such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.