UT54ACS132

Standard Products
UT54ACS132/UT54ACTS132
Quadruple 2-Input NAND Schmitt Triggers
Datasheet
November 2010
www.aeroflex.com/logic
FEATURES
‰ 1.2μ CMOS (ACTS 132) and 0.6μ CRH CMOS process
(ACS132)
- Latchup immune
‰ High speed
‰ Low power consumption
‰ Single 5 volt supply
‰ Available QML Q or V processes
‰ Flexible package
- 14-pin DIP (not available for the ACS132)
- 14-lead flatpack
‰ UT54ACS132 - SMD 5962-96542
‰ UT54ACTS132 - SMD 5962-96543
PINOUTS
14-Pin DIP
Top View
A1
1
14
VDD
B1
2
13
B4
Y1
3
12
A4
A2
B2
4
11
5
10
Y4
B3
Y2
VSS
6
9
7
8
14-Lead Flatpack
Top View
DESCRIPTION
The UT54ACS132 and the UT54ACTS132 are 2-input NAND
gates with Schmitt Trigger input levels. A high applied on both
the inputs forces the output to a low state.
A1
B1
Y1
The devices are characterized over full military temperature
range of -55°C to +125°C.
A2
B2
FUNCTION TABLE
Y2
INPUTS
VSS
OUTPUT
An
Bn
Yn
L
L
H
L
H
H
H
L
H
H
H
L
A1
B1
B2
LOGIC SYMBOL
A1
B1
A2
B2
A3
B3
A4
B4
(2)
(9)
&
(3)
(6)
(8)
(10)
(12)
(13)
14
2
13
3
12
4
11
5
10
Y4
B3
6
9
A3
7
8
VDD
B4
A4
Y3
Y1
Y2
A3
B3
Y1
(11)
Y3
A4
(4)
(5)
1
LOGIC DIAGRAM
A2
(1)
A3
Y3
B4
Y2
Y3
Y4
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984
and IEC Publication 617-12.
1
Y4
OPERATIONAL ENVIRONMENT1
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6 (ACTS132)
5.0E5 (ACS132)
rads(Si)
SEU Threshold 2
80
MeV-cm2/mg
SEL Threshold
120
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-.3 to VDD +.3
V
TSTG
Storage Temperature range
-65 to +150
°C
TJ
Maximum junction temperature
+175
°C
TLS
Lead temperature (soldering 5 seconds)
+300
°C
ΘJC
Thermal resistance junction to case
20
°C/W
II
DC input current
±10
mA
PD
Maximum power dissipation
1
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
4.5 to 5.5
V
VIN
Input voltage any pin
0 to VDD
V
TC
Temperature range
-55 to + 125
°C
2
DC ELECTRICAL CHARACTERISTICS 7
(VDD = 5.0V ±10%; VSS = 0V 6, -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
PARAMETER
VT +
Schmitt Trigger, positive going 1 threshold
ACTS
ACS
VT-
Schmitt Trigger, negative going 1 threshold
ACTS
ACS
VH
Schmitt Trigger, typical range of hysteresis
CONDITION
Input leakage current
ACTS/ACS
VIN = VDD or VSS
1
μA
0.40
0.25
V
High-level output voltage 3
ACTS
ACS
IOH = -8.0mA
IOH = -100μA
.7VDD
VDD - 0.25
IOS
Short-circuit output current 2 ,4
ACTS/ACS
VO = VDD and VSS
-200
IOL
Output current10
VIN = VDD or VSS
(Sink)
VOL = 0.4V
Output current10
VIN = VDD or VSS
(Source)
VOH = VDD - 0.4V
Quiescent Supply Current
ΔIDDQ
Quiescent Supply Current Delta
ACTS
V
-1
VOH
IDDQ
V
0.9
1.5
IOL = 8.0mA
IOL = 100μA
Power dissipation 2, 8, 9
2.25
.7VDD
0.3
0.6
Low-level output voltage 3
ACTS
ACS
Ptotal
UNIT
V
2
VOL
IOH
MAX
0.5
.3VDD
ACTS
ACS
IIN
MIN
V
200
mA
8
mA
-8
mA
CL = 50pF
1.9
mW/
MHz
VDD = 5.5V
10
μA
3.1
mA
For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
CIN
COUT
Input capacitance 5
ƒ = 1MHz @ 0V
15
pF
Output capacitance 5
ƒ = 1MHz @ 0V
15
pF
3
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%, 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density ≤ 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All ACTS specifications are valid for radiation dose <1E6 rads(Si), and all ACS specifications are valid for radiation dose <5E5 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
4
AC ELECTRICAL CHARACTERISTICS 2
(VDD = 5.0V ±10%; VSS = 0V 1, -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
tPHL
Input to Yn
2
15
ns
tPLH
Input to Yn
2
12
ns
Notes:
1. Maximum allowable relative shift equals 50mV.
2. For the ACTS version, all specifications are valid for radiation dose <1E6 rads(Si). For the ACS version, all specifications are valid for radiation dose <5E5 rads(Si).
5
PACKAGING
Side-Brazed Packages
6
FLATPACK PACKAGES
7
UT54ACS132/UT54ACTS132: SMD
5962 * ***** ** * * *
Lead Finish: (Notes 1 & 2)
A = Solder
C = Gold
X = Optional
Package Type:
X = 14-lead ceramic bottom-brazed dual-in-line Flatpack
C = 14-lead ceramic side-brazed dip
Class Designator:
Q = QML Class Q
V = QML Class V
Device Type:
01
Drawing Number:
96542 = UT54ACS132
96543 = UT54ACTS132
Total Dose: (Notes 3 & 4)
R = 1E5 rads(Si)
F = 3E5 rads(Si)
G = 5E5 rads(Si)
H = 1E6 rads(Si)
Notes:
1. Lead finish (A,C, or X) must be specified.
2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. For prototype inquiries, contact factory.
4. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(Si) or 1E6 rads(Si) and is tested in accordance with MIL-STD-883 Test Method 1019
Condition A and section 3.11.2. Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(Si), 3E5 rads(Si), and 5E5 rads(Si), and is tested in
accordance with MIL-STD-883 Test Method 1019 Condition A.
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Aeroflex Colorado Springs - Datasheet Definition
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Preliminary Datasheet - Shipping Prototype
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reserves the right to make changes to any products and
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