UT54ACS157

Standard Products
UT54ACS157/UT54ACTS157
Quadruple 2 to 1 Multiplexers
Datasheet
November 2010
www.aeroflex.com/logic
PINOUTS
FEATURES
‰ 1.2μ CMOS
- Latchup immune
‰ High speed
‰ Low power consumption
‰ Single 5 volt supply
‰ Available QML Q or V processes
‰ Flexible package
- 16-pin DIP
- 16-lead flatpack
‰ UT54ACS157 - SMD 5962-96552
‰ UT54ACTS157 - SMD 5962-96553
16-Pin DIP
Top View
DESCRIPTION
The UT54ACS157 and the UT54ACTS157 are monolithic data
selectors/multiplexers. A 4-bit word is selected from one of two
sources and is routed to the four outputs. A separate strobe
input, G, is provided.
FUNCTION TABLE
OUTPUT
STROBE
G
SELECT
A/B
A
B
Y
H
X
X
X
L
L
L
L
X
L
L
L
H
X
H
L
H
X
L
L
L
H
X
H
H
1
16
VDD
A1
2
15
G
B1
3
14
A4
Y1
4
13
B4
A2
5
12
Y4
B2
6
11
A3
Y2
7
10
B3
VSS
8
9
Y3
16-Lead Flatpack
Top View
The devices are characterized over full military temperature
range of -55°C to +125°C.
INPUTS
A/B
DATA
A/B
1
16
VDD
A1
2
15
G
B1
3
14
A4
Y1
4
13
B4
A2
5
12
Y4
B2
6
11
A3
Y2
VSS
7
8
10
9
B3
Y3
LOGIC SYMBOL
(15)
G
(1)
A/B
A1
(2)
(3)
B1
(5)
A2
(6)
B2
(11)
A3
(10)
B3
(14)
A4
(13)
B4
EN
G1
1
1
MUX
(4)
(7)
(9)
(12)
Y1
Y2
Y3
Y4
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and
IEC Publication 617-12.
1
LOGIC DIAGRAM
1A
(2)
(4)
1B
2A
(3)
(5)
(7)
2B
(6)
3A
(11)
3B
(10)
(9)
4A
STROBE G
SELECT A/B
2Y
3Y
(14)
(12)
4B
1Y
(13)
(15)
(1)
2
4Y
OPERATIONAL ENVIRONMENT1
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6
rads(Si)
SEU Threshold 2
80
MeV-cm2/mg
SEL Threshold
120
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-.3 to VDD +.3
V
TSTG
Storage Temperature range
-65 to +150
°C
TJ
Maximum junction temperature
+175
°C
TLS
Lead temperature (soldering 5 seconds)
+300
°C
ΘJC
Thermal resistance junction to case
20
°C/W
II
DC input current
±10
mA
PD
Maximum power dissipation
1
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
4.5 to 5.5
V
VIN
Input voltage any pin
0 to VDD
V
TC
Temperature range
-55 to + 125
°C
3
DC ELECTRICAL CHARACTERISTICS 7
(VDD = 5.0V ±10%; VSS = 0V 6, -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
VIL
VIH
IIN
PARAMETER
CONDITION
MIN
Low-level input voltage 1
ACTS
ACS
High-level input voltage 1
ACTS
ACS
MAX
UNIT
0.8
.3VDD
V
.5VDD
.7VDD
V
Input leakage current
ACTS/ACS
VIN = VDD or VSS
Low-level output voltage 3
ACTS
ACS
IOL = 8.0mA
IOL = 100μA
High-level output voltage 3
ACTS
ACS
IOH = -8.0mA
IOH = -100μA
Short-circuit output current 2 ,4
ACTS/ACS
VO = VDD and VSS
-200
Output current10
VIN = VDD or VSS
8
mA
(Sink)
VOL = 0.4V
Output current10
VIN = VDD or VSS
-8
mA
(Source)
VOH = VDD - 0.4V
Ptotal
Power dissipation 2, 8, 9
CL = 50pF
1.9
mW/
MHz
IDDQ
Quiescent Supply Current
VDD = 5.5V
10
μA
Quiescent Supply Current Delta
For input under test
1.6
mA
VOL
VOH
IOS
IOL
IOH
ΔIDDQ
ACTS
-1
1
μA
0.40
0.25
V
.7VDD
VDD - 0.25
V
200
mA
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
CIN
COUT
Input capacitance 5
ƒ = 1MHz @ 0V
15
pF
Output capacitance 5
ƒ = 1MHz @ 0V
15
pF
4
Notes:
1.Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%, 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltag within the above specified range, but are
guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density ≤ 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose ≤ 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
5
AC ELECTRICAL CHARACTERISTICS 2
(VDD = 5.0V ±10%; VSS = 0V 1, -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
tPHL
Data to output Yn
2
15
ns
tPLH
Data to output Yn
2
13
ns
tPHL
Strobe to output Yn
2
15
ns
tPLH
Strobe to output Yn
2
12
ns
tPHL
Select to output Yn
2
16
ns
tPLH
Select to output Yn
2
14
ns
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose ≤ 1E6 rads(Si).
6
PACKAGING
Side-Brazed Packages
7
FLATPACK PACKAGES
8
UT54ACS157/UT54ACTS157: SMD
5962 * ***** ** * * *
Lead Finish: (Notes 1 & 2)
A = Solder
C = Gold
X = Optional
Package Type:
X = 16-lead ceramic bottom-brazed dual-in-line Flatpack
C = 16-lead ceramic side-brazed dip
Class Designator:
Q = QML Class Q
V = QML Class V
Device Type:
01
Drawing Number:
96552 = UT54ACS157
96553 = UT54ACTS157
Total Dose: (Notes 3 & 4)
R = 1E5 rads(Si)
F = 3E5 rads(Si)
G = 5E5 rads(Si)
H = 1E6 rads(Si)
Notes:
1. Lead finish (A,C, or X) must be specified.
2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. For prototype inquiries, contact factory.
4. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(Si) or 1E6 rads(Si) and is tested in accordance with MIL-STD-883 Test Method 1019
Condition A and section 3.11.2. Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(Si), 3E5 rads(Si), and 5E5 rads(Si), and is tested in
accordance with MIL-STD-883 Test Method 1019 Condition A.
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reserves the right to make changes to any products and
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