MSF6N90

MSF6N90
900V N-Channel MOSFET
Description
The MS15N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The ITO-220
package is universally preferred for all
commercial-industrial applications
Features
• RDS(on) (Max 2.4 Ω )@VGS=10V
• Gate Charge (Typical 33nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150˚C)
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
6
A
Drain Current -Continuous (TC=100°C)
3.8
A
IDM
Drain Current Pulsed
24
A
EAS
Single Pulsed Avalanche Energy
650
mJ
EAR
Repetitive Avalanche Energy
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
ID
Publication Order Number: [MSF6N90]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N90
900V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
PD
TJ,TSTG
TL
Total Power Dissipation (TC = 25 °C)
Derating Factor above 25 °C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Value
Unit
56
W
0.48
W/°C
-55 to +150
°C
300
°C
• Drain current limited by maximum junction temperature
Thermal characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Max.
RθJC
Junction-to-Case
2.25
RθJA
Junction-to-Ambient
62.5
°C/W
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
3.0
--
5.0
V
--
1.95
2.4
Ω
VGS
Gate Threshold Voltage
VDS=VGS,ID=250μA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,ID=3A
Off Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
△BVDSS
Breakdown Voltage
/△TJ
Temperature Coefficient
IDSS
IGSSF
IGSSR
Test Conditions
Min
Typ.
Max.
Units
VGS=0 V , ID=250μA
900
--
--
V
--
1.03
--
V/°C
--
--
10
μA
VGS=30V , VDS=0 V
--
--
100
nA
VGS=-30V , VDS=0 V
--
--
-100
nA
Min
Typ.
Max.
Units
--
1500
2010
pF
--
145
190
pF
--
15
20
pF
ID=250μA, Referenced to 25°C
Zero Gate Voltage Drain
VDS=900V , VGS= 0 V
Current
VDS=720V , TC= 125°C
Gate-Body Leakage
Current, Forward
Gate-Body Leakage
Current, Reverse
Dynamic Characteristics
Symbol
Parameter
CISS
Units
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Publication Order Number: [MSF6N90]
VDS=25V, VGS=0V,
f=1.0MHz
100
© Bruckewell Technology Corporation Rev. A -2014
MSF6N90
900V N-Channel MOSFET
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
40
80
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDS=450 V, ID=6A,
--
120
240
ns
td(off)
Turn-Off Delay Time
RG=25Ω
--
60
120
ns
tf
Turn-Off Fall Time
--
70
140
ns
Qg
Total Gate Charge
--
33
45
nC
Qgs
Gate-Source Charge
--
10
--
nC
Qgd
Gate-Drain Charge
--
13
--
nC
Min
Typ.
Max.
Units
VDS=720V,ID=6A,
VGS=10 V
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source-Drain Diode Forward Current
--
--
6.0
ISM
ISM Pulsed Source-Drain Diode Forward Current
--
--
24.0
VSD
Source-Drain Diode Forward Voltage
IS=6A , VGS= 0V
--
--
1.4
V
trr
Reverse Recovery Time
IS=6A , VGS= 0V
--
780
--
ns
Qrr
Reverse Recovery Charge
diF/dt=100A/μs
--
9.0
--
μC
A
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=34mH, IAS=6A, VDD=50V, RG=25Ω, Starting TJ=25℃
3. ISD≦6A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSF6N90]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N90
900V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF6N90]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N90
900V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF6N90]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N90
900V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF6N90]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N90
900V N-Channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF6N90]
© Bruckewell Technology Corporation Rev. A -2014