Data Sheet, Rev.1.2, Sep 2008 BTS5242-2L Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5242-2L Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin Assignment BTS5242-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 4.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.2 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 10 10 11 13 14 6 6.1 6.2 6.3 6.4 6.5 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 16 16 16 17 7 7.1 7.2 7.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 19 20 21 8 Package Outlines BTS5242-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Data Sheet 2 Rev.1.2, 2008-09-01 Smart High-Side Power Switch PROFET 1 BTS5242-2L Overview Basic Features • • • • • • • • • Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behavior at under voltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Very low leakage current from OUT to GND Green Product (RoHS compliant) AEC Qualified PG-DSO-12-9 Product Summary The BTS5242-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Operating voltage Vbb(on) 4.5 .. 28 V Over voltage protection Vbb(AZ) 41 V On-State resistance RDS(ON) 25 mΩ Nominal load current (one channel active) 6A Current limitation repetitive IL(nom) IL(LIM) IL(SCr) Standby current for whole device with load Ibb(OFF) 7.5 µA Adjustable current limitation 7 A / 40 A 7 A / 40 A Type Package Marking BTS5242-2L PG-DSO-12-9 BTS5242-2L Data Sheet 3 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Overview Protective Functions • • • • • • • • • Reverse battery protection with external resistor Short circuit protection Overload protection Multi-step current limitation Adjustable current limitation Thermal shutdown with restart Over voltage protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD) Diagnostic Functions • • • • • • IntelliSense functionality for each channel Proportional load current sense signal by current source Open load detection in ON-state by load current sense Open load detection in OFF-state by voltage source Feedback on over temperature and current limitation in ON-state Suppressed thermal toggling of fault signal Applications • • • • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads All types of resistive, inductive and capacitive loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Data Sheet 4 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Block Diagram 2 Block Diagram The BTS5242-2L is a dual channel high-side power switch (two times 25 mΩ) in PG-DSO-12-9 power package providing embedded protective functions. Integrated resistors at each input pin (IN1, IN2, CLA) reduce external components. The load current limitation can be adjusted in two steps by the current limit adjust pin (CLA). The IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function, open load in off state and over load alert. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology. channel 1 VBB load current sense internal power supply logic IN1 IS1 ESD protection CLA gate control & charge pump open load detection temperature sensor clamp for inductive load multi step load current limitation OUT1 channel 2 IN2 IS2 control and protection circuit equivalent to channel 1 OUT2 GND Figure 1 Data Sheet Block Diagram 5 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Block Diagram 2.1 Terms Following figure shows all terms used in this data sheet. Vbb Ibb IIN1 IIN2 VIN1 VIN2 IIS1 IIS2 VIS1 VIS2 ICLA IN1 VBB IN2 IS1 OUT1 V DS1 VOUT1 BTS5242-2L OUT2 IS2 CLA I L1 I L2 V DS2 V OUT2 GND VCLA IGND Terms2ch.emf Figure 2 Data Sheet Terms 6 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS5242-2L (top view) GND 1 12 VBB IN1 2 11 OUT1 IS1 3 10 OUT1 IS2 4 9 OUT2 IN2 5 8 OUT2 VBB 6 7 CLA heat slug (VBB) Figure 3 Pin Configuration PG-DSO-12-9 3.2 Pin Definitions and Functions Pin Symbol I/O OD Function 2 IN1 I Input signal for channel 1 5 IN2 I Input signal for channel 2 3 IS1 O Diagnosis output signal channel 1 4 IS2 O Diagnosis output signal channel 2 7 CLA I Current limit adjust input for channel 1&2 OUT1 1) O Protected high-side power output channel 1 8, 9 OUT2 1) O Protected high-side power output channel 2 1 GND - Ground connection 6,12, heat slug VBB - Positive power supply for logic supply as well as output power supply 10,11 1) All output pins of each channel have to be connected Data Sheet 7 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Electrical Characteristics 4 Electrical Characteristics 4.1 Maximum Ratings Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. max. – – 18 28 Power Supply 4.1.1 4.1.2 4.1.3 Vbb Supply voltage IGND Supply voltage for full short circuit protection (single Vbb(SC) Current through ground pin V t ≤ 100 h mA t ≤ 2 min -150 0 28 V – 52 V pulse) (Tj = -40°C .. 150°C) 4.1.4 Voltage at power transistor 4.1.5 Supply Voltage for Load Dump protection VDS Vbb(LD) V – – 40 53 L = 8 µH R = 0.2 Ω 1) RI = 2 Ω 2) RL = 2.25 Ω RL = 6.8 Ω Power Stages 4.1.6 Load current IL 4.1.7 Maximum energy dissipation single pulse EAS IL(LIM) A – 130 mJ 3) 4) Tj(0) = 150°C IL(0) = 6 A Vbb = 12V 4.1.8 Power dissipation (DC) Ptot – 1.4 W 5) Ta = 85 °C Tj ≤ 150 °C Logic Pins VIN -5 -16 19 4.1.10 Current through input pin IIN -2.0 -8.0 2.0 mA 4.1.11 Voltage at current limit adjust pin VCLA -5 -16 19 V ICLA -2.0 -8.0 2.0 IIS -5 10 mA 4.1.14 Junction temperature Tj -40 150 °C 4.1.15 Dynamic temperature increase while switching ∆Tj – 60 °C 4.1.16 Storage temperature Tstg -55 150 °C 4.1.9 Voltage at input pin 4.1.12 Current through current limit adjust pin 4.1.13 Current through sense pin V t ≤ 2 min t ≤ 2 min t ≤ 2 min mA t ≤ 2 min Temperatures Data Sheet 8 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Electrical Characteristics Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. max. ESD Susceptibility 4.1.17 ESD susceptibility HBM kV VESD IN, CLA IS OUT -1 -2 -4 1 2 4 according to EIA/JESD 22-A 114B 1) R and L describe the complete circuit impedance including line, contact and generator impedances 2) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpeak); 0 < t < tpeak. Please see Figure 8 5) Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet 9 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Block Description and Electrical Characteristics 5 Block Description and Electrical Characteristics 5.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 5.1.1 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described in Section 6.2. Tj = 25°C 35 140 30 120 RDS(ON) /mΩ RDS(ON) /mΩ Vbb = 13.5 V 25 20 100 80 60 40 15 20 10 -50 -25 0 25 50 75 100 125 150 0 T /°C Figure 4 Typical On-State Resistance 5.1.2 Input Circuit 5 10 15 Vbb /V 20 25 Figure 5 shows the input circuit of the BTS5242-2L. There is an integrated input resistor that makes external components obsolete. The current sink to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. IN RIN IIN GND Input.emf Figure 5 Data Sheet Input Circuit (IN1 and IN2) 10 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. IN tON VOUT tOFF t 90% 70% dV / dtOFF 40% 30% dV /dtON 10% t Figure 6 Switching a Load (resistive) 5.1.3 Inductive Output Clamp SwitchOn.emf When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. V bb VBB IL OUT V OUT GND L, RL OutputClamp .emf Figure 7 Output Clamp (OUT1 and OUT2) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. V OUT IN = 5V IN = 0V Vbb t V OUT(CL) IL t Figure 8 Data Sheet InductiveLoad.emf Switching an Inductance 11 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Block Description and Electrical Characteristics Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS5242-2L. This energy can be calculated with following equation: V OUT(CL) RL ⋅ IL L - ⋅ ln 1 – ---------------------E = ( V bb – V OUT(CL) ) ⋅ ---------------------- + I L ⋅ -----RL R V OUT(CL) L Following equation simplifies under the assumption of RL = 0: V bb 2 1 E = --- LI L ⋅ 1 – ---------------------- 2 V OUT(CL) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation. VBB = 12V EAS (mJ) 1000 100 10 2 3 4 6 8 10 IL (A) Figure 9 Data Sheet Maximum energy dissipation single pulse, Tj,Start = 150°C 12 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Block Description and Electrical Characteristics 5.1.4 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions min. typ. max. 4.5 – 28 – – 1.6 3.2 4 8 General 5.1.1 Operating voltage Vbb 5.1.2 Operating current IGND one channel all channels 5.1.3 Standby current for whole device with load Ibb(OFF) – 5 – – V VIN = 4.5 V RL = 12 Ω VDS < 0.5 V mA VIN = 5 V IL = 5 A µA VIN = 0 V VCLA = 0 V VOUT < VOUT(OL) Tj = 25°C Tj = 105°C Tj = 150°C mΩ IL = 5 A Tj = 25 °C Tj = 150 °C mV IL < 0.5 A A Ta = 85 °C Tj ≤ 150 °C 1) 2) A Tc = 85 °C VDS = 0.5 V 2) 7.5 7.5 20 Output characteristics 5.1.4 On-State resistance per channel 5.1.5 Output voltage drop limitation at small load currents RDS(ON) VDS(NL) IL(nom) 5.1.6 Nominal load current per channel one channel active two channels active – – 19 35 25 48 – 40 – 5.5 4.1 IL(ISO) ISO load current per channel one channel active two channels active 5.1.7 Output clamp VOUT(CL) 5.1.8 Output leakage current per channel IL(OFF) 6 4.5 – – 13 13 15 15 – – -24 -20 -17 V IL = 40 mA – 1.5 8 µA VIN = 0 V Input characteristics 5.1.9 Input resistance for pin IN RIN 2.0 3.5 5.5 kΩ 5.1.10 L-input level for pin IN VIN(L) -0.3 – 1.0 V 5.1.11 H-input level for pin IN VIN(H) 2.4 – 5.1.12 Hysteresis for pin IN ∆VIN – 0.5 – V 3) 5.1.13 L-input current for pin IN IIN(L) 3 – 40 µA VIN = 0.4 V 5.1.14 H-input current for pin IN IIN(H) 20 50 90 µA VIN = 5 V 5.1.15 Turn-on time to 90% Vbb tON – 90 250 µs RL = 12 Ω Vbb = 13.5 V 5.1.16 Turn-off time to 10% Vbb tOFF – 100 250 µs RL = 12 Ω Vbb = 13.5 V V Timings Data Sheet 13 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Block Description and Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. max. Unit Test Conditions 5.1.17 slew rate 10% to 30% Vbb dV/ dtON 0.1 0.25 0.45 V/µs RL = 12 Ω Vbb = 13.5 V 5.1.18 slew rate 70% to 40% Vbb -dV/ dtOFF 0.1 0.25 0.45 V/µs RL = 12 Ω Vbb = 13.5 V 1) Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 2) Not subject to production test, parameters are calculated from RDS(ON) and Rth 3) Not subject to production test, specified by design Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. 5.2 Pos. Thermal Resistance Parameter Symbol Limit Values Min. 5.2.1 5.2.2 1) Junction to Case 1) Junction to Ambient one channel on all channels on Typ. RthJC RthJA Unit Max. 1.8 – – 40 33 Conditions K/W – K/W 2) – – 1) Not subject to production test, specified by design. 2) EIA/JESD 52_2, FR4, 80 × 80 × 1.5 mm; 35µ Cu, 5µ Sn; 300 mm2 Data Sheet 14 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Protection Functions 6 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 6.1 Over Load Protection The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are two steps of current limitation. They can be selected by the CLA pin, but are additionally selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. IL 40 CLA = L 30 20 10 CLA = H 5 Figure 10 10 15 20 25 30 VDS CurrentLimitation.emf Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. IN IL IIS IL(LIM) t IL(SCr) t VIS(fault) t Figure 11 OverLoad .emf Shut Down by Over Temperature The CLA pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. Please note that the thresholds for high and low state differ between IN and CLA. Data Sheet 15 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Protection Functions 6.2 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. ∑ Pdiss(rev) = ( V DS(rev) ⋅I L ) all channels The reverse current through the power transistors has to be limited by the connected loads. The reverse current through the ground connection has to be limited either by a resistor or by a pair of resistor and diode. The current through sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The temperature protection is not active during reverse polarity. 6.3 Over Voltage Protection In addition to the output clamp for inductive loads as described in Section 5.1.3, there is a clamp mechanism for over voltage protection. The current through the ground connection has to be limited e.g. by a resistor. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor opens and the voltage across logic part is clamped. As a result, the ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and CLA rises almost to that potential, depending on the impedance of the connected circuitry. IN ZDAZ RIN VBB IS CLA RCLA logic ZDESD OUT GND V OUT RGND OverVoltage .emf Figure 12 Over Voltage Protection 6.4 Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS5242-2L securely changes to or stays in off state. Data Sheet 16 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Protection Functions 6.5 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. max. 40 7 50 11 60 14 Unit Test Conditions Over Load Protection 6.5.1 Load current limitation 6.5.2 Repetitive short circuit current limitation IL(LIM) IL(SCr) – – 6.5.3 Initial short circuit shut down time 40 7 A VDS = 5 V CLA = 2 V CLA = 4 V A Tj = Tj(SC) 1) CLA = 0 V CLA = 5 V ms TjStart = 25 °C 1) CLA = 0 V CLA = 5 V – – tOFF(SC) – – 0.8 4 – – 150 170 1) – °C – K 6.5.4 Thermal shut down temperature Tj(SC) 6.5.5 Thermal hysteresis ∆Tj – 10 -VDS(rev) – – 900 mV IL = -5 A Tj =150 °C Vbb(AZ) 41 47 52 V Ibb = 40 mA IL(GND) – – 2 mA IIN = 0 1) 2) IGND = 0 IIS = 0 - 1) Reverse Battery 6.5.6 Drain-Source diode voltage (VOUT > Vbb) Over Voltage 6.5.7 Over voltage protection Loss of GND 6.5.8 Output current while GND disconnected Current Limit Adjust (CLA) 6.5.9 Input resistance for pin CLA RCLA 2.0 3.5 5.5 kΩ 6.5.10 L-input level for pin CLA VCLA(L) -0.3 – 2.0 V 6.5.11 H-input level for pin CLA VCLA(H) 4.0 – – V 6.5.12 L-input current for pin CLA ICLA(L) 3 – 40 µA VCLA = 0.4 V 6.5.13 H-input current for pin CLA ICLA(H) 20 50 90 µA VCLA = 5 V 1) Not subject to production test, specified by design 2) Pins not connected Data Sheet 17 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Diagnosis 7 Diagnosis For diagnosis purpose, the BTS5242-2L provides an IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occurs. In case of a failure mode, the voltage VIS(fault) is fed to the diagnosis pin. S OL VBB IIS1 IN1 Rlim ROL gate control RIN1 IS1 OUT1 over temperature over load open load @ off 0 µC 1 V IS(fault) VOUT(OL) channel 1 IN2 Rlim gate control RIN2 IS2 diagnosis IIS2 RIS1 RIS2 GND OUT2 channel 2 load Sense.emf Figure 13 Block Diagram: Diagnosis Table 1 Truth Table Operation Mode Input Level Normal Operation (OFF) Output Level L Diagnostic Output Z Z Short Circuit to GND Z Z Over Temperature Z Z Short Circuit to Vbb Vbb VIS = VIS(fault) < VOUT(OL) > VOUT(OL) Z VIS = VIS(fault) ~Vbb IIS = IL / kILIS < Vbb VIS = VIS(fault) Open Load Normal Operation (ON) H Current Limitation Short Circuit to GND ~GND VIS = VIS(fault) Over Temperature Z VIS = VIS(fault) Short Circuit to Vbb Vbb IIS < IL / kILIS Open Load ~Vbb Z L = Low Level, H = High Level, Z = high impedance, potential depends on external circuit Data Sheet 18 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Diagnosis 7.1 ON-State Diagnosis The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ 7500 7000 6500 kILIS 6000 5500 5000 4500 4000 0 Figure 14 1 2 3 IL /A 4 5 6 Current sense ratio kILIS1) Details about timings between the diagnosis signal IIS and the output voltage VOUT and the load current IL in ONstate can be found in Figure 15. normal operation IN V OUT OFF over load (current limitation) ON t tON t IL IIS tsIS(ON) tsIS(LC) t tsIS(LC) VIS(fault) / RS t SwitchOn .emf Figure 15 Timing of Diagnosis Signal in ON-state In case of over-current as well as over-temperature, the voltage VIS(fault) is fed to the diagnosis pins as long as the according input pin is high. This means, even when the device keeps switching on and off in over-load condition, the failure signal is constantly available. Please refer to Figure 16 for details. 1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 7.3 (Position 7.3.7). Data Sheet 19 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Diagnosis over load (current limitation & thermal toggling) normal operation Tj Tj(SC) t IL tsIS(LC) IIS thIS(OTR) t V IS(fault) / RS t OverTemp .emf Figure 16 Timing of Diagnosis Signal in Over Load Condition 7.2 OFF-State Diagnosis Details about timings between the diagnosis signal IIS and the output voltage VOUT and the load current IL in OFFstate can be found in Figure 17. IN ON OFF t V OUT pull-up resistor inactive Open Load, pull-up resistor active IIS td(fault) ts(fault) t VIS(fault) / RS t SwitchOff.emf Figure 17 Timing of Diagnosis Signal in OFF-state For open load diagnosis in off-state an external output pull-up resistor (ROL) is recommended. For calculation of pull-up resistor, the leakage currents and the open load threshold voltage VOUT(OL) has to be taken into account. Depending on the application, an additional pull down resistor at the output might be necessary. V bb(min) – V OUT(OL,max) R OL = ---------------------------------------------------------I leakage Ileakage defines the leakage current in the complete system including IL(OL) and external leakages e.g. due to humidity. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off-state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. The stand-by current of the BTS5242-2L is minimized, when both input pins (IN1 and IN2) are on low level or left open and VOUT < VOUT(OL). In case of open load in off state (VOUT > VOUT(OL) and VIN = 0 V), the fault voltage VIS(fault) drives a current through the sense resistor, which causes an increase in supply current. To reduce the stand-by current to a minimum, the open load condition needs to be suppressed. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over voltage. Data Sheet 20 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Diagnosis 7.3 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. max. Unit Test Conditions Open Load at OFF state 7.3.1 Open load detection threshold voltage VOUT(OL) 2.0 3.2 4.4 V 7.3.2 Leakage current into OUT -IL(OL) – – 1 µA VOUT = 5 V 7.3.3 Sense signal in case of open load VIS(fault) 5.0 6.2 8 V VIN = 0 V VOUT > VOUT(OL) IIS = 1 mA 7.3.4 Sense signal current limitation IIS(LIM) 4 – – mA VIS = 0 V VIN = 0 V VOUT > VOUT(OL) 7.3.5 Sense signal invalid after negative input slope td(fault) – – 1.2 ms VIN = 5 V to 0 V VOUT > VOUT(OL) 7.3.6 Fault signal settling time – – 200 µs VIN = 0 V 1) VOUT = 0 V to > VOUT(OL) IIS = 1 mA ts(fault) Load Current Sense 7.3.7 Current sense ratio VIN = 5 V kILIS 4450 5800 6960 4750 5400 6050 4900 5350 5800 IL = 0.5 A IL = 3.0 A IL = 6.0 A 7.3.8 Current sense voltage limitation VIS(LIM) 5.4 6.5 7.5 V IL = 5 A 7.3.9 Current sense leakage/offset current IIS(LH) – – 5 µA VIN = 5 V IL = 0 A 7.3.10 Current sense settling time to IIS static ±10% after positive input slope tsIS(ON) – – 400 µs VIN = 0 V to 5 V IL = 5 A 1) 7.3.11 Current sense settling time to IIS static ±10% after change of load current tsIS(LC) – – 300 µs VIN = 5 V IL = 3 A to 5 A 1) 7.3.12 Fault signal hold time after thermal restart thIS(OTR) – – 1.2 ms 1) 1) Not subject to production test, specified by design Data Sheet 21 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Package Outlines BTS5242-2L 0.1 0.1 C 12x Seating Plane 1 5x 1 = 5 0.4 +0.13 0.25 M -0.035 8˚ C 0.7 ±0.15 (0.2) (4.4) CAB 10.3 ±0.3 0.25 B 4.2 ±0.1 7 1.6 ±0.1 (1.8) 5.1 ±0.1 12 7.5 ±0.1 1) 0.25 +0.075 2.6 MAX. (1.55) B 5˚ ±3˚ 0.8 8˚ 2) 6.4 ±0.1 1) A 0 +0.1 PG-DSO-12-9 (Plastic Dual Small Outline 2.35 ±0.1 Package Outlines BTS5242-2L 0.1 ±0.05 3) 8 ø0.8 x 0.1 -0.05 Depth 4) 1 6 7.8 ±0.1 (Heatslug) 1) Does not include 2) Stand OFF 3) Stand OUT 4) plastic or metal protrusion of 0.15 max. per side Pin 1 Index Marking; Polish finish All package corners max. R 0.25 Figure 18 PG-DSO-12-9 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm Data Sheet 22 Rev.1.2, 2008-09-01 Smart High-Side Power Switch BTS5242-2L Revision History 9 Revision History Revision Date Changes Rev 1.2 09-01-2008 Modification of the Figure 9 Rev.1.1 06-29-2007 all pages: added new Infineon logo Creation of the green data sheet. First page: Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green. page 8: table max. ratings: 4.1.7 parameter changed from 319 mJ to 130 mJ added test conditions Vbb = 12V note 4: added see figure 8 page 12: changed figure 9 page 13: 5.1.2 added Test condition IL = 5 A 5.1.7 parameter changed from -17 to -12V to -24 to -17V page 20: add paragraph: Depending on the application, an additional pull down resistor at the output might be necessary. Rev.1.0 Data Sheet 08-10-2004 initial version 23 Rev.1.2, 2008-09-01 Edition 2008-09-01 Published by Infineon Technologies AG 81726 Munich, Germany © 9/1/08 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. 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