D a t a S h e e t, V 1. 0 , D e c 20 0 5 BTS 5235G Smart High-Side Power Switch PROFET Tw o C ha nn el s , 60 m Ω Automotive Power Smart High-Side Power Switch BTS 5235G Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 Pin Assignment BTS 5235G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines BTS 5235G 10 10 10 10 11 14 16 16 17 17 17 18 19 20 22 23 24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 2 V1.0, 2005-12-19 Smart High-Side Power Switch PROFET BTS 5235G Product Summary P-DSO-20-21 The BTS 5235G is a dual channel high-side power switch in P-DSO-20-21 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Operating voltage Vbb(on) 4.5 … 28 V Over voltage protection Vbb(AZ) RDS(ON) 41 V 3.3 A Current limitation repetitive IL(nom) IL(LIM) IL(SCr) Standby current for whole device with load Ibb(OFF) 2.5 µA On-State resistance Nominal load current (one channel active) Current limitation 60 mΩ 23 A 6A Basic Features • • • • • • • Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behavior at under voltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability Type Ordering Code Package BTS 5235G SP000094799 P-DSO-20-21 Data Sheet 3 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Protective Functions • • • • • • • • • Reverse battery protection without external components Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Over voltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD) Diagnostic Functions • • • • • • • • Enhanced IntelliSense signal for each channel Enable function for diagnosis pins (IS1 and IS2) Proportional load current sense signal by current source High accuracy of current sense signal at wide load current range Open load detection in ON-state by load current sense Over load (current limitation) diagnosis in ON-state, signalling by voltage source Latched over temperature diagnosis in ON-state, signalling by voltage source Open load detection in OFF-state, signalling by voltage source Applications • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads • All types of resistive, inductive and capacitive loads • Suitable for loads with high inrush currents, so as lamps • Suitable for loads with low currents, so as LEDs • Replaces electromechanical relays, fuses and discrete circuits Data Sheet 4 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Overview 1 Overview The BTS 5235G is a dual channel high-side power switch (two times 60 mΩ) in P-DSO-20-21 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function, over load and over temperature alerts in ONstate and open load alert in OFF-state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology. 1.1 Block Diagram VBB channel 1 load current sense internal power supply logic IN1 IS1 gate control & charge pump ESD protection open load detection clamp for inductive load multi step load current limitation temperature sensor SEN OUT1 over load detection channel 2 IN2 IS2 control and protection circuit equivalent to channel 1 OUT2 RGND GND Figure 1 Data Sheet Block Diagram 5 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Overview 1.2 Terms Following figure shows all terms used in this data sheet. Vbb Ibb IIN1 IIN2 VIN1 VIN2 IIS1 IIS2 VIS1 VIS2 ISEN IN1 VBB IN2 BTS 5235G OUT1 SEN V DS1 VOUT1 IS1 OUT2 IS2 I L1 I L2 V DS2 V OUT2 GND VSEN IGND Terms2ch.emf Figure 2 Terms In all tables of electrical characteristics is valid: Channel related symbols without channel number are valid for each channel separately. Data Sheet 6 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Pin Configuration 2 Pin Configuration 2.1 Pin Assignment BTS 5235G (top view) VBB 1 20 VBB nc 2 19 OUT1 GND 3 18 OUT1 IN1 4 17 OUT1 IS1 5 16 VBB IS2 6 15 VBB IN2 7 14 OUT2 SEN 8 13 OUT2 nc 9 12 OUT2 10 11 VBB VBB Figure 3 Pin Configuration P-DSO-20-21 2.2 Pin Definitions and Functions Pin Symbol I/O Function 4 IN1 I Input signal for channel 1 7 IN2 I Input signal for channel 2 5 IS1 O Diagnosis output signal channel 1 6 IS2 O Diagnosis output signal channel 2 8 SEN I Sense Enable input for channel 1&2 17, 18 ,19 OUT1 1) O Protected high-side power output channel 1 12, 13, 14 OUT2 1) O Protected high-side power output channel 2 3 – Ground connection 1, 10, 11, VBB 2) 15, 16, 20 – Positive power supply for logic supply as well as output power supply 2, 9 – Not connected GND nc 1) All output pins of each channel have to be connected 2) All VBB pins have to be connected Data Sheet 7 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Electrical Characteristics 3 Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. Unless otherwise specified: Tj = 25 °C Pos. Parameter Symbol Limit Values min. Unit Test Conditions max. Supply Voltage Vbb Vbb(SC) 3.1.1 Supply voltage 3.1.2 Supply voltage for full short circuit protection (single pulse) (Tj(0) = -40 °C .. 150 °C) 3.1.3 VDS Supply Voltage for Load Dump Vbb(LD) 3.1.4 -16 28 V 0 28 V 52 V 41 V Voltage at power transistor protection L = 8 µH, R = 0.2 Ω 1) RI = 2 Ω 2) RL = 6.8 Ω Power Stages 3.1.5 Load current 3.1.6 Maximum energy dissipation single pulse 3.1.7 Power dissipation (DC) IL EAS Ptot IL(LIM) A 3) 0.58 J IL(0) = 2 A 4) Tj(0) = 150 °C 1.4 W Ta = 85 °C 5) Tj ≤ 150 °C V Logic Pins VIN -5 -16 10 IIN -2.0 -8.0 2.0 VSEN -5 -16 10 3.1.11 Current through sense enable ISEN pin -2.0 -8.0 2.0 -25 10 3.1.8 3.1.9 Voltage at input pin Current through input pin 3.1.10 Voltage at sense enable pin 3.1.12 Current through sense pin Data Sheet IIS 8 t ≤ 2 min mA t ≤ 2 min V t ≤ 2 min mA t ≤ 2 min mA V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Electrical Characteristics Unless otherwise specified: Tj = 25 °C Pos. Parameter Symbol Limit Values min. Unit Test Conditions max. Temperatures Tj 3.1.14 Dynamic temperature increase ∆Tj -40 150 °C - 60 °C Tstg -55 150 °C 3.1.13 Junction Temperature while switching 3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM VESD IN, SEN IS OUT kV -1 -2 -4 1 2 4 according to EIA/JESD 22-A 114B 1) R and L describe the complete circuit impedance including line, contact and generator impedances 2) Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse 5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Data Sheet 9 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Block Description and Electrical Characteristics 4 Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge pumps. 4.1.1 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described in Section 4.2.2. Tj = 25 °C 90 160 80 140 RDS(ON) /mΩ RDS(ON) /mΩ Vbb = 13.5 V 70 60 50 120 100 80 40 60 30 40 -50 -25 Figure 4 4.1.2 0 25 50 75 100 125 150 T /°C 0 5 10 15 Vbb /V 20 25 Typical On-State Resistance Input Circuit Figure 5 shows the input circuit of the BTS 5235G. There is an integrated input resistor that makes external components obsolete. The current sink to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. IN RIN IIN RGND GND Input.emf Figure 5 Data Sheet Input Circuit (IN1 and IN2) 10 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. IN VOUT tON tOFF t 90% 70% 70% dV /dtON dV /dtOFF 30% 30% 10% t Figure 6 4.1.3 SwitchOn.emf Switching a Load (resistive) Inductive Output Clamp When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. V bb VBB IL GND OUT V OUT L, RL OutputClamp.emf Figure 7 Output Clamp (OUT1 and OUT2) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. Data Sheet 11 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Block Description and Electrical Characteristics V OUT IN = 5V IN = 0V Vbb 0 t V OUT(CL) IL t Figure 8 InductiveLoad.emf Switching an Inductance Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS 5235G. This energy can be calculated with following equation: V OUT(CL) RL ⋅ IL L - ⋅ ln 1 – ---------------------E = ( V bb – V OUT(CL) ) ⋅ ---------------------- + I L ⋅ -----RL RL V OUT(CL) (1) This equation simplifies under the assumption of RL = 0: V bb 2 1 E = --- LI L ⋅ 1 – ---------------------- 2 V OUT(CL) (2) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation. Data Sheet 12 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Block Description and Electrical Characteristics Vbb = 12 V 0.6 0.5 0.4 EAS /J 0.3 0.2 0.1 0.05 0.04 2 Figure 9 Data Sheet 3 4 5 6 I /A 7 8 9 10 Maximum Energy Dissipation Single Pulse, Tj,Start = 150 °C 13 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Block Description and Electrical Characteristics 4.1.4 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions V VIN = 4.5 V RL = 12 Ω VDS < 0.5 V VIN = 5 V max. General Vbb 4.1.1 Operating voltage 4.1.2 Operating current IGND one channel active all channels active 4.1.3 Standby current for whole device with load 4.5 28 mA 1.8 3.6 4.0 8.0 Ibb(OFF) 1.5 µA VIN = 0 V VSEN = 0 V Tj = 25 °C Tj = 85 °C1) Tj = 150 °C mΩ IL = 2.5 A Tj = 25 °C Tj = 150 °C IL < 0.25 A 2.5 2.5 15 Output Characteristics 4.1.4 On-State resistance per channel RDS(ON) 4.1.5 Output voltage drop VDS(NL) limitation at small load currents 4.1.6 Nominal load current IL(nom) per channel one channel active two channels active 4.1.7 Output clamp 4.1.8 Output leakage current per channel 4.1.9 Inverse current capability Data Sheet VOUT(CL) IL(OFF) 45 90 60 115 40 mV A Ta = 85 °C Tj ≤ 150 °C 2) 3) IL = 40 mA VIN = 0 V 3.3 2.5 -16 -IL(inv) -13 -10 V 0.1 6.0 µA 3 14 A 1) V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Block Description and Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions K/W 1) K/W 1) 2) max. Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel active all channels active Rthjc Rthja 35 48 45 Input Characteristics 4.1.12 Input resistor 4.1.13 L-input level 4.1.14 H-input level 4.1.15 L-input current 4.1.16 H-input current RIN VIN(L) VIN(H) IIN(L) IIN(H) 1.8 3.5 5.5 kΩ -0.3 1.0 V 2.5 5.7 V 3 18 75 µA 10 38 75 µA 250 VIN = 0.4 V VIN = 5 V Timings 4.1.17 Turn-on time to 90% Vbb tON 100 4.1.18 Turn-off time to 10% Vbb tOFF 120 4.1.19 slew rate 30% to 70% Vbb dV/ dtON 0.1 0.25 4.1.20 slew rate 70% to 30% Vbb -dV/ dtOFF 0.1 0.25 RL = 12 Ω Vbb = 13.5 V 250 µs RL = 12 Ω Vbb = 13.5 V 0.5 V/µs RL = 12 Ω Vbb = 13.5 V 0.5 V/µs RL = 12 Ω Vbb = 13.5 V µs 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Data Sheet 15 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Protection Functions 4.2 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 4.2.1 Over Load Protection The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. IL 25 20 15 10 5 5 10 15 20 25 V DS CurrentLimitation.emf Figure 10 Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. IN t IL IL(LIM) IL(SCr) tOFF(SC) t IIS t Figure 11 OverLoad .emf Shut Down by Over Temperature with Current Limitation In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V). Data Sheet 16 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Protection Functions 4.2.2 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. 2 P diss(rev) = ∑ V bb ( V DS(rev) ⋅ I L ) + ------------R GND (3) all channels The reverse current through the intrinsic body diode has to be limited by the connected load. The current through sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The current through the ground pin (GND) is limited internally by RGND. The over-temperature protection is not active during reverse polarity. 4.2.3 Over Voltage Protection In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches on and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. IN ZDAZ RIN VBB IS SEN RSEN logic ZDESD internal ground RGND OUT V OUT GND OverVoltage .emf Figure 12 4.2.4 Over Voltage Protection Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS 5235G securely changes to or stays in off state. Data Sheet 17 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Protection Functions 4.2.5 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C , typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. Unit Test Conditions A VDS = 7 V VDS = 14 V VDS = 28 V 1) 2) Tj = Tj(SC) 2) 0.5 ms TjStart = 25 °C 2) 170 °C typ. max. Over Load Protection 4.2.1 Load current limitation IL(LIM) 4.2.2 Repetitive short circuit IL(SCr) current limitation 4.2.3 Initial short circuit shut tOFF(SC) down time 4.2.4 Thermal shut down temperature Tj(SC) Thermal hysteresis ∆Tj 4.2.5 23 42 A 14 28 A 3 14 A 6 150 2) 7 K 2) mV IL = -3.5 A Vbb = -13.5 V Tj = 150 °C Vbb = -13.5 V 2) Reverse Battery 4.2.6 Drain-Source diode voltage (VOUT > Vbb) -VDS(rev) 4.2.7 Reverse current through GND pin -IGND 900 65 mA Ground Circuit 4.2.8 Integrated Resistor in RGND GND line 115 220 350 Ω 41 47 53 V Ibb = 2 mA 1 mA IIN = 0, ISEN = 0, IIS = 0, IGND = 0 2) 3) Over Voltage 4.2.9 Over voltage protection Vbb(AZ) Loss of GND 4.2.10 Output leakage current while GND disconnected IL(GND) 1) Please note that an external forced VDS must not exceed Vbb + |VOUT(CL)| 2) Not subject to production test, specified by design 3) No connection at these pins Data Sheet 18 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Diagnosis 4.3 Diagnosis For diagnosis purpose, the BTS 5235G provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occurs. In case of a failure mode, the voltage VIS(fault) is fed to the diagnosis pin. S OL VBB IIS1 IN1 Rlim ROL gate control RIN1 IS1 OUT1 0 latch 1 over temperature over load SEN µC 1 RSEN V IS(fault) VOUT(OL) channel 1 IN2 Rlim open load @ off 0 gate control RIN2 IS2 0 RIS1 RIS2 GND IIS2 diagnosis 1 OUT2 channel 2 load Sense.emf Figure 13 Block Diagram: Diagnosis Table 1 Truth Table1) Operation Mode Input Level Output Level SEN = H SEN = L L GND Z Z GND Z Z Over Temperature Z Z Z Short Circuit to Vbb Vbb < VOUT(OL) > VOUT(OL) VIS = VIS(fault) Z Z Z Z Normal Operation (OFF) Short Circuit to GND Open Load Data Sheet 19 Diagnostic Output VIS = VIS(fault) V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Diagnosis Truth Table1) (cont’d) Table 1 Operation Mode Normal Operation (ON) Input Level Output Level H ~Vbb Current Limitation < Vbb Short Circuit to GND ~GND Over Temperature Z Short Circuit to Vbb Vbb Vbb Open Load Diagnostic Output SEN = H SEN = L IIS = IL / kILIS VIS = VIS(fault) VIS = VIS(fault) VIS = VIS(fault) IIS < IL / kILIS Z Z Z Z Z Z Z 1) L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit 4.3.1 ON-State Diagnosis The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to following Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ. 8000 dummy Tj = 150°C dummy Tj = -40°C 7000 6000 kILIS 5000 4000 3000 2000 1000 0 Figure 14 0.5 1 1.5 2 IL /A 2.5 3 3.5 4 Current sense ratio kILIS1) 1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.4 (Position 4.3.6). Data Sheet 20 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Diagnosis Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in ON-state can be found in Figure 15. normal operation IN OFF V OUT over load (current limitation) ON t tON t IL IIS tsIS(ON) tsIS(LC) t tsIS(OVL) VIS(fault) / RS t SwitchOn .emf Figure 15 Timing of Diagnosis Signal in ON-state In case of over-load as well as over-temperature, the voltage VIS(fault) is fed to the diagnosis pins as long as the according input pin is high. This means, even if the overload disappears after the first thermal shutdown or when the device keeps switching on and off in over-load condition (thermal toggling), the diagnosis signal(VIS(fault)) is constantly available. Please refer to Figure 16 for details. Please note, that if the overload disapears before the first thermal shutdown, the diagnosis signal (VIS(fault)) may remain for approximately 300 µs longer than the duration of the overload. As a result open load and over load including over temperature can be differentiated in ON-state. Consideration must be taken in the selection of the sense resistor in order to distinguish nominal currents from the overload/short circuit fault state. A potential of 5 V at the sense pin can be achieved with a big sense resistor even with currents being much smaller than the current limitation. Data Sheet 21 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Diagnosis over load (current limitation) IN OFF over temperature OFF ON IL(LIM) IL t tsIS(OVL) IIS VIS(fault) / RS t OverLoad.emf Figure 16 4.3.2 Timing of Diagnosis Signal in Over Load Condition OFF-State Diagnosis Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in OFF-state can be found in Figure 17. For open load diagnosis in OFFstate an external output pull-up resistor (ROL) is necessary. IN ON OFF t V OUT pull-up resistor inactive Open Load, pull-up resistor active IIS td(fault) ts(fault) t VIS(fault) / RS t SwitchOff.emf Figure 17 Timing of Diagnosis Signal in OFF-state For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. V bb(min) – V OUT(OL,max) R OL = ---------------------------------------------------------I leakage (4) Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS 5235G. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. Data Sheet 22 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Diagnosis 4.3.3 Sense Enable Function The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 18 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at pin SEN. SEN IIS tsIS(SEN) tdIS(SEN) tsIS(SEN) tdIS(SEN) t t Figure 18 SEN.emf Timing of Sense Enable Signal The SEN pin circuit is designed equally to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS 5235G is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level. Data Sheet 23 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Diagnosis 4.3.4 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions max. General Definition 4.3.1 Diagnostics signal in failure mode VIS(fault) 5 4.3.2 Diagnostics signal current limitation in failure mode IIS(LIM) 3 1.6 9 V mA VIN = 0 V VOUT = Vbb IIS = 1 mA VIN = 0 V VOUT = Vbb Open Load at OFF-State 4.3.3 Open load detection threshold voltage VOUT(OL) 4.3.4 Sense signal invalid after negative input slope 4.3.5 Fault signal settling time 2.8 4.4 V td(fault) 1.2 ms VIN = 5 V to 0 V VOUT = Vbb ts(fault) 200 µs VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA Load Current Sense ON-State 4.3.6 Current sense ratio kILIS IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A 4.3.7 Current sense voltage VIS(LIM) limitation 4.3.8 Current sense leakage/offset current Data Sheet VIN = 5 V Tj = -40 °C 2870 1000 2300 2410 2465 4035 3050 2920 2850 8000 3580 3380 3275 1400 2465 2520 2580 3410 2920 2875 2870 6000 3275 3220 3160 5.0 6.2 7.5 V 3.5 µA IIS(LH) 24 Tj = 150 °C IIS = 0.5 mA IL = 3.5 A VIN = 5 V IL = 0 A V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Diagnosis Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions max. IIS(dis) 1 µA VSEN = 0 V IL = 3.5 A 4.3.10 Current sense settling time to IIS static ±10% after positive input slope tsIS(ON) 350 µs VIN = 0 V to 5 V IL = 3.5 A 4.3.11 Current sense settling time to IIS static ±10% after change of load current tsIS(LC) 4.3.9 Current sense leakage, while diagnosis disabled 1) 50 µs VIN = 5 V IL = 1.3 A to 2.2 A 1) Over Load in ON-State 4.3.12 Over load detection current IL(OVL) 4.3.13 Sense signal settling time in overload condition tsIS(OVL) IL(LIM) A 8 VIN = 5 V VIS = VIS(fault) 1) 200 µs 5.5 kΩ VOUT = 2 V VIN = 0 V to 5 V Sense Enable RSEN L-input level VSEN(L) H-input level VSEN(H) L-input current ISEN(L) H-input current ISEN(H) Current sense settling tsIS(SEN) 4.3.14 Input resistance 1.8 4.3.15 -0.3 1.0 V 2.5 5.7 V 4.3.16 4.3.17 4.3.18 4.3.19 3.5 3 18 75 µA 10 38 75 µA 3 25 µs 25 µs time 4.3.20 Current sense deactivation time tdIS(SEN) VSEN = 0.4 V VSEN = 5 V VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL) VSEN = 5 V to 0 V IL = 3.5 A RS = 5 kΩ 1) 1) Not subject to production test, specified by design Data Sheet 25 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Package Outlines BTS 5235G 1.27 0.35 x 45˚ 7.6 -0.2 1) 0.23 +0.0 9 8˚ ma x 2.65 max 2.45 -0.2 Package Outlines BTS 5235G 0.2 -0.1 5 0.4 +0.8 0.35 +0.15 2) 0.2 24x 20 0.1 10.3 ±0.3 11 GPS05094 1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side Dimensions in mm Figure 19 P-DSO-20-21 (Plastic Dual Small Outline Package) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet 26 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Revision History 6 Revision History Version Date Changes V1.0 05-12-19 initial version • • • Data Sheet 27 2005-12-19 Smart High-Side Power Switch BTS 5235G Revision History Data Sheet 28 V1.0, 2005-12-19 Smart High-Side Power Switch BTS 5235G Edition 2005-12-19 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 12/19/05. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 29 2005-12-19 http://www.infineon.com Published by Infineon Technologies AG