IPP015N04N G Type IPB015N04N G OptiMOS™3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS(on),max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB015N04N G IPP015N04N G Package PG-TO263-3 PG-TO220-3 Marking 015N04N 015N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 120 V GS=10 V, T C=100 °C 120 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche current, single pulse 3) I AS T C=25 °C 100 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 865 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 2009-11-16 IPP015N04N G IPB015N04N G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 250 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 0.6 minimal footprint - - 62 6 cm² cooling area 4) - - 40 40 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=200 µA 2 - 4 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 2 V DS=40 V, V GS=0 V, T j=125 °C - 20 200 I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=10 V, I D=100 A - 1.2 1.5 mΩ - 1.5 - Ω 120 230 - S Gate-source leakage current Drain-source on-state resistance 5) Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A V µA 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Rev. 2.2 Measured from drain tab to source pin page 2 2009-11-16 IPP015N04N G IPB015N04N G Parameter Values Symbol Conditions Unit min. typ. max. - 15000 20000 pF - 4000 5300 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=20 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 160 - Turn-on delay time t d(on) - 40 - Rise time tr - 10 - Turn-off delay time t d(off) - 64 - Fall time tf - 13 - Gate to source charge Q gs - 76 - Gate charge at threshold Q g(th) - 46 - Gate to drain charge Q gd - 23 - Switching charge Q sw - 75 - Gate charge total Qg - 188 250 Gate plateau voltage V plateau - 5.0 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 177 - nC Output charge Q oss V DD=20 V, V GS=0 V - 147 - - - 120 - - 400 V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 Ω ns Gate Charge Characteristics 6) V DD=20 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.88 1.2 Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - 141 - 6) Rev. 2.2 T C=25 °C A V nC See figure 16 for gate charge parameter definition page 3 2009-11-16 IPP015N04N G IPB015N04N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 140 300 120 250 100 80 I D [A] P tot [W] 200 150 60 100 40 50 20 0 0 0 50 100 150 0 200 50 100 T C [°C] 150 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 200 T C [°C] 100 limited by on-state resistance 1 µs 10 µs 0.5 DC 1 ms 10-1 I D [A] 10 ms 101 0.05 0.02 10 10 -2 0.01 0 single pulse 10-1 10 10-3 -1 10 0 10 1 10 2 V DS [V] Rev. 2.2 0.2 0.1 Z thJC [K/W] 10 100 µs 2 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-11-16 IPP015N04N G IPB015N04N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 600 3 7V 5V 6.5 V 10 V 500 2.5 2 6V R DS(on) [mΩ] I D [A] 400 300 5.5 V 200 5.5 V 6V 6.5 V 1.5 7V 10 V 1 100 0.5 5V 0 0 0 1 2 3 0 40 80 V DS [V] 120 160 200 160 200 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 600 350 300 500 250 g fs [S] I D [A] 400 300 200 150 200 100 175 °C 100 50 25 °C 0 0 1 2 3 4 5 6 7 Rev. 2.2 0 40 80 120 I D [A] V GS [V] page 5 2009-11-16 IPP015N04N G IPB015N04N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=1mA 3 5 2.5 4 V GS(th) [V] R DS(on) [mΩ] 2 98 % 1.5 typ 3 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 1000 25 °C, 98% Ciss 104 175 °C, 98% Coss 25 °C I F [A] C [pF] 100 103 175 °C Crss 10 102 101 1 0 10 20 30 Rev. 2.2 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-11-16 IPP015N04N G IPB015N04N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 12 20 V 10 8V 100 32 V 8 V GS [V] I AV [A] 25 °C 100 °C 150 °C 10 6 4 2 1 0 10-1 100 101 102 103 0 50 t AV [µs] 100 150 200 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 45 V GS Qg V BR(DSS) [V] 40 35 V g s(th) 30 25 Q g(th) Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.2 page 7 2009-11-16 IPP015N04N G IPB015N04N G Package Outline Rev. 2.2 PG-TO263-3 page 8 2009-11-16 IPP015N04N G IPB015N04N G Package Outline Rev. 2.2 PG-TO220-3-1 page 9 2009-11-16 IPP015N04N G IPB015N04N G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 2009-11-16