INFINEON TLE42744EV50

Data Sheet, Rev. 1.1, January 2010
TLE42744
Low Dropout Linear Voltage Regulator
Automotive Power
Low Dropout Linear Voltage Regulator
1
TLE42744
Overview
Features
•
•
•
•
•
•
•
•
•
•
Very Low Current Consumption
Output Voltages 5 V and 3.3 V ±2%
Output Current up to 400 mA
Very Low Dropout Voltage
Output Current Limitation
Reverse Polarity Protection
Overtemperature Shutdown
Wide Temperature Range
From -40 °C up to 150 °C
Green Product (RoHS compliant)
AEC Qualified
PG-TO252-3
PG-SSOP-14 exposed pad
PG-TO263-3
PG-SOT223-4
Description
The TLE42744 is a monolithic integrated low dropout voltage regulator for load currents up to 400 mA. An input
voltage up to 40 V is regulated to VQ,nom = 5 V / 3.3 V with a precision of ±2%. The device is designed for the harsh
environment of automotive applications. Therefore it is protected against overload, short circuit and
overtemperature conditions by the implemented output current limitation and the overtemperature shutdown
circuit. The TLE42744 can be also used in all other applications requiring a stabilized 5 V / 3.3 V voltage.
Due to its very low quiescent current the TLE42744 is dedicated for use in applications permanently connected to
VBAT.
Type
Package
Marking
TLE42744DV50
PG-TO252-3
42744V5
TLE42744GV50
PG-TO263-3
42744V5
TLE42744EV50
PG-SSOP-14 exposed pad
42744V5
TLE42744DV33
PG-TO252-3
42744V33
TLE42744GV33
PG-TO263-3
42744V33
TLE42744GSV33
PG-SOT223-4
42744V33
Data Sheet
2
Rev. 1.1, 2010-01-13
TLE42744
Block Diagram
2
Block Diagram
Saturation
Control and
Protection
Circuit
Temperature
Sensor
Ι
Q
Control
Amplifier
Buffer
Bandgap
Reference
GND
AEB01959
Figure 1
Data Sheet
Block Diagram
3
Rev. 1.1, 2010-01-13
TLE42744
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment PG-TO252-3, PG-TO263-3 and PG-SOT223-4
GND
4
GND
1
3
1
I
Ι
Q
AEP02561
Ι GND Q
2
GND
3
Q
PinConfig_PG-SOT2234.vsd
AEP02281
Figure 2
Pin Configuration (top view)
3.2
Pin Definitions and Functions PG-TO252-3, PG-TO263-3and PG-SOT223-4
Pin No.
Symbol Function
1
I
Input
block to ground directly at the IC with a ceramic capacitor
2
GND
Ground
internally connected to heat slug
3
Q
Output
block to ground with a capacitor close to the IC terminals, respecting the values given
for its capacitance and ESR in “Functional Range” on Page 7
Heat Slug / 4
–
Heat Slug
internally connected to GND;
connect to GND and heatsink area
Data Sheet
4
Rev. 1.1, 2010-01-13
TLE42744
Pin Configuration
3.3
Pin Assignment PG-SSOP-14 exposed pad
QF
QF
QF
,
QF
QF
*1'
QF
QF
QF
QF
4
QF
QF
7/(B3,1&21),*B6623
69*
Figure 3
Pin Configuration (top view)
3.4
Pin Definitions and Functions PG-SSOP-14 exposed pad
Pin No.
Symbol Function
1, 2, 3, 5, 6, 7
n.c.
not connected
can be open or connected to GND
4
GND
Ground
8, 10, 11, 12,
14
n.c.
not connected
can be open or connected to GND
9
Q
Output
block to ground with a capacitor close to the IC terminals, respecting the values given
for its capacitance and ESR in “Functional Range” on Page 7
13
I
Input
block to ground directly at the IC with a ceramic capacitor
Pad
–
Exposed Pad
connect to GND and heatsink area
Data Sheet
5
Rev. 1.1, 2010-01-13
TLE42744
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
Tj = -40 °C to 150 °C; all voltages with respect to ground, (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Max.
Unit
Test Condition
Input I
4.1.1
Voltage
VI
-42
45
V
–
Voltage
VQ
-1
40
V
–
Tj
Tstg
-40
150
°C
–
-50
150
°C
–
VESD,HBM
-4
4
kV
Human Body Model
(HBM)2)
VESD,CDM
-1000
1000
V
Charge Device
Model (CDM)3) at all
pins
Output Q
4.1.2
Temperature
4.1.3
Junction temperature
4.1.4
Storage temperature
ESD Susceptibility
4.1.5
ESD Absorption
4.1.6
1) not subject to production test, specified by design
2) ESD susceptibility Human Body Model “HBM” according to AEC-Q100-002 - JESD22-A114
3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
6
Rev. 1.1, 2010-01-13
TLE42744
General Product Characteristics
4.2
Pos.
Functional Range
Parameter
Symbol
Limit Values
Min.
Max.
Unit
Remarks
4.2.1
Input voltage
VI
5.5
40
V
TLE42744DV50,
TLE42744GV50,
TLE42744EV50
4.2.2
Input voltage
VI
4.7
40
V
TLE42744GV33,
TLE42744DV33,
TLE42744GSV33
4.2.3
–
µF
1)
–
3
Ω
2)
4.2.5
Junction temperature
CQ
ESR(CQ)
Tj
22
4.2.4
Output Capacitor’s
Requirements for Stability
-40
150
°C
–
1) the minimum output capacitance requirement is applicable for a worst case capacitance tolerance of 30%
2) relevant ESR value at f = 10 kHz
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
TLE42744DV50, TLE42744DV33 (PG-TO252-3)
4.3.1
Junction to Case1)
RthJC
–
3.6
–
K/W
measured to heat
slug
4.3.2
Junction to Ambient1)
RthJA
–
27
–
K/W
2)
4.3.3
–
115
–
K/W
footprint only3)
4.3.4
–
52
–
K/W
300 mm² heatsink
area3)
4.3.5
–
40
–
K/W
600 mm² heatsink
area3)
K/W
measured to heat
slug
TLE42744GV50, TLE42744GV33 (PG-TO263-3)
4.3.6
Junction to Case1)
RthJC
–
3.6
–
4.3.7
Junction to Ambient1)
RthJA
–
22
–
4.3.8
–
74
–
K/W
footprint only3)
4.3.9
–
42
–
K/W
300 mm² heatsink
area3)
4.3.10
–
34
–
K/W
600 mm² heatsink
area3)
Data Sheet
7
2)
Rev. 1.1, 2010-01-13
TLE42744
General Product Characteristics
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
TLE42744EV50 (PG-SSOP-14 exposed pad)
4.3.11
Junction to Case1)
RthJC
–
7
–
K/W
measured to
exposed pad
4.3.12
Junction to Ambient1)
RthJA
–
43
–
K/W
2)
4.3.13
–
120
–
K/W
footprint only3)
4.3.14
–
59
–
K/W
300 mm² heatsink
area3)
4.3.15
–
49
–
K/W
600 mm² heatsink
area3)
TLE42744GSV33 (PG-SOT223-4)
4.3.16
Junction to Case1)
RthJC
–
17
–
K/W
measured to heat
slug
4.3.17
Junction to Ambient1)
RthJA
–
54
–
K/W
2)
4.3.18
–
139
–
K/W
footprint only3)
4.3.19
–
73
–
K/W
300 mm² heatsink
area3)
4.3.20
–
64
–
K/W
600 mm² heatsink
area3)
1) Not subject to production test, specified by design.
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
3) Specified RthJA value is according to Jedec JESD 51-3 at natural convection on FR4 1s0p board; The Product
(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm3 board with 1 copper layer (1 x 70µm Cu).
Data Sheet
8
Rev. 1.1, 2010-01-13
TLE42744
Electrical Characteristics
5
Electrical Characteristics
5.1
Electrical Characteristics Voltage Regulator
Electrical Characteristics
VI =13.5 V; Tj = -40 °C to 150 °C; all voltages with respect to ground (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Measuring Condition
Output Q
5.1.1
Output Voltage
VQ
4.9
5.0
5.1
V
TLE42744DV50,
TLE42744GV50,
TLE42744EV50
5 mA < IQ< 400 mA
6 V < VI < 28 V
5.1.2
Output Voltage
VQ
4.9
5.0
5.1
V
TLE42744DV50,
TLE42744GV50,
TLE42744EV50
5 mA < IQ<200 mA
6 V < VI < 40 V
5.1.3
Output Voltage
VQ
3.23
3.3
3.37
V
TLE42744GV33,
TLE42744DV33,
TLE42744GSV33;
5 mA < IQ< 400 mA
4.7 V < VI < 28 V
5.1.4
Output Voltage
VQ
3.23
3.3
3.37
V
TLE42744GV33,
TLE42744DV33,
TLE42744GSV33;
5 mA < IQ<200 mA
4.7 V < VI < 40 V
5.1.5
Dropout Voltage
Vdr
–
250
500
mV
TLE42744DV50,
TLE42744GV50,
TLE42744EV50
IQ = 250 mA
Vdr = VI – VQ1)
5.1.6
Load Regulation
∆VQ, lo
–
20
50
mV
TLE42744DV50,
TLE42744GV50,
TLE42744EV50;
IQ = 5 mA to 400 mA
VI = 6 V
5.1.7
Load Regulation
∆VQ, lo
–
40
70
mV
TLE42744GV33,
TLE42744DV33,
TLE42744GSV33;
IQ = 5 mA to 300 mA
5.1.8
Line Regulation
∆VQ, li
–
10
25
mV
Vl = 12 V to 32 V
IQ = 5 mA
5.1.9
Output Current Limitation
IQ
400
600
1100
mA
1)
5.1.10
Power Supply Ripple Rejection2)
PSRR
–
60
–
dB
fr = 100 Hz; Vr = 0.5 Vpp
Data Sheet
9
Rev. 1.1, 2010-01-13
TLE42744
Electrical Characteristics
Electrical Characteristics
VI =13.5 V; Tj = -40 °C to 150 °C; all voltages with respect to ground (unless otherwise specified)
Pos.
Parameter
Symbol
2)
Limit Values
Unit
Measuring Condition
Min.
Typ.
Max.
dVQ
----------dT
–
0.5
–
mV/K
–
5.1.11
Temperature Output Voltage Drift
5.1.12
Overtemperature Shutdown
Threshold
Tj,sd
151
–
200
°C
Tj increasing2)
5.1.13
Overtemperature Shutdown
Threshold Hysteresis
Tj,sdh
–
25
–
°C
Tj decreasing2)
220
µA
IQ = 1 mA
Current Consumption
5.1.14
Quiescent Current
Iq = II – IQ
Iq
–
100
5.1.15
Current Consumption
Iq = II – IQ
Iq
Iq
–
8
15
mA
IQ = 250 mA
–
15
25
mA
TLE42744DV50,
TLE42744GV50,
TLE42744EV50;
IQ = 400 mA
–
20
30
mA
TLE42744GV33,
TLE42744DV33,
TLE42744GSV33;
IQ = 400 mA
5.1.16
5.1.17
1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.
2) not subject to production test, specified by design
Data Sheet
10
Rev. 1.1, 2010-01-13
TLE42744
Electrical Characteristics
5.2
Typical Performance Characteristics Voltage Regulator
Current Consumption Iq versus
Output Current IQ
Current Consumption Iq versus
Low Output Current IQ
16
01_IQ_IQ.VSD
02_IQ_IQLOW.VSD
1,4
14
1,2
V I = 13.5 V
T j = 25 °C
12
V I = 13.5 V
T j = 25 °C
1
I q [mA]
I q [mA]
10
8
6
0,8
0,6
0,4
4
0,2
2
0
0
0
100
200
300
400
0
20
I Q [mA]
100
T j = 25 °C
400
0,2
350
0,1
300
-0,1
T j = 150 °C
450
I Q = 5 mA
V I = 13.5 V
0
04_VDR_IQ.VSD
500
V DR [mV]
∆V Q [%]
80
Dropout Voltage Vdr versus
Output Current IQ (5 V versions only)
03_VQ_TJ.VSD
0,5
0,3
60
I Q [mA]
Output Voltage Variation ∆VQ versus
Junction Temperature TJ
0,4
40
250
200
-0,2
150
-0,3
100
-0,4
50
-0,5
T j = -40 °C
0
-40
0
40
80
120 150
0
T j [°C]
Data Sheet
100
200
300
400
I Q [mA]
11
Rev. 1.1, 2010-01-13
TLE42744
Electrical Characteristics
Dropout Voltage Vdr versus
Junction Temperature (5 V versions only)
Maximum Output Current IQ versus
Input Voltage VI
05_VDR_TJ.VSD
500
450
800
400
I Q = 400 mA
350
300
IQ,max [mA]
V DR [mV]
06_IQMAX_VI.VSD
900
250
200
I Q = 100 mA
150
700
T j = 25 °C
600
T j = -40 °C
T j = 150 °C
500
400
300
100
200
V Q = V Q,nom - 100 mV
I Q = 10 mA
50
100
0
-40
0
40
80
120
0
160
0
T j [°C]
10
20
30
40
V I [V]
Region Of Stability: Output Capacitor’s ESR
ESR(CQ) versus Output Current IQ
ESR(C Q ) [Ω ]
10
07_ESR_IQ.VSD
Unstable
Region
1
C Q = 22 µF
V I = 13.5 V
Stable
Region
0,1
0,01
0
100
200
300
400
I Q [mA]
Data Sheet
12
Rev. 1.1, 2010-01-13
TLE42744
Package Outlines
6
Package Outlines
6.5 +0.15
-0.10
2.3 +0.05
-0.10
4.57
0.51 MIN.
0.15 MAX.
per side
0.9 +0.08
-0.04
B
5.4 ±0.1
0.8 ±0.15
9.9 ±0.5
6.22 -0.2
1 ±0.1
A
3x
0.75 ±0.1
0...0.15
0.5 +0.08
-0.04
2.28
1 ±0.1
0.25
M
A B
0.1
All metal surfaces tin plated, except area of cut.
Figure 4
Data Sheet
PG-TO252-3
13
Rev. 1.1, 2010-01-13
TLE42744
Package Outlines
4.4
10 ±0.2
1.27 ±0.1
B
0.1
A
8.5 1)
0.05
2.4
2.7 ±0.3
4.7 ±0.5
7.55 1)
9.25 ±0.2
(15)
1 ±0.3
0...0.3
0...0.15
0.75 ±0.1
0.5 ±0.1
1.05
8˚ MAX.
2.54
5.08
0.25
M
A B
1) Typical
All metal surfaces: tin plated, except area of cut.
Metal surface min. x=7.25, y=6.9
Figure 5
Data Sheet
0.1 B
GPT09362
PG-TO263-3
14
Rev. 1.1, 2010-01-13
TLE42744
Package Outlines
0.19 +0.06
0.08 C
0.15 M C A-B D 14x
0.64 ±0.25
1
8
1
7
0.2
M
D 8x
Bottom View
3 ±0.2
A
14
6 ±0.2
D
Exposed
Diepad
B
0.1 C A-B 2x
14
7
8
2.65 ±0.2
0.25 ±0.05 2)
0.1 C D
8˚ MAX.
C
0.65
3.9 ±0.11)
1.7 MAX.
Stand Off
(1.45)
0 ... 0.1
0.35 x 45˚
4.9 ±0.11)
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include dambar protrusion
PG-SSOP-14-1,-2,-3-PO V02
Figure 6
Data Sheet
PG-SSOP-14 exposed pad
15
Rev. 1.1, 2010-01-13
TLE42744
Package Outlines
1.6±0.1
6.5 ±0.2
3 ±0.1
A
0.1 MAX.
B
1
0.25 M A
2
3
2.3
0.7 ±0.1
4.6
3.5 ±0.2
0.5 MIN.
7 ±0.3
4
0.28 ±0.04
0.25 M B
0...10˚
SOT223-PO V04
Figure 7
PG-SOT223-4
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
16
Dimensions in mm
Rev. 1.1, 2010-01-13
TLE42744
Revision History
7
Revision History
Revision
Date
Changes
1.1
2010-01-13
Updated Version Data Sheet:
version TLE42744EV50 in PG-SSOP-14 exposed pad and all related description
added;
3.3V versions TLE42744GV33 in PG-TO263-3, TLE42744DV33 in PG-TO252-3
and TLE42744GSV33 in PG-SOT223-4 and all related description added
1.0
2009-01-14
Initial Version final Data Sheet
Data Sheet
17
Rev. 1.1, 2010-01-13
Edition 2010-01-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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