X7S Dielectric General Specifications GENERAL DESCRIPTION X7S formulations are called “temperature stable” ceramics and fall into EIA Class II materials. Its temperature variation of capacitance is within ±22% from –55°C to +125°C. This capacitance change is non-linear. Capacitance for X7S varies under the influence of electrical operating conditions such as voltage and frequency. X7S dielectric chip usage covers the broad spectrum of industrial applications where known changes in capacitance due to applied voltages are acceptable. PART NUMBER (SEE PAGE 2 FOR COMPLETE PART NUMBER EXPLANATION) 1206 Z Z 105 M A T 2 A Size (L" x W") Voltage 4 = 4V 6 = 6.3V Z = 10V Y = 16V 3 = 25V 5 = 50V 1 = 100V 2 = 200V Dielectric Z = X7S Capacitance Code (In pF) 2 Sig. Digits + Number of Zeros Capacitance Tolerance K = ±10% M = ±20% Failure Rate A = N/A Terminations T = Plated Ni and Sn Packaging 2 = 7" Reel 4 = 13" Reel 7 = Bulk Cass. Special Code A = Std. Product NOTE: Contact factory for availability of Tolerance Options for Specific Part Numbers. X7S Dielectric Typical Temperature Coefficient ⌬ Capacitance vs. Frequency 10 +30 +20 % ⌬ Capacitance % Cap Change 5 0 -5 -10 -15 -20 -25 -60 -40 -20 +10 0 -10 -20 -30 1KHz 0 20 40 60 80 100 120 140 Temperature (°C) 10 KHz 100 KHz 1 MHz 10 MHz Insulation Resistance (Ohm-Farads) TYPICAL ELECTRICAL CHARACTERISTICS Insulation Resistance vs Temperature 10,000 1,000 100 0 0 20 40 Variation of Impedance with Cap Value Impedance vs. Frequency 1,000 pF vs. 10,000 pF - X7S 0805 10 Impedance, ⍀ Impedance, ⍀ 10,000 pF 1.00 0.10 0.01 10 100 Frequency, MHz 20 1000 1.0 0.1 1 10 120 1206 0805 1210 1.0 0.1 .01 .01 100 10 Impedance, ⍀ 1206 0805 1210 1,000 pF 80 Variation of Impedance with Chip Size Impedance vs. Frequency 100,000 pF - X7S Variation of Impedance with Chip Size Impedance vs. Frequency 10,000 pF - X7S 10.00 60 Temperature °C Frequency 100 Frequency, MHz 1,000 1 10 100 Frequency, MHz 1,000 X7S Dielectric Specifications and Test Methods Parameter/Test Operating Temperature Range Capacitance Insulation Resistance X7S Specification Limits -55ºC to +125ºC Within specified tolerance ≤ 2.5% for ≥ 50V DC rating ≤ 3.0% for 25V DC rating ≤ 3.5% for 16V DC rating ≤ 5.0% for ≤ 10V DC rating 100,000MΩ or 1000MΩ - μF, whichever is less Dielectric Strength No breakdown or visual defects Dissipation Factor Resistance to Flexure Stresses Appearance Capacitance Variation Dissipation Factor Insulation Resistance Solderability Resistance to Solder Heat Thermal Shock Load Life Load Humidity Appearance Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength Appearance Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength Appearance Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength Appearance Capacitance Variation Dissipation Factor Insulation Resistance Dielectric Strength No defects ≤ ±12% Measuring Conditions Temperature Cycle Chamber Freq.: 1.0 kHz ± 10% Voltage: 1.0Vrms ± .2V For Cap > 10 μF, 0.5Vrms @ 120Hz Charge device with rated voltage for 120 ± 5 secs @ room temp/humidity Charge device with 300% of rated voltage for 1-5 seconds, w/charge and discharge current limited to 50 mA (max) Deflection: 2mm Test Time: 30 seconds 1mm/sec Meets Initial Values (As Above) ≥ Initial Value x 0.3 ≥ 95% of each terminal should be covered with fresh solder No defects, <25% leaching of either end terminal 90 mm Dip device in eutectic solder at 230 ± 5ºC for 5.0 ± 0.5 seconds ≤ ±7.5% Meets Initial Values (As Above) Dip device in eutectic solder at 260ºC for 60 seconds. Store at room temperature for 24 ± 2 hours before measuring electrical properties. Meets Initial Values (As Above) Meets Initial Values (As Above) No visual defects Step 1: -55ºC ± 2º 30 ± 3 minutes ≤ ±7.5% Step 2: Room Temp ≤ 3 minutes Meets Initial Values (As Above) Step 3: +125ºC ± 2º 30 ± 3 minutes Meets Initial Values (As Above) Step 4: Room Temp ≤ 3 minutes Meets Initial Values (As Above) Repeat for 5 cycles and measure after 24 ± 2 hours at room temperature No visual defects ≤ ±12.5% ≤ Initial Value x 2.0 (See Above) ≥ Initial Value x 0.3 (See Above) Meets Initial Values (As Above) No visual defects ≤ ±12.5% Charge device with 1.5 rated voltage (≤ 10V) in test chamber set at 125ºC ± 2ºC for 1000 hours (+48, -0) Remove from test chamber and stabilize at room temperature for 24 ± 2 hours before measuring. Store in a test chamber set at 85ºC ± 2ºC/ 85% ± 5% relative humidity for 1000 hours (+48, -0) with rated voltage applied. ≤ Initial Value x 2.0 (See Above) ≥ Initial Value x 0.3 (See Above) Remove from chamber and stabilize at room temperature and humidity for 24 ± 2 hours before measuring. Meets Initial Values (As Above) 21 X7S Dielectric Capacitance Range PREFERRED SIZES ARE SHADED 0402 0603 0805 1206 1210 Reflow/Wave All Paper Reflow/Wave All Paper Reflow/Wave Paper/Embossed Reflow/Wave Paper/Embossed Reflow Only Paper/Embossed 1.00 ± 0.10 (0.040 ± 0.004) 0.50 ± 0.10 (0.020 ± 0.004) 0.25 ± 0.15 (0.010 ± 0.006) 6.3 1.60 ± 0.15 (0.063 ± 0.006) 0.81 ± 0.15 (0.032 ± 0.006) 0.35 ± 0.15 (0.014 ± 0.006) 6.3 25 2.01 ± 0.20 (0.079 ± 0.008) 1.25 ± 0.20 (0.049 ± 0.008) 0.50 ± 0.25 (0.020 ± 0.010) 4 3.20 ± 0.20 (0.126 ± 0.008) 1.60 ± 0.20 (0.063 ± 0.008) 0.50 ± 0.25 (0.020 ± 0.010) 6.3 10 3.20 ± 0.20 (0.126 ± 0.008) 2.50 ± 0.20 (0.098 ± 0.008) 0.50 ± 0.25 (0.020 ± 0.010) 6.3 Cap (pF) 22 A 0.33 (0.013) 䉲 Letter Max. Thickness L W 䉲 䉲 SIZE 䉲 Cap (μF 䉲 (t) Terminal T 䉲 (W) Width mm (in.) mm (in.) mm (in.) WVDC 100 150 220 330 470 680 1000 1500 2200 3300 4700 6800 0.010 0.015 0.022 0.033 0.047 0.068 0.10 0.15 0.22 0.33 0.47 0.68 1.0 1.5 2.2 3.3 4.7 10 22 47 100 WVDC 䉲 (L) Length 䉲 SIZE Soldering Packaging t C C C C G G G G G N N N N Q Q Q Q Q Z 6.3 6.3 0402 C 0.56 (0.022) 25 4 0603 E 0.71 (0.028) PAPER G 0.90 (0.035) 6.3 0805 J 0.94 (0.037) K 1.02 (0.040) 10 1206 M 1.27 (0.050) N 1.40 (0.055) 6.3 1210 P Q 1.52 1.78 (0.060) (0.070) EMBOSSED X 2.29 (0.090) Y 2.54 (0.100) Z 2.79 (0.110)