Bulletin PD-20520 rev. M 07/04 10MQ100N SCHOTTKY RECTIFIER 2.1 Amp IF(AV) = 2.1Amp VR = 100V Major Ratings and Characteristics Characteristics IF DC Description/ Features 10MQ100N Units 2.1 A VRRM 100 V IFSM @ tp = 5 µs sine 120 A VF @ 1.5Apk, TJ=125°C 0.68 V TJ range - 55 to 150 °C The 10MQ100N surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 10MQ100N SMA www.irf.com 1 10MQ100N Bulletin PD-20520 rev. M 07/04 Voltage Ratings Part number VR 10MQ100N Max. DC Reverse Voltage (V) 100 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings 10MQ Units IF(AV) Max. Average Forward Current * See Fig. 4 Parameters 1.5 A IFSM 120 Max. Peak One Cycle Non-Repetitive A Conditions 50% duty cycle @ TL = 126 °C, rectangular wave form. On PC board 9mm2 island (.013mm thick copper pad area) 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6, TJ = 25°C 30 EAS Non-Repetitive Avalanche Energy 1.0 mJ 10ms Sine or 6ms Rect. pulse IAR Repetitive Avalanche Current 0.5 A 10MQ Units 0.78 V @ 1A 0.85 V @ 1.5A Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 0.5A, L = 8mH Electrical Specifications Parameters VFM Max. Forward Voltage Drop (1) * See Fig. 1 Conditions 0.63 V @ 1A 0.68 V @ 1.5A 0.1 mA TJ = 25 °C * See Fig. 2 1 mA TJ = 125 °C VF(TO) Threshold Voltage 0.52 V TJ = TJ max. 78.4 mΩ IRM Max. Reverse Leakage Current (1) TJ = 25 °C TJ = 125 °C VR = rated VR rt Forward Slope Resistance CT Typical Junction Capacitance 38 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body 10000 V/µs dv/dt Max. Voltage Rate of Change (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters 10MQ TJ Max. Junction Temperature Range (*) - 55 to 150 Tstg Max. Storage Temperature Range RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight 80 SMA Device Marking IR1J dTj < 1 Rth( j-a) Conditions °C °C °C/W DC operation 0.07(0.002) g (oz.) Case Style (*) dPtot 2 - 55 to 150 Units Similar D-64 thermal runaway condition for a diode on its own heatsink www.irf.com 10MQ100N Bulletin PD-20520 rev. M 07/04 1 125°C 0.1 100°C 0.01 1 75°C 0.001 50°C 0.0001 25°C 0 0 20 40 60 80 100 TJ= 150°C Reverse Voltage - V R (V) TJ= 125°C Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage TJ= 25°C 100 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) R Reverse Current - I (mA) 10 TJ = 150°C TJ= 25°C 10 1 0 20 40 60 80 100 Reverse Voltage - V R(V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 10MQ100N Bulletin PD-20520 rev. M 07/04 1.6 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.4 140 130 Average Power Loss - (Watts) Allowable Case Temperature - (°C) 150 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 120 110 Square wave (D = 0.50) 80% Rated VR applied 100 1.2 1 DC RMSLimit 0.8 0.6 0.4 0.2 se e note (2) 90 0 0.4 0.8 1.2 1.6 2 0 2.4 0 Average Forward Current - I F(AV) (A) 0.8 1.2 1.6 2 2.4 Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Non - Repetitive Surge Current - I FSM (A) 0.4 Average Forward Current - I F(AV) (A) 100 Tj = 25˚C At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 10MQ100N Bulletin PD-20520 rev. M 07/04 Outline Table CATHODE Device Marking: IR1J 1.40 (.055) 1.60 (.062) AN OD E 1 2.50 (.098) 2.90 (.114) 2 1 P O LA R I TY 4.00 (.157) 2 PA R T N U M B ER 4.60 (.181) .152 (.006) .305 (.012) 1.47 MIN. (.058 MIN.) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208) 2.10 MAX. (.085 MAX. ) 1.27 MIN. (.050 MIN.) 5.53 (.218) SOLDERING PAD Outline SMA Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR1J VOLTAGE CURRENT IR LOGO YYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 10MQ100N Bulletin PD-20520 rev. M 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 10 M Q 100 N TR - 1 2 3 4 5 6 7 1 - Current Rating 2 - M = SMA 3 - Q = Schottky Q Series 4 - Voltage Rating (100 = 100V) 5 - N = New SMA 6 - y none = Box (1000 pieces) y TR = Tape & Reel (7500 pieces) 7 y none = Standard Production y PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 6 www.irf.com