IRF IRFI9540GPBF

PD - 95609
IRFI9540GPbF
•
Lead-Free
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7/29/03
IRFI9540GPbF
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IRFI9540GPbF
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IRFI9540GPbF
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IRFI9540GPbF
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IRFI9540GPbF
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IRFI9540GPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig. 14 For N and P Channel HEXFETS
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IRFI9540GPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E :
T H IS IS AN IR F I8 4 0 G
W IT H AS S E M B L Y
L O T CO D E 3 4 3 2
AS S E M B L E D O N W W 2 4 1 9 9 9
IN T H E AS S E M B L Y L IN E "K "
Note: "P" in assembly line
position indicates "Lead-Free"
IN T E R N AT IO N AL
R E C T IF IE R
L OGO
AS S E M B L Y
L OT CODE
P AR T N U M B E R
IR F I8 4 0 G
924K
34
32
D AT E C O D E
Y E AR 9 = 1 9 9 9
W E E K 24
L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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