Hyper 3 mm (T1) LED, Diffused Hyper-Bright LED LS 3366, LA 3366, LO 3366 LY 3366 Besondere Merkmale ● ● ● ● ● ● eingefärbtes, diffuses Gehäuse zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lötspieße mit Aufsetzebene gegurtet lieferbar Störimpulsfest nach DIN 40839 Features ● ● ● ● ● ● colored, diffused package optical coupling into light pipes for use as optical indicator solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839 Semiconductor Group 1 1998-09-18 LS 3366, LA 3366, LO 3366, LY 3366 Lichtstärke Luminous Intensity IF = 20 mA IV (mcd) Bestellnummer Ordering Code Typ Type Emissionsfarbe Color of Emission Gehäusefarbe Color of Package LS 3366-NR LS 3366-P LS 3366-Q LS 3366-R LS 3366-PS super-red red diffused 25 40 63 100 40 ... ... ... ... ... 200 80 125 200 320 Q62703-Q3457 Q62703-Q3458 Q62703-Q3459 Q62703-Q3460 Q62703-Q3461 LA 3366-PS LA 3366-Q LA 3366-R LA 3366-S LA 3366-QT amber orange diffused 40 63 100 160 63 ... ... ... ... ... 320 125 200 320 500 Q62703-Q3881 Q62703-Q3882 Q62703-Q3883 Q62703-Q3884 Q62703-Q3885 LO 3366-PS LO 3366-Q LO 3366-R LO 3366-S LO 3366-QT orange orange diffused 40 63 100 160 63 ... ... ... ... ... 320 125 200 320 500 Q62703-Q3127 Q62703-Q3172 Q62703-Q3173 Q62703-Q3174 Q62703-Q3175 LY 3366-PS LY 3366-Q LY 3366-R LY 3366-S LY 3366-QT yellow yellow diffused 40 63 100 160 63 ... ... ... ... ... 320 125 200 320 500 Q62703-Q3462 Q62703-Q3464 Q62703-Q3465 Q62703-Q3463 Q62703-Q3466 Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0. Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0. Semiconductor Group 2 1998-09-18 LS 3366, LA 3366, LO 3366, LY 3366 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS, LO, LA LY Betriebstemperatur Operating temperature range Top – 55... + 100 ˚C Lagertemperatur Storage temperature range Tstg – 55... + 100 ˚C Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 20 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 1 0.2 A Sperrspanung1) Reverse voltage1) VR Verlustleistung Power dissipation TA ≤ 25 ˚C Ptot Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Rth JA 1) 1) 3 80 V 55 500 mW K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. Semiconductor Group 3 1998-09-18 LS 3366, LA 3366, LO 3366, LY 3366 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LA LO LY Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 20 mA (typ.) λpeak (typ.) 645 622 610 591 nm Dominantwellenlänge Dominant wavelength IF = 20 mA (typ.) λdom (typ.) 632 615 605 587 nm Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA (typ.) ∆λ (typ.) 16 16 16 15 nm 2ϕ 70 70 70 70 Grad deg. Durchlaßspannung Forward voltage IF = 20 mA (typ.) VF (max.) VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom Reverse current VR = 3 V (typ.) IR (max.) IR 0.01 10 0.01 10 0.01 10 0.01 10 µA µA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Temperaturkoeffizient von λdom (IF = 20 mA) Temperature coefficient of λdom (IF = 20 mA) TCλ 0.014 0.062 0.067 0.096 nm/K Temperaturkoeffizient von λpeak, IF = 20 mA Temperature coefficient of λpeak, IF = 20 mA TCλ 0.14 0.13 0.13 nm/K (typ.) Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.) Semiconductor Group 0.13 (typ.) 4 – 1.95 – 1.78 – 1.67 – 2.51 mV/K 1998-09-18 LS 3366, LA 3366, LO 3366, LY 3366 Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA Relative spectral emission V (λ) = spektrale Augenempfindlichkeit Standard eye response curve OHL00235 100 Ι rel % 80 Vλ 60 yellow orange amber super-red 40 20 0 400 450 500 Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic 50 550 ϕ 600 650 nm λ 700 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 0.8 Semiconductor Group 0.6 0.4 0 20 5 40 60 80 100 120 1998-09-18 LS 3366, LA 3366, LO 3366, LY 3366 Durchlaßstrom IF = f (VF) Forward current TA = 25˚C 10 mA ΙF 5 Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) OHL00248 35 OHL00232 2 Ι F mA 30 25 10 1 yellow 20 5 15 10 0 10 5 5 10 -1 0 1.0 1.4 1.8 2.2 2.6 Relative Lichtstärke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25˚C ΙV 20 40 60 80 C 100 ΤA Relative Lichtstärke IV / IV(25˚C ) = f (TA) Relative luminous intensity IF = 20 mA OHL00233 10 1 0 3.0 V 3.4 VF OHL00238 Ι V 2.0 Ι V (25 C) Ι V (20 mA) 1.6 10 0 orange yellow amber super-red 5 1.2 10 -1 5 0.8 superred yellow orange/amber 10 -2 0.4 5 10 -3 -1 10 orange yellow amber super-red 5 10 0 Semiconductor Group 5 10 1 0 -20 mA 10 2 ΙF 6 0 20 40 60 C TA 100 1998-09-18 LS 3366, LA 3366, LO 3366, LY 3366 Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25OHL00322 ˚C 10 1 A ΙF 5 Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 ˚C tp D= tp T ΙF ΙF 5 10 -1 0.2 5 0.5 0.5 ΙF T D= 0.005 0.01 0.02 0.05 0.1 0.2 10 -1 tp tp D= T 5 T D= 0.005 0.01 0.02 0.05 0.1 10 0 OHL00316 10 0 A 5 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp Maßzeichnung Package Outlines (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 4.8 4.4 2.7 2.1 0.7 0.4 0.8 0.4 1.1 0.9 2.54 mm spacing 0.6 0.4 Area not flat 1.8 1.2 29.0 27.0 Kathodenkennzeichnung: Cathode mark: 3.7 3.5 6.1 5.7 3.4 3.1 0.6 0.4 Chip position Collector/ Cathode Semiconductor Group 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp ø2.9 ø2.7 10 -2 GEX06710 Kürzerer Lötspieß Short solder lead 7 1998-09-18