SRD 00111Z Silicon PIN Photodiode in TO-Package • • • • • • • • • • • Si-PIN-photodiode Designed for application in fiber-optic Transmission systems Sensitive receiver for the 1st window (850 nm) Suitable for bit rates up to 565 Mbit/s Low junction and low package capacitance Fast switching times Low dark current Low noise Hermetically sealed 3-pin metal case Cathode electrically isolated from case Type Ordering Code Connector/Flange SRD 00111Z Q62702-P3019 TO, without optics Maximum Ratings Parameter Symbol Reverse voltage VR 50 V Isolation voltage to case VR 100 V Junction temperature Tj 125 °C Storage temperature Tstg − 55 … 125 °C Soldering time (wave / dip soldering), distance between solder point and base plate ≥ 2 mm, 260 °C ts Semiconductor Group 1 Values 10 Unit s 02.95 SRD 00111Z Characteristics All data refer to an ambient temperature of 25 °C. Parameter Symbol Photosensitive area A Wavelength of max. sensitivity λSmax 850 Quantumn efficiency at λ = 850 nm η 0.8 Spectral sensitivity λ = 850 nm λ = 950 nm Sλ850 Sλ950 0.55 (≥ 0.45) 0.45 tr; tf 1 ns Junction capacitance at f = 1 MHz VR = 0 V VR = 1 V VR = 12 V VR = 20 V C0 C1 C12 C20 13 7 3.3 3 pF pF pF pF 3 dB bandwidth RL = 50 Ω, VR = 50 V, λ = 850 nm fc 500 MHz Dark current VR = 20 V, E = 0 ID 1 (≤ 5) Noise equivalent power VR = 20 V, λ = 850 nm NEP 3.3 × 10−14 W/√Hz Detectivity VR = 20 V, λ = 850 nm D* 3.1 × 1012 cm√Hz/W Temperature coefficient Ip TC 0.2 Isolation current, VIS = 100 V IIS 0.1 (≤ 1) Rise and fall time RL = 50 Ω, VR = 50 V, λ = 850 nm Semiconductor Group 2 Values Unit 1 mm2 nm A/W A/W nA %/K nA SRD 00111Z Relative Spectral Sensitivity S = S(λ λ) Photocurrent Ip = Ip (E) 100 100 90 80 10 60 Ip/[uA] Srel/[%] 70 50 1 40 30 0.1 20 10 0 400 600 800 0.01 0.001 1000 0.01 L/[nm] 0.1 1 10 E/[mW/cm2] Dark Current IR = IR(VR) Dark Current IR = IR(TA) E = 0, VR = 20 V 1000 100 100 10 10 Ir/[nA] Ir/[nA] 1 1 0.1 0.1 0.01 0.01 0.001 0.001 0 10 20 30 40 -50 -25 50 25 Ta/[°C] Vr/[V] Semiconductor Group 0 3 50 75 100 SRD 00111Z Dark Current IR = IR(VR) Junction Capacity C = C(VR) E = 0, f = 1 MHz 12 100000 125°C 10000 10 100°C 1000 75°C 8 C/[pF] Ir/[nA] 100 50°C 10 25°C 1 4 0°C 0.1 -10°C 2 0.01 0.001 0 0 10 20 0.1 30 Dark Current IR = IR(VR) 120 100 Rs/[Ohm] 80 60 40 20 0 20 40 60 Vr/[V] Semiconductor Group 1 10 Vr/[V] Vr/[V] 0 6 4 100 SRD 00111Z Package Outlines (Dimensions in mm) SRD 00111Z Semiconductor Group 5