SHINDENGEN Schottky Rectifiers (SBD) S30SC4M Dual OUTLINE DIMENSIONS Case : MTO-3P Unit : mm 40V 30A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● Small θ jc ● High current capacity APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=126℃ Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Repetitive Peak Surge Reverse Power PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃ Mounting Torque TOR (Recommended torque：0.5N･m) Ratings -40∼150 150 40 45 30 300 1000 0.8 Unit ℃ ℃ V V A A W N･m ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions IF =15A, Pulse measurement, Rating of per diode Forward Voltage VF Reverse Current IR VR=V RM, Pulse measurement, Rating of per diode Junction Capacitance Cj f=1MHz, V R=10V, Rating of per diode Thermal Resistance θjc junction to case Ratings Max.0.55 Max.10 Typ.590 Max.1.0 Unit V mA pF ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Forward Current IF [A] S30SC4M Forward Voltage 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0 0.2 0.4 0.6 Forward Voltage VF [V] 0.8 1 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 S30SC4M f=1MHz Tc=25°C TYP per diode S30SC4M Reverse Current 10000 1000 Reverse Current IR [mA] Tc=150°C [MAX] Tc=150°C [TYP] 100 Tc=125°C [TYP] Tc=100°C [TYP] 10 Tc=75°C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 S30SC4M Reverse Power Dissipation Reverse Power Dissipation PR [W] 50 DC D=0.05 40 0.1 0.2 0.3 30 0.5 20 SIN 10 0 0.8 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T S30SC4M Forward Power Dissipation 30 Forward Power Dissipation PF [W] DC D=0.8 25 0.3 20 SIN 0.5 0.2 0.1 0.05 15 10 5 0 0 10 20 30 40 50 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T S30SC4M Derating Curve Average Rectified Forward Current IO [A] 60 50 DC D=0.8 40 0.5 SIN 30 0.3 0.2 20 0.1 0.05 10 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V IO 0 0 VR tp D=tp /T T S30SC4M Peak Surge Forward Capability IFSM 500 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied Peak Surge Forward Current IFSM [A] 400 300 200 100 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP