DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC546; BC547 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification. DESCRIPTION handbook, halfpage1 NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. 3 2 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BC546 − 80 V BC547 − 50 V − 65 V − 45 V BC546 − 6 V BC547 collector-emitter voltage open base BC546 BC547 VEBO MIN. emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current Ptot total power dissipation Tstg − 200 mA − 500 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 0.25 K/mW Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain CONDITIONS MIN. TYP. MAX. IE = 0; VCB = 30 V − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA IC = 0; VEB = 5 V − − 100 nA IC = 10 µA; VCE = 5 V; see Figs 2, 3 and 4 − 90 − BC546B; BC547B − 150 − BC547C − 270 − BC546A DC current gain BC546A UNIT IC = 2 mA; VCE = 5 V; see Figs 2, 3 and 4 110 180 220 BC546B; BC547B 200 290 450 BC547C 420 520 800 BC547 110 − 800 BC546 110 − 450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA − 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 580 660 700 mV IC = 10 mA; VCE = 5 V − − 770 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1.5 − pF − Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 11 − pF fT transition frequency IC = 10mA; VCE = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 2 10 dB Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1999 Apr 15 3 − Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 MBH723 250 handbook, full pagewidth hFE 200 VCE = 5 V 150 100 50 0 10−2 10−1 1 102 10 IC (mA) 103 BC546A. Fig.2 DC current gain; typical values. MBH724 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 10 BC546B; BC547B. Fig.3 DC current gain; typical values. 1999 Apr 15 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 MBH725 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 BC547C. Fig.4 DC current gain; typical values. 1999 Apr 15 5 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 15 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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