DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current (max. 200 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching in industrial applications. DESCRIPTION handbook, halfpage1 PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. 1 2 3 2 MAM280 Fig.1 3 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −200 mA ICM peak collector current − −300 mA IBM peak base current − −100 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 23 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification PNP switching transistor 2N3906 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = −30 V − −50 nA emitter cut-off current IC = 0; VEB = −6 V − −50 nA DC current gain VCE = −1 V; note 1; see Fig.2 IC = −0.1 mA 60 − IC = −1 mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA 30 − ICBO collector cut-off current IEBO hFE collector-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 − −200 mV IC = −50 mA; IB = −5 mA; note 1 − −200 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 − −850 mV IC = −50 mA; IB = −5 mA; note 1 − −950 mV Cc collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 4 dB VCEsat Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA − 65 ns td delay time − 35 ns tr rise time − 35 ns toff turn-off time − 300 ns ts storage time − 225 ns tf fall time − 75 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 23 3 Philips Semiconductors Product specification PNP switching transistor 2N3906 MGD835 160 handbook, full pagewidth hFE 120 80 40 0 −10−2 −10−1 −1 −10 −102 VCE = 1 V. Fig.2 DC current gain; typical values. VBB ndbook, full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V. Oscilloscope input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 23 4 oscilloscope IC (mA) −103 Philips Semiconductors Product specification PNP switching transistor 2N3906 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 23 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP switching transistor 2N3906 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 23 6 Philips Semiconductors Product specification PNP switching transistor 2N3906 NOTES 1999 Apr 23 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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