PHILIPS BF422

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BF420; BF422
NPN high-voltage transistors
Product data sheet
Supersedes data of 1996 Dec 09
2004 Nov 10
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF420; BF422
FEATURES
PINNING
• Low feedback capacitance.
PIN
DESCRIPTION
1
base
APPLICATIONS
2
collector
• Class-B video output stages in colour television and
professional monitor equipment.
3
emitter
DESCRIPTION
NPN transistors in a TO-92 plastic package.
PNP complements: BF421 and BF423.
handbook, halfpage1
2
2
3
1
3
MAM259
Fig.1
Simplified outline (TO-92) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF420
SC-43A
DESCRIPTION
VERSION
plastic single-ended leaded (through hole) package; 3 leads
SOT54
BF422
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
300
V
−
250
V
BF420
−
300
V
BF422
−
250
V
−
100
mA
mW
BF420
BF422
VCEO
MIN.
collector-emitter voltage
open base
ICM
peak collector current
Ptot
total power dissipation
Tamb ≤ 25 °C
−
830
hFE
DC current gain
VCE = 20 V; IC = 25 mA
50
−
Cre
feedback capacitance
VCE = 30 V; IC = ic = 0 A; f = 1 MHz
−
1.6
pF
fT
transition frequency
VCE = 10 V; IC = 10 mA; f = 100 MHz
60
−
MHz
2004 Nov 10
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF420; BF422
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
collector-base voltage
MAX.
UNIT
open emitter
−
300
V
−
250
V
BF420
−
300
V
BF422
−
250
V
BF420
BF422
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
5
V
IC
collector current (DC)
−
50
mA
ICM
peak collector current
−
100
mA
IBM
peak base current
−
50
mA
Ptot
total power dissipation
−
830
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
150
K/W
note 1
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
MAX.
UNIT
VCB = 200 V; IE = 0 A
−
10
nA
VCB = 200 V; IE = 0 A; Tj = 150 °C
−
10
µA
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0 A
−
50
hFE
DC current gain
VCE = 20 V; IC = 25 mA
50
−
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5 mA
−
0.6
V
Cre
feedback capacitance
VCE = 30 V; IC = ic = 0 A; f = 1 MHz
−
1.6
pF
fT
transition frequency
VCE = 10 V; IC = 10 mA; f = 100 MHz
60
−
MHz
2004 Nov 10
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF420; BF422
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Nov 10
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
4
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF420; BF422
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Nov 10
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/03/pp6
Date of release: 2004 Nov 10
Document order number: 9397 750 13582