IRF 60LQ100

PD -20505A
60LQ100
SCHOTTKY RECTIFIER
60 Amp
Major Ratings and Characteristics
Characteristics
Desciption/Features
60LQ100
Units
IF(AV) Rectangular
waveform
60
A
VRRM
100
V
IFSM @ tp = 8.3ms sine
400
A
VF @ 60Apk, TJ = 125°C
(Per Leg)
0.70
V
TJ, Tstg Operating and storage -55 to 150
°C
The 60LQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi -rel
environments. It is packaged in the hermetic surface
mount SMD-1 ceramic package and has extremely low
reverse leakage at high temperature. Full MIL-PRF-19500
quality conformance testing is available on source control
drawings to JANTX, JANTXV and S levels. Typical
applications include switching power supplies and
resonant power converters.
•
•
•
•
Hermetically sealed
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
• Surface Mount
• Lightweight
CASE STYLE
3
3
IR Case Style SMD-1
Dimensions in millimeters and (inches)
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CATHODE ANODE ANODE
1
3/1/99
60LQ100
Voltage Ratings
Part number
VR
60LQ100
Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
60LQ100 Units
60
A
400
A
‚
See Fig. 5
I FSM
Max. Peak One Cycle Non - Repetitive
Conditions
50% duty cycle @ TC = 102°C, rectangular waveform
@ tp = 8.3 ms sine ‚
Surge Current
Electrical Specifications
Parameters
VFM
60LQ045
Units
Max. Forward Voltage Drop
0.62
V
@ 10A
See Fig. 1
0.95
V
@ 60A
1.15
V
@ 120A
TJ = 25°C ‚
0.68
V
@ 10A
TJ = -55°C ‚
0.70
V
@ 60A
TJ = 125°C ‚
0.97
V
0.8
mA
45
mA
TJ = 125°C
1400
pF
VR = 5V DC, ( 100KHz to 1MHz) 25°C ‚
nH
Measured from center of bond pad to end of anode
IRM
Max. Reverse Leakage Current
CT
Max. Junction Capacitance
LS
Typical Series Inductance
2.8
See Fig. 2
Conditions
@ 120A
TJ = 25°C VR = rated VR ‚
bonding wire
Thermal-Mechanical Specifications
Parameters
60LQ100
Units
TJ
Max.Junction Temperature Range
-55 to 150
°C
Tstg
Max. Storage Temperature Range
-55 to 150
°C
1.0
°C/W
DC operation
0.50
°C/W
DC operation
R thJC Max. Thermal Resistance, Junction
Conditions
See Fig. 4
to Case
R thJC
Max. Thermal Resistance, Junction
to case
wt
Weight (Typical)
2.6
Die Description (Square)
0.20
Case Style
g
inches
SMD-1
 Pulse Width < 300µs, Duty Cycle < 2%
‚ Pins 2 and 3 externally tied together
2
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60LQ100
Instantaneous Forward Current - IF (A)
Reverse Current - IR ( mA )
100
TJ = 150°C
125°C
10
100°C
1
0.1
0.01
25°C
0.001
A
0.0001
0
20
40
60
80
100
Reverse Voltage - VR (V)
150°C
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Junction Capacitance - C
T (pF)
10000
TJ = 25°C
1000
A
100
0
Forward Voltage Drop - V FM (V)
40
60
80
100
Reverse Voltage - V R(V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
10
Thermal Impedance - Z
thJC
(°C/W)
Fig. 1 - Max. Forward Voltage Drop Characteristics
20
P
DM
1
D
D
D
D
D
t
= 0.50
= 0.33
= 0.25
= 0.17
= 0.08
t2
N otes:
1. D uty facto r D = t / t
1 2
Single Pulse
(Thermal Resistance)
0.1
0.0001
1
0.001
2. P eak T = P
xZ
+T
J
DM
thJ C
C
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
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3
A
60LQ100
100
60LQ100
R t h J C (DC) = 1.0°C/W
140
Average Power Loss - (Watts)
Allowable Case Temperature - (°C)
160
120
DC
100
80
A
60
0
20
40
60
80
100
Average Forward Current - IF (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
D
D
D
D
D
80
60
=
=
=
=
=
0.08
0.17
0.25
0.33
0.50
40
DC
RMS Limit
20
A
0
0
20
40
60
80
100
Average Forward Current - IF (A)
Fig. 6 - Forward Power Loss
Characteristics
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Data and specifications subject to change without notice.
3/99
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