DDD RH1086MK W10913024.1 W17 Neutron Irradiation Test Results of the RH1086MK 1.5A Low Dropout Positive Adjustable Regulator 19 January 2015 Duc Nguyen, Sana Rezgui Acknowledgements The authors would like to thank the S-Power Product Engineering Groups from Linear Technology for the data collection pre- and post-irradiations. Special thanks are also for Thomas Regan from University of Massachusetts, Lowell (UMASS) for the help with the neutrons irradiation tests. P a g e 1 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Neutron Radiation Testing of the RH1086MK 1.5A Low Dropout Positive Adjustable Regulator Part Type Tested: RH1086MK 1.5A Low Dropout Positive Adjustable Regulator Traceability Information: Fab Lot# W10913024.1; Wafer # 17; Assembly Lot # 540912.1; Date Code 0941A. See photograph of unit under test in Appendix A. Quantity of Units: 7 units received, 2 units for control, and 5 units for unbiased irradiation. Leads of devices, serial numbers 54-56, 64, and 66 were shorted together using anti-static foam during irradiation. Serial numbers 69 and 70 were used as control. See Appendix B for the radiation bias connection tables. Radiation Dose: Total fluence of 1E12 neutron/cm2. Radiation Test Standard: MIL-STD-883 TM1017 and Linear Technology RH1086MK SPEC No. 05-08-5021. Test Hardware and Software: LTX test program EFCR1086.05 Facility and Radiation Source: University of Massachusetts, Lowell and Reactor Facility-FNI. Irradiation and Test Temperature: Room temperature controlled to 24°C±6°C per MIL-STD-883 and MIL-STD-750. SUMMARY ALL FIVE PARTS PASSED THE ELECTRICAL TEST LIMITS AS SPECIFIED IN THE DATASHEET AFTER IRRADIATION TO 1E12 N/cm2. ADDITIONAL INFORMATION CAN BE PROVIDED PER REQUEST. P a g e 2 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 1.0 Overview and Background Neutron particles incident on semiconductor materials lose energy along their paths. The energy loss produces electron-hole pairs (ionization) and displaces atoms in the material lattice (displacement damage defects or DDD). DDD induces a mixture of isolated and clustered defects or broken bonds. Such defects elevate the energy level of the material and consequently change material and electrical properties. The altering energy level creates the combination of any of the following processes, thermal generation of electron-hole pairs, recombination, trapping, compensation, tunneling, affecting hence the devices’ basic features. We run the electrical tests after we had made sure that the parts are not radioactive anymore to be shipped to LTC. Bipolar technology is susceptible to neutron displacement damage around a fluence level of 1E12 neutron/cm2. The neutron radiation test for the RH1086MK determines the change in device performance as a function of neutrons’ fluence. 2.0 Radiation Facility: Five samples were irradiated unbiased at the University of Massachusetts, Lowell, using the Reactor Facility-FNI. The neutron flux was determined by system S/P-32, method ASTM E-265, to be 4.05E9 N/cm2-s (1MeV equivalent) for each irradiation step. Refer to Appendix C for the certificate of dosimetry. 3.0 Test Conditions Five samples and two control units were electrically tested at 25°C prior to irradiation. The testing was performed on the two control units to confirm the operation of the test system prior to the electrical testing of the 7 units (5 irradiated and 2 control). During irradiation, devices leads were shorted together using anti-static foam and devices then were placed into an anti-static bag. Devices were then vertically aligned with the radiation source. The criteria to pass the neutron displacement damage test is that five irradiated samples must pass the datasheet limits. If any of the tested parameters of these five units do not meet the required limits then a failure-analysis of the part should be conducted in accordance with method 5004, MIL-STD-883, and if valid the lot will be scrapped. P a g e 3 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 4.0 Tested Parameters The following parameters were measured pre- and post-irradiations: - Reference Voltage (V) @ IOUT = 10mA, (VIN – VOUT) = 3V Reference Voltage (V) @ 10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V Line Regulation (%) @ IOUT = 10mA, 1.5V ≤ (VIN – VOUT) ≤ 15V Load Regulation (%) @ (VIN – VOUT) = 3V, 10mA ≤ IOUT ≤ 1.5A Dropout Voltage (V) @ ∆VREF = 1%, IOUT = 1.5A Current Limit (A) @ (VIN – VOUT) = 5V Current Limit (A) @ (VIN – VOUT) = 25V Minimum Load Current (mA) @ (VIN – VOUT) = 25V Adjust Pin Current (uA) Adjust Pin Current Change (uA) @10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V Appendix D details the test conditions, minimum and maximum values at different accumulated doses. P a g e 4 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 5.0 Test Results All five samples passed the post-irradiation electrical tests. All measurements of the ten listed parameters in section 4.0 are within the specification limits. The used statistics in this report are based on the tolerance limits, which are bounds to gage the quality of the manufactured products. It assumes that if the quality of the items is normally distributed with known mean and known standard deviation, the two-sided tolerance limits can be calculated as follows: +KTL = mean + (KTL) (standard deviation) -KTL = mean - (KTL) (standard deviation) Where +KTL is the upper tolerance limit and -KTL is the lower tolerance limit. These tolerance limits are defined in a table of inverse normal probability distribution. However, in most cases, mean and standard deviations are unknown and therefore it is practical to estimate both of them from a sample. Hence the tolerance limit depends greatly on the sample size. The Ps90%/90% KTL factor for a lot quality P of 0.9, confidence C of 0.9 with a sample size of 5, can be found from the tabulated table (MIL-HDBK-814, page 94, table IX-B). The KTL factor in this report is 2.742. In the plots, the dashed lines with X-markers are the measured data points of five post-irradiated samples. The solid lines with square symbols are the computed KTL values of five post-irradiated samples with the application of the KTL statistics. The orange solid lines with circle markers are the datasheet specification limits. The post-irradiation test limits are using Linear Technology datasheets 100 Krads(Si) specification limits. P a g e 5 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 1.2650 Specification MAX VREF (V) @ VIN - VOUT = 3V, IL = 10mA 1.2600 1.2550 Ps90%/90% (+KTL) Un-biased 1.2500 1.2450 Average Un-biased 1.2400 1.2350 Ps90%/90% (-KTL) Un-biased 1.2300 1.2250 1.2200 1.2150 0.E+00 Specification MIN 5.E+11 Total Fluence 1.E+12 2.E+12 (neutrons/cm2) Figure 5.1 Plot Reference Voltage @ IOUT = 10mA, (VIN – VOUT) = 3V versus Total Fluence P a g e 6 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.1: Raw data table for Reference Voltage @ IOUT = 10mA, (VIN – VOUT) = 3V of pre- and post-irradiation (1E12 N/cm2) Parameter Units 54 55 56 64 66 69 70 VREF @ VIN -VOUT =3V; IL=10mA Total Fluence (neutrons/cm 2) (V) 0 1.E+12 Un-biased Irradiation 1.25186 1.22590 Un-biased Irradiation 1.25504 1.22670 Un-biased Irradiation 1.25605 1.22924 Un-biased Irradiation 1.24980 1.22300 Un-biased Irradiation 1.24991 1.22341 Control Unit 1.24868 1.24845 Control Unit 1.25692 1.25681 Un-biased Irradiation Statistics Average Un-biased 1.25253 1.22565 Std-Dev Un-biased 0.00289 0.00255 Ps90%/90% (+KTL) Un-biased 1.26046 1.23265 Ps90%/90% (-KTL) Un-biased 1.24460 1.21865 Specification MIN 1.238 1.220 Status (Measurements) PASS PASS Specification MAX 1.262 1.262 Status (Measurements) PASS PASS Status (-KTL) Un-biased Status (+KTL) Un-biased PASS PASS FAIL PASS P a g e 7 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 VREF (V) @ 1.5V ≤ VIN - VOUT ≤ 15V,10mA ≤IL ≤1.5A 1.2800 Specification MAX 1.2700 1.2600 Ps90%/90% (+KTL) Un-biased 1.2500 Average Un-biased 1.2400 1.2300 Ps90%/90% (-KTL) Un-biased 1.2200 1.2100 1.2000 0.E+00 Specification MIN 5.E+11 1.E+12 Total Fluence (neutrons/cm2) 2.E+12 Figure 5.2: Plot of versus Reference Voltage @ 10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V versus Total Fluence P a g e 8 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.2: Raw data table for Reference Voltage @ 10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V of pre- and post-irradiation (1E12 N/cm2) Parameter VREF. @ 1.5V to 15V;10mA IL 1.5A Total Fluence (neutrons/cm 2) Units (V) 0 1.E+12 54 Un-biased Irradiation 1.25121 1.22473 55 Un-biased Irradiation 1.25414 1.22526 56 Un-biased Irradiation 1.25513 1.22778 64 Un-biased Irradiation 1.24906 1.22188 66 Un-biased Irradiation 1.24922 1.22221 69 Control Unit 1.24785 1.24768 70 Control Unit 1.25590 1.25593 Un-biased Irradiation Statistics Average Un-biased 1.25175 1.22437 Std-Dev Un-biased 0.00279 0.00242 Ps90%/90% (+KTL) Un-biased 1.25939 1.23100 Ps90%/90% (-KTL) Un-biased 1.24411 1.21774 Specification MIN 1.225 1.210 Status (Measurements) PASS PASS Specification MAX 1.270 1.275 Status (Measurements) PASS PASS Status (-KTL) Un-biased Status (+KTL) Un-biased PASS PASS PASS PASS P a g e 9 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Line Reg (%) @ 1.5V≤ VIN-VOUT ≤ 15V,IL= 15mA 0.3000 0.2500 Specification MAX 0.2000 Ps90%/90% (+KTL) Un-biased 0.1500 0.1000 Average Un-biased 0.0500 Ps90%/90% (-KTL) Un-biased 0.0000 -0.0500 0.E+00 5.E+11 1.E+12 2.E+12 Total Fluence (neutrons/cm2) Figure 5.3: Plot of Line Regulation @ IOUT = 10mA, 1.5V ≤ (VIN – VOUT) ≤ 15V versus Total Fluence P a g e 10 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.3: Raw data table for Line Regulation @ IOUT = 10mA, 1.5V ≤ (VIN – VOUT) ≤ 15V of preand post-irradiation (1E12 N/cm2) Parameter Line Reg @ 1.5V TO 15V; IL =10mA Units (%) 54 Un-biased Irradiation 55 Un-biased Irradiation 56 Un-biased Irradiation 64 Un-biased Irradiation 66 Un-biased Irradiation 69 Control Unit 70 Control Unit Un-biased Irradiation Statistics Average Un-biased Std-Dev Un-biased Ps90%/90% (+KTL) Un-biased Ps90%/90% (-KTL) Un-biased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Un-biased Status (+KTL) Un-biased Total Fluence (neutrons/cm 2) 0 1.E+12 0.00000 0.03120 0.01147 0.02333 0.00076 0.03096 0.00771 0.03432 0.00771 0.02495 0.01344 -0.00153 0.00038 0.00000 0.00553 0.00495 0.01911 -0.00805 0.02895 0.00462 0.04163 0.01627 0.2 PASS PASS 0.25 PASS PASS P a g e 11 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Load Reg (%) @ 3V, 10mA≤ IL ≤ 1.5A 0.3500 0.3000 Specification MAX 0.2500 Ps90%/90% (+KTL) Un-biased 0.2000 0.1500 Average Un-biased 0.1000 0.0500 Ps90%/90% (-KTL) Un-biased 0.0000 0.E+00 5.E+11 Total Fluence 1.E+12 2.E+12 (neutrons/cm2) Figure 5.4: Plot of Load Regulation @ (VIN – VOUT) = 3V, 10mA ≤ IOUT ≤ 1.5A versus Total Fluence P a g e 12 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.4: Raw data table for Load Regulation @ (VIN – VOUT) = 3V, 10mA ≤ IOUT ≤ 1.5A of preand post-irradiation (1E12 N/cm2) Parameter Load Reg @ 3V;IL from 10mA to 1.5A Units (%) 54 Un-biased Irradiation 55 Un-biased Irradiation 56 Un-biased Irradiation 64 Un-biased Irradiation 66 Un-biased Irradiation 69 Control Unit 70 Control Unit Un-biased Irradiation Statistics Average Un-biased Std-Dev Un-biased Ps90%/90% (+KTL) Un-biased Ps90%/90% (-KTL) Un-biased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Un-biased Status (+KTL) Un-biased Total Fluence (neutrons/cm 2) 0 1.E+12 0.04380 0.06067 0.06011 0.07907 0.04715 0.07712 0.04800 0.06261 0.05119 0.06625 0.04720 0.04988 0.06647 0.06450 0.05005 0.00621 0.06707 0.03303 0.06915 0.00844 0.09228 0.04601 0.3 PASS PASS 0.3 PASS PASS P a g e 13 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 1.6000 Dropout Voltage (V) @ IL = 1.5A Specification MAX 1.5000 Ps90%/90% (+KTL) Un-biased 1.4000 1.3000 Average Un-biased 1.2000 Ps90%/90% (-KTL) Un-biased 1.1000 1.0000 0.E+00 5.E+11 1.E+12 2.E+12 Total Fluence (neutrons/cm2) Figure 5.5: Plot of Dropout Voltage @ ∆VREF = 1%, IOUT = 1.5A versus Total Fluence P a g e 14 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.5: Raw data table for Dropout Voltage @ ∆VREF = 1%, IOUT = 1.5A of pre- and postirradiation (1E12 N/cm2) Parameter Dropout Voltage at 1.5A Total Fluence (neutrons/cm 2) Units (V) 0 1.E+12 54 Un-biased Irradiation 1.09636 1.11244 55 Un-biased Irradiation 1.10142 1.11887 56 Un-biased Irradiation 1.10550 1.12360 64 Un-biased Irradiation 1.09505 1.11323 66 Un-biased Irradiation 1.08863 1.10577 69 Control Unit 1.09680 1.10008 70 Control Unit 1.10742 1.10998 Un-biased Irradiation Statistics Average Un-biased 1.09739 1.11478 Std-Dev Un-biased 0.00643 0.00677 Ps90%/90% (+KTL) Un-biased 1.11502 1.13335 Ps90%/90% (-KTL) Un-biased 1.07977 1.09621 Specification MIN Status (Measurements) Specification MAX 1.50 1.55 Status (Measurements) PASS PASS Status (-KTL) Un-biased Status (+KTL) Un-biased PASS PASS P a g e 15 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 2.6000 Current Limit (A) @ VIN - VOUT = 5V Ps90%/90% (+KTL) Un-biased 2.4000 2.2000 Average Un-biased 2.0000 Ps90%/90% (-KTL) Un-biased 1.8000 1.6000 Specification MIN 1.4000 1.2000 1.0000 0.E+00 5.E+11 1.E+12 2.E+12 Total Fluence (neutrons/cm2) Figure 5.6: Plot of Current Limit @ (VIN – VOUT) = 5V versus Total Fluence P a g e 16 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.6: Raw data table for Current Limit @ (VIN – VOUT) = 5V of pre- and post-irradiation (1E12 N/cm2) Parameter Units 54 55 56 64 66 69 70 Current Limit @ VIN - VOUT = 5V Total Fluence (neutrons/cm 2) (A) 0 1.E+12 Un-biased Irradiation 2.27413 2.28915 Un-biased Irradiation 2.07586 2.09228 Un-biased Irradiation 2.04867 2.06558 Un-biased Irradiation 2.27556 2.29695 Un-biased Irradiation 2.23527 2.25298 Control Unit 2.24102 2.23374 Control Unit 2.04885 2.04079 Un-biased Irradiation Statistics Average Un-biased 2.18190 2.19939 Std-Dev Un-biased 0.11082 0.11161 Ps90%/90% (+KTL) Un-biased 2.48576 2.50542 Ps90%/90% (-KTL) Un-biased 1.87804 1.89336 Specification MIN 1.5 1.5 Status (Measurements) PASS PASS Specification MAX Status (Measurements) Status (-KTL) Un-biased Status (+KTL) Un-biased PASS PASS P a g e 17 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Current Limit (A) @ VIN - VOUT = 25V 0.1600 Ps90%/90% (+KTL) Un-biased 0.1400 0.1200 Average Un-biased 0.1000 Ps90%/90% (-KTL) Un-biased 0.0800 0.0600 Specification MIN 0.0400 0.E+00 5.E+11 1.E+12 2.E+12 Total Fluence (neutrons/cm2) Figure 5.7: Plot of Current Limit @ (VIN – VOUT) = 25V versus Total Fluence P a g e 18 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.7: Raw data table for Current Limit @ (VIN – VOUT) = 25V of pre- and post-irradiation (1E12 N/cm2) Parameter Units 54 55 56 64 66 69 70 Current Limit VIN - VOUT = 25V Total Fluence (neutrons/cm 2) (A) 0 1.E+12 Un-biased Irradiation 0.14140 0.14133 Un-biased Irradiation 0.14200 0.14241 Un-biased Irradiation 0.14098 0.14184 Un-biased Irradiation 0.14075 0.14295 Un-biased Irradiation 0.14040 0.14245 Control Unit 0.14118 0.14348 Control Unit 0.14051 0.14229 Un-biased Irradiation Statistics Average Un-biased 0.14111 0.14220 Std-Dev Un-biased 0.00062 0.00062 Ps90%/90% (+KTL) Un-biased 0.14280 0.14391 Ps90%/90% (-KTL) Un-biased 0.13941 0.14049 Specification MIN 0.05 0.047 Status (Measurements) PASS PASS Specification MAX Status (Measurements) Status (-KTL) Un-biased Status (+KTL) Un-biased PASS PASS P a g e 19 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Min. Load Current (mA) @ VIN - VOUT = 25V 12.00 Specification MAX 10.00 8.00 Ps90%/90% (+KTL) Un-biased 6.00 Average Un-biased 4.00 Ps90%/90% (-KTL) Un-biased 2.00 0.00 0.E+00 5.E+11 Total Fluence 1.E+12 2.E+12 (neutrons/cm2) Figure 5.8: Plot of Minimum Load Current @ (VIN – VOUT) = 25V versus Total Fluence P a g e 20 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.8: Raw data table for Minimum Load Current @ (VIN – VOUT) = 25V of pre- and postirradiation (1E12 N/cm2) Parameter Min. Load Current @ VIN-VOUT = 25V Units (mA) 54 Un-biased Irradiation 55 Un-biased Irradiation 56 Un-biased Irradiation 64 Un-biased Irradiation 66 Un-biased Irradiation 69 Control Unit 70 Control Unit Un-biased Irradiation Statistics Average Un-biased Std-Dev Un-biased Ps90%/90% (+KTL) Un-biased Ps90%/90% (-KTL) Un-biased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Un-biased Status (+KTL) Un-biased Total Fluence (neutrons/cm 2) 0 1.E+12 2.86230 2.87291 2.78085 2.79063 2.77740 2.78933 2.82502 2.82364 2.87360 2.86131 2.75930 2.76370 2.77200 2.77476 2.82383 0.04461 2.94616 2.70150 2.82756 0.03885 2.93408 2.72105 10 PASS PASS 10 PASS PASS P a g e 21 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 130.00 120.00 Specification MAX Adjust Pin Current (uA) 110.00 100.00 Ps90%/90% (+KTL) Un-biased 90.00 80.00 70.00 Average Un-biased 60.00 50.00 Ps90%/90% (-KTL) Un-biased 40.00 0.E+00 5.E+11 1.E+12 2.E+12 Total Fluence (neutrons/cm2) Figure 5.9: Plot of versus Adjust Pin Current versus Total Fluence P a g e 22 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.9: Raw data table for Adjust Pin Current of pre- and post-irradiation (1E12 N/cm2) Parameter Adjust Pin Current Total Fluence (neutrons/cm 2) Units (uA) 0 1.E+12 54 Un-biased Irradiation 53.16989 51.46558 55 Un-biased Irradiation 50.52086 48.76309 56 Un-biased Irradiation 50.45754 48.43474 64 Un-biased Irradiation 52.34979 49.97215 66 Un-biased Irradiation 53.11135 51.0384 69 Control Unit 50.82547 50.76115 70 Control Unit 50.17204 50.43983 Un-biased Irradiation Statistics Average Un-biased 51.92189 49.93479 Std-Dev Un-biased 1.34746 1.34031 Ps90%/90% (+KTL) Un-biased 55.61663 53.60992 Ps90%/90% (-KTL) Un-biased 48.22714 46.25967 Specification MIN Status (Measurements) Specification MAX 120 120 Status (Measurements) PASS PASS Status (-KTL) Un-biased Status (+KTL) Un-biased PASS PASS P a g e 23 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Adjust Pin Current Change (uA) @ 1.5V≤ VIN-VOUT≤ 15V 6.000 Specification MAX 5.000 4.000 Ps90%/90% (+KTL) Un-biased 3.000 2.000 Average Un-biased 1.000 0.000 Ps90%/90% (-KTL) Un-biased -1.000 0.E+00 5.E+11 Total Fluence 1.E+12 2.E+12 (neutrons/cm2) Figure 5.10: Plot of Adjust Pin Current Change @10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V versus Total Fluence P a g e 24 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table 5.10: Raw data table for Adjust Pin Current Change @10mA ≤ IOUT ≤ 1.5A, 1.5V ≤ (VIN – VOUT) ≤ 15V of pre- and post-irradiation (1E12 N/cm2) Parameter Delta Adjust Pin I @ IL=10mA to 1.5A Units (uA) 54 Un-biased Irradiation 55 Un-biased Irradiation 56 Un-biased Irradiation 64 Un-biased Irradiation 66 Un-biased Irradiation 69 Control Unit 70 Control Unit Un-biased Irradiation Statistics Average Un-biased Std-Dev Un-biased Ps90%/90% (+KTL) Un-biased Ps90%/90% (-KTL) Un-biased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Un-biased Status (+KTL) Un-biased Total Fluence (neutrons/cm 2) 0 1.E+12 -0.28730 -0.16185 -0.41332 -0.25463 -0.17502 -0.13445 -0.13319 -0.10111 -0.30582 -0.16052 -0.18696 -0.17245 -0.32134 -0.07861 -0.26293 0.11137 0.04244 -0.56830 -0.16251 0.05711 -0.00590 -0.31912 5 PASS PASS 5 PASS PASS P a g e 25 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Appendix A Pictures of one among five samples used in the test. Figure A1: Top View showing date code Figure A2: Bottom View showing serial number P a g e 26 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Appendix B Radiation Bias Connection Table Table B1: Unbias condition Pin Function Connection 1 2 3 Adjust VIN VOUT Float Float Float P a g e 27 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Figure B1: Pin-Out P a g e 28 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Appendix C P a g e 29 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Appendix D Table D1: Electrical Characteristics of Device-Under-Test Pre-Irradiation P a g e 30 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH1086MK W10913024.1 W17 Table D2: Electrical Characteristics of Device-Under-Test Post-Irradiation P a g e 31 | 31 LINEAR TECHNOLOGY CORPORATION