Product Overview MUN5211DW1: Dual NPN Bipolar Digital Transistor (BRT) For complete documentation, see the data sheet Product Description This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Part Electrical Specifications Product Compliance Status Polarity IC Continuo us (A) V(BR)CEO Min (V) hFE Min R1 (kΩ) R2 (kΩ) R1/R2 Typ Vi(off) Max Vi(on) Min (V) (V) Package Type MUN5211DW1T1G AEC Qualified Active Dual NPN 0.1 50 35 10 10 1 0.8 2.5 SC-88-6 / SC-706 / SOT363-6 NEW Dual NPN 0.1 50 35 10 10 1 0.8 2.5 SC-88-6 / SC-706 / SOT363-6 Active Dual NPN 0.1 50 35 10 10 1 0.8 2.5 SC-88-6 / SC-706 / SOT363-6 Active Dual NPN 0.1 50 35 10 10 1 0.8 2.5 SC-88-6 / SC-706 / SOT363-6 Pb-free Halide free NSVMUN5211DW1T2G AEC Qualified PPAP Capable Pb-free Halide free NSVMUN5211DW1T3G AEC Qualified PPAP Capable Pb-free Halide free SMUN5211DW1T1G AEC Qualified PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016