Product Overview BD681: Medium Power NPN Darlington Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type BD681G Pb-free Active NPN 4 100 2.5 0.75 - - Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 TO-225-3