INFINEON BTS5231GS

Da ta She et , V1 .0, Dec. 2 00 5
B T S 52 3 1 G S
Smart High-Side Power Switch
PROFE T
Two Cha nnels, 140 mΩ
Automotive Power
Smart High-Side Power Switch
BTS 5231GS
Table of Contents
Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Pin Assignment BTS 5231GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . .
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
10
10
11
13
15
15
16
16
16
17
18
19
21
22
23
5 Package Outlines BTS 5231GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
2
V1.0, 2005-12-19
Smart High-Side Power Switch
PROFET
BTS 5231GS
Product Summary
P-DSO-14-18
The BTS 5231GS is a dual channel high-side power
switch in P-DSO-14-18 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Vbb(on)
Vbb(AZ)
RDS(ON)
IL(nom)
IL(LIM)
IL(SCr)
Ibb(OFF)
Operating voltage
Over voltage protection
On-State resistance
Nominal load current (one channel active)
Current limitation
Current limitation repetitive
Standby current for whole device with load
4.5 … 28 V
41 V
140 mΩ
1.8 A
8A
3A
2.5 µA
Basic Features
•
•
•
•
•
•
•
Very low standby current
3.3 V and 5 V compatible logic pins
Improved electromagnetic compatibility (EMC)
Stable behaviour at undervoltage
Logic ground independent from load ground
Secure load turn-off while logic ground disconnected
Optimized inverse current capability
Type
Ordering Code
Package
BTS 5231GS
SP000203741
P-DSO-14-18
Data Sheet
3
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Smart High-Side Power Switch
BTS 5231GS
Protective Functions
•
•
•
•
•
•
•
•
•
Reverse battery protection without external components (GND resistor integrated)
Short circuit protection
Overload protection
Multi-step current limitation
Thermal shutdown with restart
Thermal restart at reduced current limitation
Overvoltage protection without external resistor
Loss of ground protection
Electrostatic discharge protection (ESD)
Diagnostic Functions
•
•
•
•
•
•
•
•
Enhanced IntelliSense signal for each channel
Enable function for diagnosis pins (IS1 and IS2)
Proportional load current sense signal by current source
High accuracy of current sense signal at wide load current range
Open load detection in ON-state by load current sense
Over load (current limitation) diagnosis in ON-state, signalling by voltage source
Latched over temperature diagnosis in ON-state, signalling by voltage source
Open load detection in OFF-state, signalling by voltage source
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Overview
1
Overview
The BTS 5231GS is a dual channel high-side power switch (two times 140 mΩ) in
P-DSO-14-18 package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback
signal including current sense function and open load in off state. The diagnosis signals
can be switched on and off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,
SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically
integrated in Smart SIPMOS technology.
1.1
Block Diagram
VBB
channel 1
load current
sense
internal
power
supply
logic
IS1
gate control
&
charge pump
open load
detection
IN1
ESD
protection
temperature
sensor
SEN
clamp for
inductive load
multi step
load current
limitation
OUT1
channel 2
IN2
IS2
control and protection circuit
equivalent to
channel 1
OUT2
RGND
GND
Figure 1
Data Sheet
Block Diagram
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Smart High-Side Power Switch
BTS 5231GS
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb
Ibb
IIN1
IIN2
VIN1
VIN2
IIS1
IIS2
VIS1
VIS2
ISEN
IN1
VBB
IN2
IS1
OUT1
SEN
V DS1
VOUT1
BTS 5231GS
OUT2
IS2
I L1
I L2
V DS2
V OUT2
GND
VSEN
IGND
Terms2ch.emf
Figure 2
Terms
Symbols without channel number are channel related and valid for each channel
separately.
Data Sheet
6
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Pin Configuration
2
Pin Configuration
2.1
Pin Assignment BTS 5231GS
(top view)
Figure 3
VBB
1
14
VBB
GND
2
13
OUT1
IN1
3
12
OUT1
IS1
4
11
OUT2
IS2
5
10
OUT2
IN2
6
9
SEN
VBB
7
8
VBB
Pin Configuration P-DSO-14-18
2.2
Pin Definitions and Functions
Pin
Symbol
I/O
OD
Function
3
IN1
I
Input signal for channel 1
6
IN2
I
Input signal for channel 2
4
IS1
O
Diagnosis output signal channel 1
5
IS2
O
Diagnosis output signal channel 2
9
SEN
I
Sense Enable input for channel 1&2
12, 13
OUT1 1)
O
Protected high-side power output channel 1
10, 11
OUT2 1)
O
Protected high-side power output channel 2
2
GND
–
Ground connection
–
Positive power supply for logic supply as well as
output power supply
1, 7, 8, 14 VBB 2)
1) All output pins of each channel have to be connected
2) All VBB pins have to be connected
Data Sheet
7
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Electrical Characteristics
3
Electrical Characteristics
3.1
Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device.
Exposure to maximum rating conditions for extended periods may affect device
reliability.
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Supply Voltage
Vbb
Vbb(SC)
3.1.1
Supply voltage
3.1.2
Supply voltage for full short
circuit protection (single pulse)
(Tj = -40 °C … 150 °C)
3.1.3
VDS
Supply Voltage for Load Dump Vbb(LD)
3.1.4
-16
28
V
0
20
V
52
V
40
V
Voltage at power transistor
protection
L = 8 µH
R = 0.2 Ω 1)
RI = 2 Ω 2)
RL = 12 Ω
Power Stages
3.1.5
Load current
3.1.6
Maximum energy dissipation
single pulse
3.1.7
Power dissipation (DC)
IL
EAS
IL(LIM) A
0.1
J
3)
4)
IL(0) = 2.1 A
Tj(0) = 150 °C
Ptot
0.9
W
5)
Ta = 85 °C
Tj ≤ 150 °C
Logic Pins
3.1.8
3.1.9
Voltage at input pin
Current through input pin
3.1.10 Voltage at sense enable pin
VIN
-5
-16
10
IIN
-2.0
-8.0
2.0
VSEN
-5
-16
10
-2.0
-8.0
2.0
-25
10
3.1.11 Current through sense enable ISEN
pin
3.1.12 Current through sense pin
Data Sheet
IIS
8
V
t ≤ 2 min
mA
t ≤ 2 min
V
t ≤ 2 min
mA
t ≤ 2 min
mA
–
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Electrical Characteristics
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Temperatures
Tj
3.1.14 Dynamic temperature increase ∆Tj
-40
Tstg
-55
3.1.13 Junction Temperature
150
°C
60
°C
150
°C
while switching
3.1.15 Storage Temperature
ESD Susceptibility
3.1.16 ESD susceptibility HBM
VESD
IN, SEN
IS
OUT
kV
-1
-2
-4
1
2
4
according to
EIA/JESD
22-A 114B
1) R and L describe the complete circuit impedance including line, contact and generator impedances.
2) RI is the internal resistance of the Load Dump pulse generator.
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse.
5) Device mounted on PCB (50 mm × 50 mm × 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
Data Sheet
9
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Block Description and Electrical Characteristics
4
Block Description and Electrical Characteristics
4.1
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1
Output On-State Resistance
The on-state resistance depends on the supply voltage as well as the junction
temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance
RDS(ON). The on-state resistance in reverse polarity mode is described in Section 4.2.2.
240
220
200
180
160
140
120
100
80
60
-50 -25
Tj = 25 °C
240
220
RDS(ON) /mΩ
RDS(ON) /mΩ
Vbb = 13.5 V
4.1.2
180
160
140
120
100
0
25
50
75 100 125 150
0
T /°C
Figure 4
200
5
10
15
Vbb /V
20
25
Typical On-State Resistance
Input Circuit
Figure 5 shows the input circuit of the BTS 5231GS. There is an integrated input resistor
that makes external components obsolet. The current source to ground ensures that the
device switches off in case of open input pin. The zener diode protects the input circuit
against ESD pulses.
IN
RIN
IIN
RGND
GND
Input.emf
Figure 5
Data Sheet
Input Circuit (IN1 and IN2)
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Smart High-Side Power Switch
BTS 5231GS
Block Description and Electrical Characteristics
A high signal at the input pin causes the power DMOS to switch on with a dedicated
slope, which is optimized in terms of EMC emission.
IN
VOUT
tON
tOFF
t
90%
70%
70%
dV /dtON
dV /dtON
30%
30%
10%
t
Figure 6
4.1.3
SwitchOn.emf
Switching a Load (resistive)
Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage VOUT drops below
ground potential, because the inductance intends to continue driving the current.
V bb
VBB
IL
GND
OUT V OUT
L,
RL
OutputClamp .em
Figure 7
Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and
Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.
Data Sheet
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V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Block Description and Electrical Characteristics
V OUT
IN = 5V
IN = 0V
Vbb
t
V OUT(CL)
IL
t
Figure 8
InductiveLoad.emf
Switching an Inductance
Maximum Load Inductance
While demagnization of inductive loads, energy has to be dissipated in the BTS 5231GS.
This energy can be calculated with following equation:
V OUT(CL) 
V bb 
L
- ⋅ ln  1 – ---------------------E = ( V bb – V OUT(CL) ) ⋅ ----------------------  + I L ⋅ -----RL
RL
V OUT(CL) 

(1)
This equation simplifies under the assumption of RL = 0:
V bb 
2 
1
E = --- LIL ⋅  1 – ----------------------
2
V OUT(CL) 

(2)
The energy, which is converted into heat, is limited by the thermal design of the
component. See Figure 9 for the maximum allowed energy dissipation.
Vbb = 12 V
0.5
0.4
0.3
EAS /J
0.2
0.1
0.05
0.04
0.03
0.02
0.01
1
Figure 9
Data Sheet
2
3
IL /A
4
5
Maximum Energy Dissipation Single Pulse, Tj,Start = 150 °C
12
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Block Description and Electrical Characteristics
4.1.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
V
VIN = 4.5 V,
RL = 12 Ω,
VDS < 0.5 V
VIN = 5 V
max.
General
Vbb
4.1.1
Operating voltage
4.1.2
IGND
Operating current
one channel active
two channels active
4.1.3
Standby current for
whole device with
load
4.5
28
mA
2.0
3.8
4.0
8.0
Ibb(OFF)
1.5
µA
VIN = 0 V,
VSEN = 0 V,
Tj = 25 °C
Tj = 85 °C1)
Tj = 150 °C
mΩ
IL = 2.5 A
Tj = 25 °C
Tj = 150 °C
IL < 0.15 A
2.5
2.5
10
Output Characteristics
4.1.4
On-State resistance
per channel
RDS(ON)
4.1.5
Output voltage drop
VDS(NL)
limitation at small load
currents
4.1.6
Nominal load current
per channel
one channel active
two channels active
IL(nom)
4.1.7
Output clamp
4.1.8
Output leakage
current per channel
VOUT(CL)
IL(OFF)
4.1.9
Inverse current
capability
Data Sheet
140
260
40
mV
A
Ta = 85 °C
Tj ≤ 150 °C 2) 3)
IL = 40 mA
VIN = 0 V
1.8
1.3
-16
-IL(inv)
-13
-10
V
0.1
4.0
µA
2
13
A
1)
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Block Description and Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
K/W
1)
K/W
1) 2)
max.
Thermal Resistance
4.1.10 Junction to case
4.1.11 Junction to ambient 2)
one channel active
all channels active
Rthjc
Rthja
48
75
71
Input Characteristics
4.1.12 Input resistance
4.1.13 L-input level
4.1.14 H-input level
4.1.15 Input hysteresis
4.1.16 L-input current
4.1.17 H-input current
RIN
VIN(L)
VIN(H)
∆VIN
IIN(L)
IIN(H)
2.0
3.5
5.5
kΩ
-0.3
1.0
V
2.6
5.7
V
0.25
V
1)
VIN = 0.4 V
VIN = 5 V
3
18
75
µA
10
38
75
µA
250
Timings
4.1.18 Turn-on time to
90% VOUT
tON
80
4.1.19 Turn-off time to
10% VOUT
tOFF
100
4.1.20 slew rate
30% to 70% VOUT
dV/ dtON
0.1
0.3
4.1.21 slew rate
70% to 30% VOUT
-dV/
dtOFF
0.1
0.26
RL = 12 Ω,
Vbb = 13.5 V
250 µs
RL = 12 Ω,
Vbb = 13.5 V
0.5 V/µs RL = 12 Ω,
Vbb = 13.5 V
0.5 V/µs RL = 12 Ω,
Vbb = 13.5 V
µs
1) Not subject to production test, specified by design
2) Device mounted on PCB (50 mm × 50 mm × 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air
3) Not subject to production test, parameters are calculated from RDS(ON) and Rth
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Data Sheet
14
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Protection Functions
4.2
Protection Functions
The device is fully protected by embedded protection functions. Integrated protection
functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are neither designed for continuous nor repetitive operation.
4.2.1
Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to
ground. There are three steps of current limitation which are selected automatically
depending on the voltage VDS across the power DMOS. Please note that the voltage at
the OUT pin is Vbb - VDS. Please refer to following figure for details.
IL
10
8
6
4
2
5
Figure 10
10
15
20
VDS
CurrentLimitation.emf
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to
rapid temperature rise inside. A temperature sensor for each channel causes an
overheated channel to switch off to prevent destruction. After cooling down with thermal
hysteresis, the channel switches on again. Please refer to Figure 11 for details.
IN
t
IL
IL(LIM)
IL(SCr)
tOFF(SC)
t
IIS
t
Figure 11
OverLoad .emf
Shut Down by Over Temperature
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart,
the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM)
by switching off the device (VIN = 0 V).
Data Sheet
15
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Protection Functions
4.2.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional
power is dissipated by the integrated ground resistor. Use following formula for
estimation of total power dissipation Pdiss(rev) in reverse polarity mode.
2
P diss(rev) =
∑
V bb
( V DS(rev) ⋅I L ) + ------------R GND
(3)
The reverse current through the intrinsic body diode has to be limited by the connected
load. The current trough sense pins IS1 and IS2 has to be limited (please refer to
maximum ratings on Page 8). The over-temperature protection is not active during
reverse polarity.
4.2.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is
a clamp mechanism for over voltage protection. Because of the integrated ground
resistor, over voltage protection does not require external components.
As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power
transistor opens and the voltage across logic part is clamped. As a result, the internal
ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin
IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the
connected circuitry.
IN
ZDAZ
RIN
VBB
IS
SEN RSEN
logic
ZDESD
RGND
OUT
V OUT
GND
OverVoltage .emf
Figure 12
4.2.4
Over Voltage Protection
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground,
the BTS 5231GS securely changes to or keeps in off state.
Data Sheet
16
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Protection Functions
4.2.5
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
A
VDS = 7 V
VDS = 14 V
VDS = 28 V 1) 2)
Tj = Tj(SC) 2)
max.
Over Load Protection
4.2.1
Load current limitation IL(LIM)
4.2.2
Repetitive short circuit IL(SCr)
current limitation
4.2.3
Initial short circuit shut tOFF(SC)
down time
4.2.4
Thermal shut down
temperature
Tj(SC)
Thermal hysteresis
∆Tj
4.2.5
8
5
1.6
16
10
6
3
150
A
0.5
ms
170
°C
2)
10
TjStart = 25 °C 2)
Rthja = 40 K/W
K
Reverse Battery
4.2.6
Drain-Source diode
voltage (VOUT > Vbb)
-VDS(rev)
4.2.7
Reverse current
through GND pin
-IGND
700
65
mV
mA
IL = -1.6 A,
Vbb = -13.5 V,
Tj = 150 °C
Vbb = -13.5 V 2)
Ground Circuit
4.2.8
Integrated Resistor in RGND
GND line
115
220
200
350
Ω
350
Ω
Tj < 150 °C
Tj = 150 °C
53
V
Ibb = 2 mA
2
mA
IIN = 0,2) 3)
ISEN = 0,
IIS = 0, IGND = 0
Over Voltage
4.2.9
Overvoltage
protection
Vbb(AZ)
41
47
Loss of GND
4.2.10 Output current while
GND disconnected
IL(GND)
1) Please note, that an external forced VDS must not exceed Vbb + |VOUT(CL)|
2) Not subject to production test, specified by design
3) No connection at these pins
Data Sheet
17
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Diagnosis
4.3
Diagnosis
For diagnosis purpose, the BTS 5231GS provides an Enhanced IntelliSense signal at
pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal
to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see
Table 1) occurs. In case of a failure mode, VIS(fault) is fed to the diagnosis pin.
S OL
VBB
IIS1
IN1
Rlim
ROL
gate control
RIN1
IS1
OUT1
0
latch
1
over temperature
over load
SEN
µC
1
RSEN
V IS(fault)
VOUT(OL)
channel 1
IN2
Rlim
open load @ off
0
gate control
RIN2
IS2
0
RIS1 RIS2
IIS2
diagnosis
1
OUT2
channel 2
GND
load
Sense.emf
Figure 13
Block Diagram: Diagnosis
Table 1
Truth Table 1)
Operation Mode
Input
Level
Output Level
Diagnostic Output
SEN = H
SEN = L
GND
Z
Z
GND
Z
Z
Over-Temperature
Z
Z
Z
Short Circuit to Vbb
Vbb
< VOUT(OL)
> VOUT(OL)
VIS = VIS(fault)
Z
Z
Z
Z
Normal Operation (OFF)
Short Circuit to GND
Open Load
Data Sheet
L
(OFF-State)
18
VIS = VIS(fault)
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Diagnosis
Truth Table (cont’d)1)
Table 1
Operation Mode
Input
Level
Normal Operation (ON)
Output Level
~Vbb
H
(ON-State)
Current Limitation
< Vbb
Short Circuit to GND
~GND
Over-Temperature
Z
Short Circuit to Vbb
Vbb
Vbb
Open Load
Diagnostic Output
SEN = H
SEN = L
IIS = IL / kILIS
VIS = VIS(fault)
VIS = VIS(fault)
VIS = VIS(fault)
IIS < IL / kILIS
Z
Z
Z
Z
Z
Z
Z
1) L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
4.3.1
ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current.
The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to
Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is
recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ
4000
dummy
Tj = 150°C
dummy
Tj = -40°C
3500
3000
kILIS
2500
2000
1500
1000
500
0
0.5
1
1.5
2
2.5
IL /A
Figure 14
Current Sense Ratio kILIS1)
1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Sheet in Section 4.3.4 (Position 4.3.6).
Data Sheet
19
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and
load current IL in ON-state can be found in Figure 15.
normal operation
IN
OFF
V OUT
over load (current limitation)
ON
tON
t
t
IL
IIS
tsIS(ON)
tsIS(LC)
t
tsIS(OVL)
VIS(fault) / RS
t
SwitchOn .emf
Figure 15
Timing of Diagnosis Signal in ON-state
In case of over-load as well as over-temperature, the voltage VIS(fault) is fed to the
diagnosis pins as long as the according input pin is high. This means, even if the
overload disappears after the first thermal shutdown or when the device keeps switching
on and off in over-load condition (thermal toggling), the diagnosis signal (VIS(fault)) is
constantly available. Please refer to Figure 16 for details. Please note, that if the
overload disappears before the first thermal shutdown, the diagnosis signal (VIS(fault)) may
remain for approximately up to 300 µs longer than the duration of the overload.
As a result open load and over load including over temperature can be differentiated in
ON-state.
Consideration must be taken in the selection of the sense resistor in order to distinguish
nominal currents from the overload/short circuit fault state. A potential of 5 V at the sense
pin can be achieved with a big sense resistor even with currents being much smaller than
the current limitation.
Data Sheet
20
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Diagnosis
over load (current limitation)
IN
OFF
over temperature
OFF
ON
IL(LIM)
IL
t
tsIS(OVL)
IIS
VIS(fault) / RS
t
OverLoad.emf
Figure 16
4.3.2
Timing of Diagnosis Signal in Over Load Condition
OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and
load current IL in OFF-state can be found in Figure 17. For open load diagnosis in OFFstate an external output pull-up resistor (ROL) is necessary.
IN
ON
OFF
t
V OUT
pull-up resistor
inactive
Open Load, pull-up resistor active
IIS
td(fault)
ts(fault)
t
VIS(fault) / RS
t
SwitchOff.emf
Figure 17
Timing of Diagnosis Signal in OFF-State
For calculation of the pull-up resistor, just the external leakage current Ileakage and the
open load threshold voltage VOUT(OL) has to be taken into account.
V bb(min) – V OUT(OL,max)
R OL = ---------------------------------------------------I leakage
(4)
Ileakage defines the leakage current in the complete system e.g. caused by humidity.
There is no internal leakage current from out to ground at BTS 5231GS. Vbb(min) is the
minimum supply voltage at which the open load diagnosis in off state must be ensured.
To reduce the stand-by current of the system, an open load resistor switch (SOL) is
recommended.
Data Sheet
21
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Diagnosis
4.3.3
Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN).
See Figure 18 for details on the timing between SEN pin and diagnosis signal IIS. Please
note that the diagnosis is enabled, when no signal is provided at pin SEN.
SEN
IIS
tsIS(SEN)
tdIS(SEN)
tsIS(SEN)
tdIS(SEN)
t
t
Figure 18
SEN.emf
Timing of Sense Enable Signal
The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details.
The resistors Rlim are recommended to limit the current through the sense pins IS1 and
IS2 in case of reverse polarity and over-voltage. Please refer to maximum ratings on
Page 8. The stand-by current of the BTS 5231GS is minimized, when both input pins
(IN1 and IN2) and the sense enable pin (SEN) are on low level.
Data Sheet
22
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Diagnosis
4.3.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
V
VIN = 0 V
VOUT = Vbb
IIS = 1 mA
VIN = 0 V
VOUT = Vbb
max.
General Definition
4.3.1
Diagnostics signal in
failure mode
VIS(fault)
5
4.3.2
Diagnostics signal
current limitation in
failure mode
IIS(LIM)
3
1.6
9
mA
Open Load at OFF-State
4.3.3
Open load detection
threshold voltage
VOUT(OL)
4.3.4
Sense signal invalid
after negative input
slope
4.3.5
Fault signal settling
time
2.8
4.4
V
td(fault)
1.2
ms
VIN = 5 V to 0 V
VOUT = Vbb
ts(fault)
200
µs
VIN = 0 V
VOUT = 0 V to
> VOUT(OL)
IIS = 1 mA
Load Current Sense
4.3.6
Current sense ratio
kILIS
IL = 0.04 A
IL = 0.34 A
IL = 0.6 A
IL = 1.0 A
IL = 2.6 A
IL = 0.04 A
IL = 0.34 A
IL = 0.6 A
IL = 1.0 A
IL = 2.6 A
4.3.7
Current sense voltage VIS(LIM)
limitation
Data Sheet
600
1210
1210
1210
1220
2000
1490
1416
1410
1405
3850
1830
1645
1600
1590
600
1210
1210
1210
1220
1950
1490
1416
1410
1405
3750
1830
1645
1600
1590
5.0
5.9
7.5
23
VIN = 5 V
Tj = -40 °C
Tj = 150 °C
V
IIS = 0.5 mA
IL = 2.6 A
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Diagnosis
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
3.5
µA
1
µA
VIN = 5 V
IL = 0 A
VSEN = 0 V
IL = 2.6 A
4.3.10 Current sense settling tsIS(ON)
time to IIS static ±10%
after positive input
slope
300
µs
4.3.11 Current sense settling tsIS(LC)
time to IIS static ±10%
after change of load
current
50
min.
4.3.8
Current sense
IIS(LH)
leakage/offset current
4.3.9
Current sense
leakage, while
diagnosis disabled
typ.
IIS(dis)
max.
VIN = 0 to 5 V
IL = 1.6 A
1)
µs
VIN = 5 V
IL = 0.6 A to 1
1)
Over Load in ON-State
4.3.12 Over load detection
current
IL(OVL)
IL(LIM) A
4
VIN = 5 V
VIS = VIS(fault)
1)
4.3.13 Sense signal settling
time in overload
condition
tsIS(OVL)
200
µs
5.5
kΩ
VOUT = 2 V
VIN = 0 V to 5 V
Sense Enable
RSEN
L-input level
VSEN(L)
VSEN(H)
H-input level
L-input current
ISEN(L)
H-input current
ISEN(H)
Current sense settling tsIS(SEN)
4.3.14 Input resistance
2.0
4.3.15
-0.3
1.0
V
2.6
5.7
V
4.3.16
4.3.17
4.3.18
4.3.19
3.5
3
18
75
µA
10
38
75
µA
3
25
µs
25
µs
time after positive
SEN slope
4.3.20 Current sense
tdIS(SEN)
deactivation time after
negative SEN slope
VSEN = 0.4 V
VSEN = 5 V
VSEN = 0 V to 5 V
VIN = 0 V
VOUT > VOUT(OL)
VSEN = 5 V to 0 V
IL = 2 A
RS = 5 kΩ 1)
1) Not subject to production test, specified by design
Data Sheet
24
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Package Outlines BTS 5231GS
5
Package Outlines BTS 5231GS
Dimensions in mm
Figure 19
P-DSO-14-18 (Plastic Dual Small Outline Package)
You can find all of our packages, sorts of packing and others in our Infineon Internet Page
“Products”: http://www.infineon.com/products.
Data Sheet
25
V1.0, 2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Revision History
6
Revision History
Version
Date
Changes
V1.0
05-12-19
initial version
•
•
•
•
Data Sheet
26
2005-12-19
Smart High-Side Power Switch
BTS 5231GS
Edition 2005-12-19
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
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and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet
27
2005-12-19
http://www.infineon.com
Published by Infineon Technologies AG