Supertex inc. VN2224 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Part Number VN2224N3-G VN2224N3-G P002 Package Option Product Summary Packing TO-92 1000/Bag TO-92 2000/Reel BVDSS/BVDGS 240V VN2224N3-G P003 VN2224N3-G P005 Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. RDS(ON) ID(ON) (max) (min) 1.25Ω 5.0A Pin Configuration VN2224N3-G P013 VN2224N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55 C to +150 C O Package θja TO-92 132OC/W Doc.# DSFP-VN2224 C082013 TO-92 Product Marking O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance GATE SiVN 2 2 2 4 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 Supertex inc. www.supertex.com VN2224 Thermal Characteristics Package TO-92 (continuous)† ID (pulsed) ID Power Dissipation @TC = 25OC IDR† IDRM 540mA 5.0A 1.0W 540mA 5.0A Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 240 - - V VGS = 0V, ID = 5.0mA VGS(th) Gate threshold voltage 1.0 - 3.0 V VGS = VDS, ID = 5.0mA Change in VGS(th) with temperature - -4.0 -5.0 O mV/ C VGS = VDS, ID = 5.0mA Gate body leakage current - 1.0 100 nA VGS = ±20V, VDS = 0V - - 50 µA VGS = 0V, VDS = Max Rating - - 5.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC 2.0 - - 5.0 10 - - 1.0 1.5 - 0.9 1.25 - 1.0 1.4 %/ C VGS = 10V, ID = 2.0A 1000 2200 - mmho VDS = 25V, ID = 2.0A ΔVGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) ΔRDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transconductance CISS Input capacitance - 300 350 COSS Common Source output capacitance - 85 150 CRSS Reverse transfer capacitance - 20 35 td(ON) Turn-on delay time - 6.0 15 td(OFF) Turn-off delay time - 65 90 tr Rise time - 16 25 tf Fall time - 30 60 Diode forward voltage drop - 0.8 Reverse recovery time - 500 VSD trr A Ω O Conditions VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 2.0A VGS = 10V, ID = 2.0A pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 2.0A, RGEN = 10Ω 1.0 V VGS = 0V, ISD = 100mA - ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-VN2224 C082013 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com VN2224 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 5.0 1.1 VGS = 5.0V RDS(ON) (ohms) BVDSS (normalized) 4.0 1.0 3.0 2.0 VGS = 10V 1.0 0.9 0 50 100 0 150 0 2.0 4.0 1.4 VDS = 25OC 25OC TA = -55OC 125OC 4.0 2.0 2.0 4.0 6.0 8.0 1.0 1.6 0.8 1.2 0.8 RDS(ON) @ 10V, 2.0A 0.4 -50 10 VGS (volts) 0 50 Gate Drive Dynamic Characteristics f = 1.0MHz VDS = 10V 8.0 CISS VGS (volts) C (picofarads) 300 200 100 COSS VDS = 40V 6.0 733 pF 4.0 2.0 300 pF CRSS 0 10 20 0.4 150 10 400 30 0 40 0 2.0 4.0 6.0 8.0 10 QG (nanocoulombs) VDS (volt) Doc.# DSFP-VN2224 C082013 100 Tj (OC) Capacitance vs. Drain-to-Source Voltage 0 2.0 VGS(th) @ 5.0mA 0.6 0 0 10 2.4 1.2 VGS(th) (normalized) ID (amperes) 8.0 6.0 8.0 VGS and RVDS Variation with Temperature Transfer Characteristics 10 6.0 ID (amperes) Tj ( C) O RDS(ON) (normalized) -50 3 Supertex inc. www.supertex.com VN2224 Typical Performance Curves (cont.) Output Characteristics 10 6V 8 Saturation Characteristics 10 VGS = 10V 8V 8 VGS = 10V 8V 6V 4V 4 2 0 ID (amperes) ID (amperes) 6 10 20 30 40 4V 4 2 3V 0 6 0 50 3V 0 2 4 VDS (volts) 8 10 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 5 6 VDS (volts) 2.0 VDS = 25V TA = -55OC 3 PD (watts) GFS (siemens) 4 2 TO-92 1.0 TA = 25OC 1 TA = 125OC 0 0 5 0 10 0 25 50 ID (amperes) Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 ID (amperes) 1 0.1 TO-92 (DC) 0.01 0.001 TC = 25OC 1 10 100 125 150 100 Thermal Response Characteristics 0.8 0.6 0.4 1000 TO-92 0.2 TC = 25OC PD = 1.0W 0 0.001 0.01 0.1 1 10 tP (seconds) VDS (volts) Doc.# DSFP-VN2224 C082013 75 TC(OC) 4 Supertex inc. www.supertex.com VN2224 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN2224 C082013 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com