Data Sheet, V1.0, January 2004 BTS 5434G Smart High-Side Power Switch PROFET Four Channels, 60 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5434G Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1 Pin Assignment BTS 5434G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .11 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5 Package Outlines BTS 5434G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 Data Sheet 2 V1.0, 2004-01-23 Smart High-Side Power Switch PROFET BTS 5434G Product Summary P-DSO-28-19 The BTS 5434G is a four channel high-side power switch in P-DSO-28-19 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Operating voltage Vbb(on) 4.5 .. 28 V Over voltage protection Vbb(AZ) RDS(ON) 41 V 3.4 A 23 A Current limitation repetitive IL(nom) IL(LIM) IL(SCr) Standby current for whole device with load Ibb(OFF) 5 µA On-State resistance Nominal load current (one channel active) Current limitation 60 mΩ 6A Basic Features • • • • • • • Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behavior at under voltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability Type Ordering Code Package BTS 5434G Q67060-S6157 P-DSO-28-19 Data Sheet 3 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Protective Functions • • • • • • • • • Reverse battery protection without external components Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Over voltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD) Diagnostic Functions • • • • • • • Enhanced IntelliSense signal for each channel Enable function for diagnosis pins (IS1 .. IS4) Proportional load current sense signal by current source High accuracy of current sense signal at wide load current range Open load detection in ON-state by load current sense Open load detection in OFF-state by voltage source Feedback on over temperature and current limitation in ON-state Applications • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads • All types of resistive, inductive and capacitive loads • Suitable for loads with high inrush currents, so as lamps • Suitable for loads with low currents, so as LEDs • Replaces electromechanical relays, fuses and discrete circuits Data Sheet 4 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Overview 1 Overview The BTS 5434G is a four channel high-side power switch (four times 60 mΩ) in P-DSO-28-19 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 to IS4 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. The diagnosis signals can be switched on and off by the sense enable pins SENA and SENB. Integrated ground resistors as well as integrated resistors at each input pin (IN1, IN2, IN3, IN4, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is built by two dual channel chips, monolithically integrated in Smart SIPMOS technology. 1.1 Block Diagram VBB channel 1,2 (Chip A) load current sense internal power supply IN1 IN2 IS1 IS2 SENA IN3 IN4 IS3 IS4 SENB logic gate control & charge pump open load detection ESD protection clamp for inductive load multi step load current limitation OUT1 temperature sensor channel 3,4 (Chip B) control and protection circuit equivalent to channel 1,2 OUT4 OUT3 RGND RGND GNDA Figure 1 Data Sheet OUT2 GNDB Block Diagram 5 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Overview 1.2 Terms Following figure shows all terms used in this data sheet. Vbb Ibb IIN1 IIN2 V IN1 IIS1 VIN2 IIS2 V IS1 ISENA VIS2 VSENA IIN3 IIN4 VIN3 IIS3 VIN4 IIS4 V IS3 VIS4 ISENB V SENB VBB IN1 IN2 IS1 OUT1 BTS 5434G OUT2 IS2 I L1 VDS1 I L2 VOUT1 V DS2 V OUT2 SENA Chip A IN3 IN4 OUT3 IS3 OUT4 IS4 I L3 VDS3 I L4 VOUT3 V DS4 V OUT4 SENB Chip B GNDA GNDB IGND Terms4ch.emf Figure 2 Data Sheet Terms 6 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Pin Configuration 2 Pin Configuration 2.1 Pin Assignment BTS 5434G (top view) Figure 3 VBB 1 28 VBB GNDA 2 27 OUT1 IN1 3 26 OUT1 IS1 4 25 OUT1 IS2 5 24 OUT2 IN2 6 23 OUT2 SENA 7 22 OUT2 GNDB 8 21 OUT3 IN3 9 20 OUT3 IS3 10 19 OUT3 IS4 11 18 OUT4 IN4 12 17 OUT4 SENB 13 16 OUT4 VBB 14 15 VBB Pin Configuration P-DSO-28-19 2.2 Pin Definitions and Functions Pin Symbol I/O OD Function 3 IN1 I Input signal for channel 1 6 IN2 I Input signal for channel 2 9 IN3 I Input signal for channel 3 12 IN4 I Input signal for channel 4 4 IS1 O Diagnosis output signal channel 1 5 IS2 O Diagnosis output signal channel 2 10 IS3 O Diagnosis output signal channel 3 11 IS4 O Diagnosis output signal channel 4 Data Sheet 7 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Pin Configuration Pin Symbol I/O OD Function 7 SENA I Sense Enable input for channel 1&2 13 SENB I Sense Enable input for channel 3&4 25, 26, 27 OUT1 O Protected high-side power output channel 1 22, 23, 24 OUT2 O Protected high-side power output channel 2 19, 20, 21 OUT3 O Protected high-side power output channel 3 16, 17, 18 OUT4 O Protected high-side power output channel 4 2 GNDA - Ground connection chip A 8 GNDB - Ground connection chip B 1, 14, 15, 28 VBB - Positive power supply for logic supply as well as output power supply Data Sheet 8 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Electrical Characteristics 3 Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. Unless otherwise specified: Tj = 25 °C Pos. Parameter Symbol Limit Values min. Unit Test Conditions max. Supply Voltage -16 28 V Supply voltage for full short Vbb(SC) circuit protection (single pulse) (Tj(0) = -40°C .. 150°C) 0 28 V VDS Supply Voltage for Load Dump Vbb(LD) - 52 V 41 V 3.1.1 Supply voltage 3.1.2 3.1.3 3.1.4 Vbb Voltage at power transistor protection L = 8 µH, R = 0.2 Ω 1) RI = 2 Ω 2) RL = 6.8 Ω Power Stages 3.1.5 Load current 3.1.6 Maximum energy dissipation single pulse 3.1.7 Power dissipation (DC) IL(LIM) A - 3) IL EAS - 0.58 J IL(0) = 2 A 4) Tj(0) = 150°C Ptot - 1.7 W Ta = 85 °C 5) Tj ≤ 150 °C VIN -5 -16 10 V IIN -2.0 -8.0 2.0 VSEN -5 -16 10 -2.0 -8.0 2.0 -25 10 Logic Pins 3.1.8 3.1.9 Voltage at input pin Current through input pin 3.1.10 Voltage at sense enable pin 3.1.11 Current through sense enable ISEN pin 3.1.12 Current through sense pin Data Sheet IIS 9 t ≤ 2 min mA t ≤ 2 min V t ≤ 2 min mA t ≤ 2 min mA V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Electrical Characteristics Unless otherwise specified: Tj = 25 °C Pos. Parameter Symbol Limit Values min. Unit Test Conditions max. Temperatures Tj 3.1.14 Dynamic temperature increase ∆Tj 3.1.13 Junction Temperature -40 150 °C - 60 °C -55 150 °C while switching 3.1.15 Storage Temperature Tstg ESD Susceptibility VESD 3.1.16 ESD susceptibility HBM IN, SEN IS OUT kV -1 -2 -4 1 2 4 according to EIA/JESD 22-A 114B 1) R and L describe the complete circuit impedance including line, contact and generator impedances 2) Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpeak); 0 < t < tpeak 5) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Data Sheet 10 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Block Description and Electrical Characteristics 4 Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described in Section 4.2.2. Tj = 25°C 90 160 80 140 RDS(ON) /mΩ RDS(ON) /mΩ Vbb = 13.5 V 70 60 50 120 100 80 40 60 30 40 -50 -25 0 25 50 75 100 125 150 0 T /°C Figure 4 4.1.2 5 10 15 Vbb /V 20 25 Typical On-State Resistance Input Circuit Figure 5 shows the input circuit of the BTS 5434G. There is an integrated input resistor that makes external components obsolete. The current sink to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. IN RIN IIN RGND GND Input.emf Figure 5 Data Sheet Input Circuit (IN1 .. IN4) 11 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. IN VOUT tON tOFF t 90% 70% 70% dV /dtON dV /dtOFF 30% 30% 10% t Figure 6 4.1.3 SwitchOn.emf Switching a Load (resistive) Inductive Output Clamp When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. V bb VBB IL GND OUT V OUT L, RL OutputClamp.emf Figure 7 Output Clamp (OUT1 .. OUT4) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. Data Sheet 12 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Block Description and Electrical Characteristics V OUT IN = 5V IN = 0V Vbb 0 t V OUT(CL) IL t Figure 8 InductiveLoad.emf Switching an Inductance Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS 5434G. This energy can be calculated with following equation: V OUT(CL) RL ⋅ IL L - ⋅ ln 1 + ------------------------E = ( V bb + V OUT(CL) ) ⋅ ------------------------- + I L ⋅ -----RL RL V OUT(CL) Following equation simplifies under the assumption of RL = 0: V bb 2 1 E = --- LI L ⋅ 1 + ------------------------- 2 V OUT(CL) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation. Vbb = 12 V 0.6 0.5 0.4 EAS /J 0.3 0.2 0.1 0.05 0.04 2 Figure 9 Data Sheet 3 4 5 6 I /A 7 8 9 10 Maximum energy dissipation single pulse, Tj,Start = 150°C 13 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Block Description and Electrical Characteristics 4.1.4 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions V VIN = 4.5 V RL = 12 Ω VDS < 0.5 V VIN = 5 V max. General Vbb 4.1.1 Operating voltage 4.1.2 Operating current IGND one channel active all channels active 4.1.3 Standby current for whole device with load 4.5 28 mA 1.8 7.2 4 16 Ibb(OFF) 3 µA VIN = 0 V VSEN = 0 V Tj = 25°C Tj = 85°C1) Tj = 150°C mΩ IL = 2.5 A Tj = 25 °C Tj = 150 °C IL < 0.25 A 5 5 30 Output characteristics 4.1.4 On-State resistance per channel RDS(ON) 45 90 4.1.5 Output voltage drop VDS(NL) limitation at small load currents 4.1.6 Nominal load current IL(nom) per channel one channel active four channels active 4.1.7 Output clamp 4.1.8 Output leakage current per channel 4.1.9 Inverse current capability Data Sheet VOUT(CL) IL(OFF) 60 115 40 mV A Ta = 85 °C Tj ≤ 150 °C 2) 3) IL = 40 mA VIN = 0 V 3.4 1.9 -16 -IL(inv) -13 -10 V 0.1 6 µA 3 14 A 1) V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Block Description and Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions K/W - 1) K/W - 1)2) max. Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel active all channels active Rthjc Rthja - 30 - 44 38 1.8 3.5 Input characteristics 4.1.12 Input resistor 4.1.13 L-input level 4.1.14 H-input level 4.1.15 L-input current 4.1.16 H-input current RIN VIN(L) VIN(H) IIN(L) IIN(H) 5.5 kΩ -0.3 1.0 V 2.5 5.7 V 3 18 75 µA 10 38 75 µA VIN = 0.4 V VIN = 5 V Timings 4.1.17 Turn-on time to 90% Vbb tON 100 250 µs 4.1.18 Turn-off time to 10% Vbb tOFF 120 250 µs 4.1.19 slew rate 30% to 70% Vbb dV/ dtON 0.1 0.25 0.5 V/µs 4.1.20 slew rate 70% to 30% Vbb -dV/ dtOFF 0.1 0.25 0.5 V/µs RL = 12 Ω Vbb = 13.5 V RL = 12 Ω Vbb = 13.5 V RL = 12 Ω Vbb = 13.5 V RL = 12 Ω Vbb = 13.5 V 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Data Sheet 15 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G 4.2 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 4.2.1 Over Load Protection The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. IL 25 20 15 10 5 5 Figure 10 10 15 20 VDS CurrentLimitation.emf Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. IN t IL IL(LIM) IL(SCr) tOFF(SC) t IIS t Figure 11 OverLoad .emf Shut Down by Over Temperature with Current Limitation In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V). Data Sheet 16 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G 4.2.2 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. 2 P diss(rev) V bb -------------( V ⋅ I ) 2 = + DS(rev) L ∑ R GND all channels The reverse current through the intrinsic body diode has to be limited by the connected load. The current through sense pins IS1 to IS4 has to be limited (please refer to maximum ratings on Page 9). The current through the ground pin (GND) is limited internally by RGND. The over-temperature protection is not active during reverse polarity. 4.2.3 Over Voltage Protection In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches on and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. IN ZDAZ RIN VBB IS SEN RSEN logic ZDESD internal ground RGND OUT V OUT GND OverVoltage .emf Figure 12 4.2.4 Over Voltage Protection Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS 5434G securely changes to or keeps in off state. Data Sheet 17 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G 4.2.5 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C , typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. Unit Test Conditions A VDS = 7 V VDS = 14 V Tj = Tj(SC) 1) 0.5 ms TjStart = 25 °C 1) 170 °C - K -1) mV IL = -3.5 A Vbb = -13.5 V Tj = 150°C Vbb = -13.5 V 1) typ. max. Over Load Protection 4.2.1 Load current limitation IL(LIM) 4.2.2 Repetitive short circuit IL(SCr) current limitation 4.2.3 Initial short circuit shut tOFF(SC) down time 4.2.4 Thermal shut down temperature Tj(SC) Thermal hysteresis ∆Tj 4.2.5 23 42 A 14 28 A 6 150 1) 7 Reverse Battery 4.2.6 Drain-Source diode voltage (VOUT > Vbb) -VDS(rev) 4.2.7 Reverse current through each GND pin -IGND 900 65 mA Ground Circuit 4.2.8 Integrated Resistors in GND lines RGND 115 220 350 Ω Vbb(AZ) 41 47 53 V Ibb = 4 mA 1 mA IIN = 0, ISEN = 0, IIS = 0, IGND = 0 1) 2) Over Voltage 4.2.9 Over voltage protection Loss of GND 4.2.10 Output leakage current while GND disconnected IL(GND) 1) Not subject to production test, specified by design 2) no connection at these pins Data Sheet 18 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G 4.3 Diagnosis For diagnosis purpose, the BTS 5434G provides an Enhanced IntelliSense signal at pins IS1 to IS4. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided in ON-state as long as no failure mode occurs. In case of open load in OFF-state, the voltage VIS(fault) is fed to the diagnosis pin. S OL VBB IIS1 IN1 Rlim ROL gate control RIN1 IS1 0 1 1 0 OUT1 0 V IS(fault) 1 SEN µC VOUT(OL) RSEN channel 1 IN2 Rlim gate control RIN2 IS2 0 RIS1 RIS2 IIS2 diagnosis 1 OUT2 channel 2 GND load Diagnosis equivalent for channel 3 and 4 Figure 13 Block Diagram: Diagnosis Table 1 Truth Table Operation Mode Normal Operation (OFF) Input Level Output Level Diagnostic Output SEN = H SEN = L Z Z Z Short Circuit to GND Z Z Z Over Temperature Z Z Z Short Circuit to Vbb Vbb VIS = VIS(fault) Z < VOUT(OL) > VOUT(OL) Z Z Z Open Load Data Sheet L Sense.emf 19 VIS = VIS(fault) V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Table 1 Truth Table Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L ~Vbb IIS = IL / kILIS Z Current Limitation < Vbb Z Z Short Circuit to GND << Vbb Z Z Over Temperature Z Z Z Short Circuit to Vbb Vbb ~Vbb IIS < IL / kILIS Z Z Z Normal Operation (ON) H Open Load L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit 4.3.1 ON-State Diagnosis The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to following Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ. 8000 dummy Tj = 150°C dummy Tj = -40°C 7000 6000 kILIS 5000 4000 3000 2000 1000 0 Figure 14 1) 0.5 1 1.5 2 IL /A 2.5 3 3.5 4 Current sense ratio kILIS1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.4 (Position 4.3.6). Data Sheet 20 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G In case of over current as well as over temperature, the current sense signal is switched off. As a result, one threshold is enough to distinguish between normal and faulty operation. Open load and over load can be differentiated by switching off the channel and using open load detection in off-state. Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in ON-state can be found in Figure 15. IN OFF ON t tON V OUT t IL tsIS(ON) IIS t tsIS(LC) t SwitchOn .emf Figure 15 4.3.2 Timing of Diagnosis Signal in ON-state OFF-State Diagnosis Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in OFF-state can be found in Figure 16. IN ON V OUT OFF t tOFF Open Load t IL IIS td(fault) t ts(fault) V IS(fault) / RS t SwitchOff.emf Figure 16 Data Sheet Timing of Diagnosis Signal in OFF-state 21 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G For open load diagnosis in off state an external output pull-up resistor (ROL) is recommended. For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. V bb(min) – V OUT(OL,max) R OL = ---------------------------------------------------------I leakage Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS 5434G. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. 4.3.3 Sense Enable Function The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal is provided at pin SEN. SEN IIS tsIS(SEN) tdIS(SEN) tsIS(SEN) tdIS(SEN) t t Figure 17 SEN.emf Timing of Sense Enable Signal The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 to IS4 in case of reverse polarity and over voltage. Please refer to maximum ratings on Page 9. The stand-by current of the BTS 5434G is minimized, when both input pins (IN1 and IN2 or IN3 and IN4) and the according sense enable pin (SENA or SENB) are on low level. Data Sheet 22 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G 4.3.4 Electrical Characteristics Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit min. typ. max. 2.8 4.4 V 6.5 V Test Conditions Open Load at OFF-State 4.3.1 Open load detection threshold voltage VOUT(OL) 1.6 4.3.2 Sense signal in case of open load VIS(fault) 3.5 4.3.3 Sense signal current limitation IIS(LIM) 2 4.3.4 Sense signal invalid after negative input slope td(fault) 1.2 ms 4.3.5 Fault signal settling time ts(fault) 200 µs mA VIN = 0 V VOUT = Vbb IIS = 1 mA VIN = 0 V VOUT = Vbb VIN = 5 V to 0 V VOUT = Vbb VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA Load Current Sense ON-State 4.3.6 Current sense ratio kILIS IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A IL = 40 mA IL = 1.3 A IL = 2.2 A IL = 4.0 A 4.3.7 Current sense voltage VIS(LIM) limitation 4.3.8 IIS(LH) Current sense leakage/offset current Data Sheet VIN = 5 V Tj = -40 °C 1000 2300 2410 2465 4035 3050 2920 2850 8000 3580 3380 3275 1400 2465 2520 2580 3410 2920 2875 2870 6000 3275 3220 3160 5.0 6.2 7.5 V 5 µA 23 Tj = 150 °C IIS = 0.5 mA IL = 3.5 A VIN = 5 V IL = 0 A V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Unless otherwise specified: Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions 2 µA VSEN = 0 V IL = 3.5 A 4.3.10 Current sense settling tsIS(ON) time to IIS static ±10% after positive input slope 300 µs VIN = 0 V to 5 V IL = 3.5 A 4.3.11 Current sense settling tsIS(LC) time to IIS static ±10% after change of load current 50 min. 4.3.9 Current sense leakage, while diagnosis disabled typ. IIS(dis) max. 1) µs VIN = 5 V IL = 1.3 A to 2.2 A 1) Sense Enable RSEN L-input level VSEN(L) H-input level VSEN(H) ISEN(L) L-input current H-input current ISEN(H) Current sense settling tsIS(SEN) 4.3.12 Input resistance 1.8 4.3.13 4.3.14 4.3.15 4.3.16 4.3.17 3.5 5.5 kΩ -0.3 1.0 V 2.5 5.7 V 3 18 75 µA 10 38 75 µA 3 25 µs 25 µs time 4.3.18 Current sense deactivation time 1) tdIS(SEN) VSEN = 0.4 V VSEN = 5 V VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL) VSEN = 5 V to 0 V IL = 3.5 A RS = 5 kΩ 1) Not subject to production test, specified by design Data Sheet 24 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Package Outlines BTS 5434G 5 Package Outlines BTS 5434G x 8˚ ma 7.6 -0.2 1) +0.09 0.35 x 45˚ 0.23 2.65 max 2.45 -0.2 0.2 -0.1 P-DSO-28-19 (Plastic Dual Small Outline Package) 0.4 +0.8 1.27 0.35 +0.15 2) 0.1 0.2 28x 28 1 10.3 ±0.3 15 18.1 -0.4 1) 14 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side GPS05123 You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm SMD = Surface Mounted Device Data Sheet 25 V1.0, 2004-01-23 Smart High-Side Power Switch BTS 5434G Revision History 6 Revision History Version Date Changes V1.0 04-01-23 initial version Data Sheet 26 2004-01-23 Smart High-Side Power Switch BTS 5434G Edition 2004-01-23 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 1/31/04. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 27 2004-01-23 http://www.infineon.com Published by Infineon Technologies AG