DG9411 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 9 ns, tOFF: 5 ns), low on-resistance (rDS(on): 7 Ω) and small physical size (SC70), the DG9411 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. • • • • • • • The DG9411 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before make is guaranteed for DG9411. BENEFITS Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. • • • • Low voltage operation (2.25 V to 5.5 V) Low on-resistance - rDS(on): 7 Ω Fast switching - tON: 9 ns, tOFF: 5 ns Low charge injection - QINJ: 5 pC Low power consumption TTL/CMOS compatible 6-Pin SC70 package Pb-free Available RoHS* COMPLIANT Reduced power consumption Simple logic interface High accuracy Reduce board space APPLICATIONS • • • • • Cellular phones Communication systems Portable test equipment Battery operated systems Sample and hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE SC-70 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Logic NC NO 0 ON OFF 1 OFF ON Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V Top View ORDERING INFORMATION Device Marking 4Dx or 4Dxy Temp Range Package - 40 to 85 °C SC70-6 Part Number DG9411DL-T1 DG9411DL-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71347 S-72609-Rev. D, 24-Dec-07 www.vishay.com 1 DG9411 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Reference V+ to GND Limit - 0.3 to + 6 IN, COM, NC, NOa Continuous Current (Any Terminal) V - 0.3 to (V+ + 0.3) ± 50 Peak Current (Pulsed at 1 ms, 10 % duty cycle) b mA ± 200 Storage Temperature Power Dissipation (Packages) Unit 6-Pin SC70 c - 65 to 150 °C 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/°C above 70 °C. SPECIFICATIONS V+ = 2.5 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 2.5 V, ± 10 % VIN = 0.4 or 2.0 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd rDS(on) V+ = 2.25 V, VD = 1.0 V, IS = 10 mA Room Fulld 26 29 rDS(on) Flatness V+ = 2.5 V Room 10 IS(off) Switch Off Leakage Currentf V+ = 2.75 V, VS = 0.5 V/1.5 V, VD = 1.5 V/0.5 V ID(off) Channel-On Leakage Currentf ID(on) V+ = 2.75 V, VS = VD = 0.5 V/1.5 V 35 40 Ω Room Fulld - 250 - 3.0 250 3.0 pA nA Room Fulld - 250 - 3.0 250 3.0 pA nA Room Fulld - 250 - 3.0 250 3.0 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Cin IINL or IINH Input Current 0.4 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced CL = 1 nF, VGEN = 0 V, VS = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz CS(off) Capacitanced CD(on) d Drain-to-Source Capacitance 16 40 45 Room Full 7 23 28 ns 10 pC Roomd td Break-Before-Make Time Channel-On VD or VS = 1.5 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 Room Fulld VIN = 0 or V+, f = 1 MHz CDS(off) 1 12 Room 5 Room - 73 Room - 70 Room 7 Room 20 Room 20 dB pF Power Supply Power Supply Range V+ d Power Supply Current I+ Power Consumption PC www.vishay.com 2 2.25 VIN = 0 or V+ 2.75 0.01 V 1.0 µA 0.3 µW Document Number: 71347 S-72609-Rev. D, 24-Dec-07 DG9411 Vishay Siliconix SPECIFICATIONS V+ = 3 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, ± 10 % VIN = 0.4 or 2.0 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VNO, VNC VCOM Drain-Source On-Resistanced rDS(on) V+ = 2.7 V, VD = 1.5 V, IS = 10 mA Room Full 15 19 rDS(on) Flatnessd rDS(on) Flatness VS = 0 to V+, IS = 10 mA Room 7.5 Switch Off Leakage Currentf Channel-On Leakage Currentf IS(off) V+ = 3.3 V, VS = 1 V/3 V, VD = 3 V/1 V ID(off) ID(on) V+ = 3.3 V, VS = VD = 1 V/3 V 25 30 Ω Room Full - 500 - 4.0 500 4.0 pA nA Room Full - 500 - 4.0 500 4.0 pA nA Room Full - 500 - 4.0 500 4.0 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Cin Input Current IINL or IINH 0.8 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed VD or VS = 2.0 V, RL = 300 Ω, CL = 35 pF Figures1 and 2 td Room Full 12 15 20 Room Full 6 8 10 ns 10 pC Room CL = 1 nF, VGEN = 0 V, VS = 0 V, RGEN = 0 Ω, Figure 3 1 7 Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced CS(off) Room 7 Channel-On Capacitanced CD(on) Room 20 Drain-to-Source Capacitanced CDS(off) Room 20 RL = 50 Ω, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz Room 5 Room - 73 Room - 70 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC Document Number: 71347 S-72609-Rev. D, 24-Dec-07 2.7 VIN = 0 or V+ 0.01 3.3 V 1.0 µA 0.4 µW www.vishay.com 3 DG9411 Vishay Siliconix SPECIFICATIONS V+ = 5 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 % VIN = 0.8 or 2.4 Ve Limits - 40 to 85 °C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch VNO, VNC VCOM Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd rDS(on) V+ = 4.5 V, VD = 3 V, IS = 10 mA Room Full 7 10 rDS(on) Flatness V+ = 2.5 V Room 2 IS(off) Switch Off Leakage Current V+ = 5.5 V, VS = 1 V/4.5 V, VD = 4.5 V/1 V ID(off) Channel-On Leakage Current ID(on) V+ = 5.5 V, VS = VD = 1 V/4.5 V 12 16 Room Full - 1.0 - 4.0 1.0 4.0 Room Full - 1.0 - 4.0 1.0 4.0 Room Full - 1.0 - 3.0 1.0 4.5 2.4 Ω nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin IINL or IINH Input Current 0.8 Full VIN = 0 or V+ Full 3 -1 V pF 1 µA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed td Charge Injectiond QINJ Off-Isolationd OIRR d XTALK Crosstalk Source-Off Capacitanced Channel-On Capacitance Drain-to-Source Capacitanced VD or VS = 3 V, RL = 300 Ω, CL = 35 pF Figure 1 and 2 CD(on) 9 11 15 Room Full 5 7 9 ns 10 pC Room CL = 1 nF, VS = 0 V, VGEN = 0 V, RGEN = 0 Ω, Figure 3 RL = 50 Ω, CL = 5 pF, f = 1 MHz CS(off) d Room Full VIN = 0 or V+, f = 1 MHz CDS(off) 1 4 Room 5 Room - 73 Room - 70 Room 7 Room 20 Room 20 dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC 4.5 VIN = 0 or V+ 0.01 5.5 V 1.0 µA 0.6 µW Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 71347 S-72609-Rev. D, 24-Dec-07 DG9411 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 rDS(on) - Drain-Source On-Resistance (Ω) 30 25 V+ = 2.5 V 20 15 V+ = 3 V 10 rDS(on) - V+ = 5 V 5 V+ = 2.5 V 25 20 85 °C 15 85 °C 10 5 40 °C 25 °C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VD - Analog Voltage (V) VD - Analog Voltage (V) rDS(on) vs. Analog Voltage and Temperature rDS(on) vs. Analog and Power Voltage 100 10 mA V+ = 5 V VIN = 0 V 1 mA 10 I+ - Supply Current (nA) I+ - Supply Current (nA) 25 °C 40 °C V+ = 5 V 1 0.1 100 µA 10 µA 1 µA 100 pA 10 pA 1 pA 0.01 - 60 - 40 - 20 0 20 40 60 80 1 100 120 140 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Temperature (°C) Supply Current vs. Input Switching Frequency Supply Current vs. Temperature 100 100 K V+ = 5 V V+ = 5 V VD, V S = 5 V ID(off) 1K Leakage Current (pA) Leakage Current (pA) 10 K 0 ID(on) 100 - 100 ID(off) IS(off) - 200 ID(on) - 300 - 400 10 - 500 1 - 600 - 50 - 25 0 25 50 75 100 125 Temperature (°C) Leakage Current vs. Temperature Document Number: 71347 S-72609-Rev. D, 24-Dec-07 150 0 1 2 3 4 5 6 VD, V S - Analog Voltage (V) Leakage vs. Analog Voltage www.vishay.com 5 DG9411 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 100 Off Isolation 25 °C 20 80 85 °C 15 OIRR, XTALK (dB) tON, tOFF - Switching Time (nS) tON 40 °C tOFF 25 °C 10 85 °C 5 2.5 3.0 3.5 4.0 4.5 5.0 Crosstalk 40 20 - 40 °C 0 2.0 60 V+ = 3 V RL = 50 Ω 0 10 K 5.5 100 K 1M V+ - Supply Voltage (V) Switching Time vs. Temperature and Supply Voltage 100 M Crosstalk and Off Isolation vs. Frequency 3.0 0 2.5 V+ = 3 V RL = 50 Ω -1 2.0 Insertion Loss (dB) VT - Threshold Voltage (V) 10 M Frequency (Hz) 1.5 1.0 0.5 -2 -3 -4 -5 0.0 -6 0 1 2 3 4 5 6 7 1K 100 K 10 K 1M 10 M 100 M 1G Frequency (Hz) V+ - Supply Voltage (V) Insertion Loss vs. Frequency Input Switching Threshold vs. Supply Voltage 6 CL = 1 nF 4 Charge Injection (pC) V+ = 2.5 V 2 V+ = 3 V 0 -2 V+ = 5 V -4 -6 0 1 2 3 4 5 6 VD - Analog Voltage (V) Charge Injection vs. Analog Voltage www.vishay.com 6 Document Number: 71347 S-72609-Rev. D, 24-Dec-07 DG9411 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input V+ 0V Switch Output COM NO or NC Switch Input tr < 20 ns tf < 20 ns 50 % VOUT 0.9 x V OUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tOFF tON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Figure 1. Switching Time V+ Logic Input V+ VNO VNC 0V COM NO tr < 5 ns tf < 5 ns 3V VO NC RL 300 Ω IN CL 35 pF VNC = V NO VO GND Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL = 1 nF 3V IN On Off On GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection Document Number: 71347 S-72609-Rev. D, 24-Dec-07 www.vishay.com 7 DG9411 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0 V, 2.4 V IN COM NC or NO V NC/NO Off Isolation = 20 log RL GND VCOM Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71347. www.vishay.com 8 Document Number: 71347 S-72609-Rev. D, 24-Dec-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1