CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage 5300 VRMS • Long term stability A 1 6 B C 2 5 C • Lead (Pb)-free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Industry standard dual-in-line package i179004 AGENCY APPROVALS DESCRIPTION • Underwriters lab file no. E52744 system code H or J The CNY17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending • BSI IEC 60950 IEC 60065 • FIMKO ORDER INFORMATION PART REMARKS CNY17-1 CTR 40 to 80 %, DIP-6 CNY17-2 CTR 63 to 125 %, DIP-6 CNY17-3 CTR 100 to 200 %, DIP-6 CNY17-4 CTR 160 to 320 %, DIP-6 CNY17-1X006 CTR 40 to 80 %, DIP-6 400 mil (option 6) CNY17-1X007 CTR 40 to 80 %, SMD-6 (option 7) CNY17-1X009 CTR 40 to 80 %, SMD-6 (option 9) CNY17-2X006 CTR 63 to 125 %, DIP-6 400 mil (option 6) CNY17-2X007 CTR 63 to 125 %, SMD-6 (option 7) CNY17-2X009 CTR 63 to 125 %, SMD-6 (option 9) CNY17-3X006 CTR 100 to 200 %, DIP-6 400 mil (option 6) CNY17-3X007 CTR 100 to 200 %, SMD-6 (option 7) CNY17-3X009 CTR 100 to 200 %, SMD-6 (option 9) CNY17-4X006 CTR 160 to 320 %, DIP-6 400 mil (option 6) CNY17-4X007 CTR 160 to 320 %, SMD-6 (option 7) CNY17-4X009 CTR 160 to 320 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6.0 V Forward current IF 60 mA INPUT Surge current Power dissipation Document Number: 83606 Rev. 1.5, 09-Nov-05 t ≤ 10 µs IFSM 2.5 A Pdiss 100 mW For technical questions, contact: [email protected] www.vishay.com 1 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT Collector emitter breakdown voltage BVCEO 70 V Emitter base breakdown voltage BVEBO 7.0 V mA IC 50 IC 100 mA Pdiss 150 mW VISO 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Collector current t < 1.0 ms Power dissipation COUPLER Isolation test voltage between emitter and detector referred to climate DIN 50014, part 2, Nov. 74 t = 1.0 s VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tsld 260 °C Isolation resistance max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Soldering temperature Ω Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.25 1.65 UNIT INPUT Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 mA VBR Reverse current VR = 6.0 V IR Capacitance VR = 0 V, f = 1.0 MHz Thermal resistance 6.0 V V 0.01 10 µA CO 25 pF Rth 750 K/W OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Collector base capacitance VCB = 5.0 V, f = 1.0 MHz CCB 6.5 pF Emitter base capacitance VEB = 5.0 V, f = 1.0 MHz CEB 7.5 pF Rth 500 K/W VCEsat 0.25 CC 0.6 CNY17-1 ICEO 2.0 50 nA CNY17-2 ICEO 2.0 50 nA CNY17-3 ICEO 5.0 100 nA CNY17-4 ICEO 5.0 100 nA Thermal resistance COUPLER Collector emitter, saturation voltage VF = 10 mA, IC = 2.5 mA Coupling capacitance Collector emitter, leakage current VCE = 10 V 0.4 V pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83606 Rev. 1.5, 09-Nov-05 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5.0 V, IF = 10 mA IC/IF VCE = 5.0 V, IF = 1 mA PART SYMBOL MIN. TYP. MAX. UNIT CNY17-1 CTR 40 80 % CNY17-2 CTR 63 125 % CNY17-3 CTR 100 200 % CNY17-4 CTR 160 320 % CNY17-1 CTR 13 30 % CNY17-2 CTR 22 45 % CNY17-3 CTR 34 70 % CNY17-4 CTR 56 90 % Note Current transfer ratio and collector-emitter leakage current by dash number (Tamb °C). SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (WITHOUT SATURATION) Turn-on time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω ton 3.0 µs Rise time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω tr 2.0 µs Turn-off time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω toff 2.3 µs Fall time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω tf 2.0 µs Cut-off frequency IF = 10 mA, VCC = 5.0 V, RL = 75 Ω fCO 250 kHz ton 3.0 µs SWITCHING OPERATION (WITH SATURATION) IF = 20 mA Turn-on time Rise time Turn-off time Fall time CNY17-2 ton 4.2 µs CNY17-3 ton 4.2 µs IF = 5 mA CNY17-4 ton 6.0 µs IF = 20 mA CNY17-1 tr 2.0 µs CNY17-2 tr 3.0 µs CNY17-3 tr 3.0 µs IF = 5 mA CNY17-4 tr 4.6 µs IF = 20 mA CNY17-1 toff 18 µs IF = 10 mA IF = 10 mA CNY17-2 toff 23 µs CNY17-3 toff 23 µs IF = 5 mA CNY17-4 toff 25 µs IF = 20 mA CNY17-1 tf 11 µs CNY17-2 tf 14 µs CNY17-3 tf 14 µs CNY17-4 tf 15 µs IF = 10 mA IF = 10 mA IF = 5 mA Document Number: 83606 Rev. 1.5, 09-Nov-05 CNY17-1 For technical questions, contact: [email protected] www.vishay.com 3 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 (TA = 0 °C, VCE = 5 V) IC/IF = f (IF) V CC = 5 V IC IC (%) IF R L = 75 Ω IF 100 1 2 3 4 10 47 Ω 1 0.1 icny17_01 1 Fig. 1 - Linear Operation (without Saturation) 10 IF (mA) icny17_04 Fig. 4 - Current Transfer Ratio vs. Diode Current 1000 IF (TA = 25 °C, VCE = 5 V) IC/IF = f (IF) 1 kΩ IC (%) IF V CC = 5 V 100 1 2 3 4 10 47 Ω 1 icny17_02 0.1 icny17_05 Fig. 2 - Switching Operation (with Saturation) 1000 (TA = 50 °C, VCE = 5 V) IC/IF = f (IF) (TA = - 25 °C, VCE = 5 V) IC/IF = f (IF) 100 IC (%) IF IC (%) IF 10 Fig. 5 - Current Transfer Ratio vs. Diode Current 1000 1 2 3 4 10 100 1 2 3 4 10 1 1 0.1 icny17_03 1 10 IF (mA) Fig. 3 - Current Transfer Ratio vs. Diode Current www.vishay.com 4 1 IF (mA) 0.1 icny17_06 1 10 IF (mA) Fig. 6 - Current Transfer Ratio vs. Diode Current For technical questions, contact: [email protected] Document Number: 83606 Rev. 1.5, 09-Nov-05 CNY17 Optocoupler, Phototransistor Output, with Base Connection 40 1000 (TA = 75 °C, VCE = 5 V) IC/IF = f (IF) IC = f (VCE) 30 IF = 14 mA 100 IC IC (%) IF Vishay Semiconductors 1 2 3 4 10 IF = 12 mA 20 IF =10 mA IF = 7 mA 10 IF = 5 mA IF = 1 mA 1 0 0.1 1 0 10 5 10 15 VCE (V) icny17_10 IF (mA) icny17_07 Fig. 10 - Output Characteristics Fig. 7 - Current Transfer Ratio vs. Diode Current 1000 1.2 VF = f (IF) (IF = 10 mA, VCE = 5 V) IC/IF = f (T) 25 °C 50 °C 75 °C 4 1.1 3 2 100 VF (V) IC (%) IF IF = 2 mA 1 1.0 10 - 25 0.9 0 25 50 75 TA (°C) icny17_08 0.1 10 100 IF (mA) icny17_11 Fig. 11 - Forward Voltage Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature 30 1 IC = f (VCE) IF = 0 VCE = 35 V IB = 40 µA 20 15 IB = 20 µA 10 IB = 15 µA ICEO (µA) 25 IC (mA) 1 ICEO = f (V,T) (IF = 0) 0.1 VCE = 12 V 0.01 IB = 10 µA 5 0 IB = 5 µA IB = 2 µA 0.001 0 icny17_09 5 10 VCE (V) Fig. 9 - Transistor Characteristics Document Number: 83606 Rev. 1.5, 09-Nov-05 15 0 25 50 75 °C TA 100 icny17_12 Fig. 12 - Collector Emitter Off-state Current For technical questions, contact: [email protected] www.vishay.com 5 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection 1.0 1.0 VCEsat = f (IC) 0.9 0.9 0.7 0.7 VCE sat (V) IF = 3 x IC VCE sat 0.6 0.5 0.4 0.6 0.4 0.3 0.2 0.2 0.1 0.1 0 1 10 IF = 2 x IC IF = 3 x IC 1 100 IC (mA) icny17_13 IF = IC 0.5 0.3 0 10 100 IC (mA) icny17_16 Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-1 Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-4 1.0 200 Ptot = f (TA) 0.9 VCEsat = f (IC) 0.8 150 Ptot (mW) 0.7 VCE sat (V) VCEsat = f (IC) 0.8 0.8 0.6 0.5 IF = 2 x IC 0.4 0.3 100 Diode IF = 3 x IC 0.2 Transistor 50 0.1 0 0 1 10 100 IC (mA) icny17_14 0 25 icny17_18 Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-2 50 75 100 TA (°C) Fig. 17 - Permissible Power Dissipation for Transistor and Diode 1.0 0.9 VCEsat = f (IC) 0.8 VCE sat (V) 0.7 IF = IC 0.6 0.5 0.4 0.3 IF = 2 x IC 0.2 0.1 IF = 3 x IC 0 1 icny17_15 10 100 IC (mA) Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-3 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83606 Rev. 1.5, 09-Nov-05 CNY17 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO Method A 0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.300 (7.62) typ. 0.048 (0.45) 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18° 4° typ. 0.031 (0.80) min. 0.031 (0.80) 3°to 9° 0.035 (0.90) 0.018 (0.45) 0.022 (0.55) 0.100 (2.54) typ. 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.300 to 0.347 (7.62 to 8.81) i178004 Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref. 0.028 (0.7) min. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) Document Number: 83606 Rev. 1.5, 09-Nov-05 0.331 (8.4) min. 0.406 (10.3) max. 0.012 (0.30 ) typ. 0.0098 (0.249) 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. For technical questions, contact: [email protected] 15° max. 18450 www.vishay.com 7 CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 83606 Rev. 1.5, 09-Nov-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1