MC33897T, TSMC Silicon Errata

Freescale Semiconductor
Errata (or Chip Errata)
Document Number: MC33897TER
Rev. 1.0, 6/2006
MC33897T, TSMC Silicon Errata
Introduction
Freescale is expanding silicon wafer capacity at Taiwan Semiconductor Manufacturing Company, LTD. (TSMC) located in
Science Park, Taiwan. Freescale is working with TSMC to ensure a smooth transition and is pursuing full automotive qualification
of all transferred products.
This errata sheet applies to the following device:
•
MC33897TD
•
MC33897TEF
•
SC900800TD
Device Revision Identification
The device revision is indicated by a 1-character code after the device code. For instance the “T” in the “MC33897T” indicates
TSMC silicon. All standard devices are marked with a device identification and build information code.
Device Build Information / Date Code
Device markings indicate build information containing the week and year of manufacture. The date is coded with the last four
characters of the nine character build information code (e.g. “CTKAH0429”). The date is coded as four numerical digits where
the first two digits indicate the year and the last two digits indicate the week. For instance, the date code “0429” indicates the 29th
week of the year 2004.
Device Part Number Prefixes
Some device samples are marked with a PC prefix. A PC prefix indicates a prototype device which has undergone basic testing
only. After full characterization and qualification, devices will be marked with the MC or SC prefix.
Analog, M87G Mask Errata - Parameter Adjustments
We have noted the following parameter adjustments on the Single Wire CAN, TSMC fabricated silicon. Please consider the
MC33897 Data Sheet in combination with this errata for the TSMC products. Formal parameter adjustments will be updated in
the Data Sheet upon final qualification results.
Table 1. Static Electrical Characteristics
Characteristics noted under the following conditions: -40°C ≤ TA ≤ 125°C. Voltages are relative to GND unless otherwise noted. All positive
currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
Unit
VBIA
2.0
.
2.3
V
4.4
-
5.4
4.4
-
5.7
-
45
75
BUS
Input Threshold
Awake
5.0 V ≤ VBATT ≤ 26.5 V
Normal Mode Output High Voltage
6.0 V ≤ VBATT ≤ 26.5 V, RL ≥ 200 Ω
6.0 V ≤ VBATT ≤ 26.5 V, RL ≤ 3332 Ω
VNOHF
V
GENERAL
Quiescent Current
Sleep
5.0 V ≤ VBATT ≤ 13 V (1)
IQSLP
Notes
1 After tCNTLFDLY
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MC33897TER
Rev. 1.0
6/2006
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