IRF IRUH50P333B1M

PD-97027
IRUH50P333B1M
Ultra Low Dropout
Fixed Positive Linear Regulator
+5.0Vin to +3.3Vout at 3.0A
Product Summary
Part Number
Dropout
IO
Vin
Vout
IRUH50P333B1M
0.4V
3.0A
5.0V
3.3V
MO-078AA
Features:
The IRUH50P333B1M is a space qualified, ultra low
dropout linear regulator designed specifically for space
applications. This product has been characterized to a total
ionizing dose of 1.0 Mrad(Si) per MIL-STD-883, Method
1019 at both high and low dose rates under biased and
unbiased conditions to account for ELDRS effects in bipolar
devices. The ultra low dropout voltage of 0.4V@ 3A makes
the part particularly useful for applications requiring low
noise and higher efficiency.
n
n
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Total dose to 1.0 Mrad(Si) and low dose
capability to 500 Krad(Si) allows use in
space applications
Single Event latchup Immune
LET = 84 MeV/(mg/cm2)
Fluency = 1 x 109 Ions/cm2
Low noise, higher efficiency
Ultra low dropout voltage of 0.4V@ 3A out
significantly reduces power consumption
Remote shutdown permits power
sequencing to be easily implemented
Hermetic MO-078AA (TO-258AA)
pack ensures higher reliability
Space Level Screened
This part is also available in 8- Lead Flat Pack
Package as IRUH50P333A1M
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Output Current
Input Voltage
Power Dissipation, TC = 25°C
IO
3.5
A
VIN
7.0
PTOT
19
V
W
Thermal Resistance, Junction to Case
°C/W
RTHJC
6.5
Operating Temperature Range
TJ
-55 to +125
Storage Temperature Range
TS
TL
-65 to +150
Lead Temperature
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°C
300
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11/15/05
IRUH50P333B1M
Pre-Radiation
Electrical Characteristics @TC = 25°C (Unless Otherwise Specified)
Parameter
Min.
Typ.
Max.
VIN = 5.0V, IO = 1.5A
Test Conditions
3.267
3.3
3.333
VIN = 4.5V, IO = 50mA
3.135
-
3.465
3.135
-
3.465
3.135
-
3.465
3.465
VIN = 4.5V, IO = 3.0A
Output Voltage
Symbol
VOUT
VIN = 5.5V, IO = 50mA
VIN = 5.5V, IO = 3.0A
Input Voltage Range - Operating IO = 3.0A
IO = 3.0A, VOUT = 3.3V
Dropout Voltage
V
3.135
-
VIN
4.5
-
6.5
VDROP
-
-
0.4
ILATCH
3.0
-
-
65
-
-
dB
-
200
-
µA
1.0
-
1.6
-0.1
-
+0.1
Current Limit
VIN = 5.0V, Overcurrent Latchup
Ripple Rejection
F = 120Hz, IO = 50mA
Shutdown Source Current
Shutdown Pin Threshold
VSHDN = 5.0V
ISHDN
VIN = 5.0V
VSHDN
Output Voltage at Shutdown
VIN = 5.0V, IO = 50mA, VSHDN = +5.0V VOUT (SHDN)
c
Units
A
V
Pre-Radiation
Electrical Characteristics @TC = -55°C to 125°C (Unless Otherwise Specified)
Parameter
Test Conditions
Output Voltage
Min.
Typ.
Max.
VIN = 5.0V, IO = 1.5A
3.135
3.3
3.465
VIN = 4.5V, IO = 50mA
3.135
-
3.465
VIN = 4.5V, IO = 3.0A
3.135
-
3.465
VIN = 5.5V, IO = 50mA
3.135
-
3.465
VIN = 5.5V, IO = 3.0A
3.135
-
3.465
Input Voltage Range - Operating IO = 3.0A
IO = 3.0A, VOUT = 3.3V
Dropout Voltage
VIN = 5.0V, Overcurrent Latchup
Current Limit
Symbol
VOUT
VIN
4.5
-
6.5
VDROP
-
-
0.4
ILATCH
3.0
-
-
Units
V
A
Ripple Rejection
F = 120Hz, IO = 50mA
65
-
-
dB
Shutdown Source Current
Shutdown Pin Threshold
VSHDN = 5.0V
ISHDN
-
200
-
µA
VIN = 5.0V
VSHDN
1.0
-
1.6
Output Voltage at Shutdown
VIN = 5.0V, IO = 50mA, VSHDN = +5.0V VOUT (SHDN)
-0.1
-
+0.1
c
V
For notes, please refer to page 3
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IRUH50P333B1M
Post-Radiation
Electrical Characteristics @TC = 25°C (Unless Otherwise Specified)
Parameter
Test Conditions
Symbol
VIN = 5.0V, IO = 1.5A
VIN = 4.5V, IO = 50mA
Output Voltage
VIN = 4.5V, IO = 3.0A
VOUT
VIN = 5.5V, IO = 50mA
VIN = 5.5V, IO = 3.0A
Min.
Typ.
Max.
3.135
-
3.465
3.135
-
3.465
3.135
-
3.465
3.135
-
3.465
3.135
-
3.465
Units
V
Current Limit
VIN = 5.0V
3.0
-
-
A
Ripple Rejection
F = 120Hz, IO = 50mA
40
-
-
dB
Output Voltage at Shutdown
VIN = 5.0V, IO = 50mA, VSHDN = +5.0V VOUT (SHDN)
-0.1
-
+0.1
V
IMAX
Notes for Electrical Characteristic Tables
 VShutdown ramp from 0.8V to 4.8V, output monitored for a 100mV drop below the nominal specification for Vout
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IRUH50P333B1M
Pre-Radiation Characteristics
OMR9601 Ripple Rejection vs. Frequency
3A
120
1.5A
100
.75A
.50A
(db)
80
60
40
20
0
100
1,000
10,000
100,000
1,000,000
Frequency (Hz)
Fig 1. Ripple Rejection Vs Frequency
Radiation Performance Characteristics
Test
Conditions
Min
Typ
Unit
MIL-STD-883, Method 1019
Total Ionizing Dose (Gamma)
Operating Bias applied during exposure
Krads (Si)
1,000
Full Rated Load, Vin=5.0V
Neutron Fluence
MIL-STD-883, Method 1017
Single Event effects
Heavy Ions (LET)
SEU, SEL, SEGR, SEB
Operating Bias applied during exposure
1.00E+09
84
1.00E+13
Neutrons/cm
2
2
MeV*cm /mg
Full Rated Load, Vin=5.0V
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IRUH50P333B1M
Vout
Vin
Vout
Vin
IRUH50P333B1M
100uF 16V
Tantalum
SHDN
1.0uFx10
Ceramic X 7R
GND
1000uF 6.3V
Low ESR Tantalum
Ground
Fig 2. Typical Application Circuit
Input Capacitance
Recommended input capacitance for a generic application is a 100µF, 16V tantalum capacitor. However, the
input capacitance is not critical to the stability of the regulator and is therefore application dependant. In
designs with a clean bus voltage that is situated close to the input of the regulator, only a small ceramic
capacitor will be needed to decouple high frequency noise. On the other hand , in designs with a noisy bus,
a larger capacitor will be needed. Care should be taken to ensure that the input to the regulator is sufficiently
free of noise and disturbances.
Output Capacitance
Like most ultra low dropout voltage regulators, IRUH50P333B1M requires the use of output capacitors as
part of the device frequency compensation. The device requires a minimum of 220µF tantalum to ensure
stability.
Many different types of capacitor are available and have widely varying characteristics. These capacitors
differ in capacitor tolerance, equivalent series resistance (ESR), equivalent series inductance and capacitance
temperature coefficient. The IRUH50P333B1M frequency compensation optimizes frequency response with
low ESR capacitors. In general, use capacitors with an ESR of less than 50mΩ for heavy load applications.
High quality bypass capacitors must be also be used to limit the high frequency noise generated by the load.
Multiple small ceramic capacitors are typically required to limit parasitic inductance (ESL) and ESR in the
capacitors to acceptable levels.
The upper limit of the capacitance is governed by the delayed over-current latch function of the regulator. The
regulator has a protection circuit that will latch the device off in the event of a short circuit. However, since it is
known that the regulator will draw a large in-rush current upon startup, the latch-off is delayed by about 10ms
to allow the outout capacitors to charge to a steady state without shutting down. During this period, the
regulator will have an output current at its maximum of around 5A typical. Therefore, the maximum output
capacitance can be as high as 20,000µF without causing device to latch-off during start-up.
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IRUH50P333B1M
Vout
Vin
Drive
Gnd
Shutdown
Ground
Fig 3. Simplified Schematic Circuit
Space Level Screening Requirements
TEST/INSPECTION
SCREENING LEVEL
MIL-STD-883
SPACE
METHOD
1030
Pre Seal Burn-In
Optional
Nondestructive Bond Pull
100%
2023
Internal Visual
100%
2017
Temperature Cycle
100%
1010
Constant Acceleration
100%
2001
Mechanical Shock
100%
2002
PIND
100%
2020
Pre Burn-In-Electrical
100%
Burn-In
100%
Final Electrical
100%
Seal
100%
1014
Radiographic
External Visual
100%
100%
2012
2009
1015
Note:
International Rectifier currently doesnot have a DSCC certified Radiation Hardness Assurance Program
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IRUH50P333B1M
Case Outline and Dimensions - MO-078AA
Pin Assignment
Pin #
1
Pin Description
Vin
2
3
GND
Vout
4
SHUTDOWN
5
N/C
Note:
1) All dimensions are in inches
Part Numbering Nomenclature
IR
Linear Regulator Module
U = Ultra Low Dropout Regulator
Radiation Hardening
U
H
50
P
33
3
B
1M
P
Screening
P = Unscreened, 25°C
Electrical Test ( Not for Qual)
K = Space Level Screening
H = RAD Hardened or Tolerant
RAD Level
Input Voltage
1M = 1M Rads
50 = 5.0V
Package Code
Polarity
B = MO-078AA
P = Positive
Output Voltage
33 = 3.3V
Maximum Output Current
3 = 3.0 Amp
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/2005
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