RB521S30 200 mA low VF MEGA Schottky barrier rectifier Rev. 01 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n Average forward current: IF(AV) ≤ 0.2 A Reverse voltage: VR ≤ 30 V Low reverse current: IR ≤ 30 µA AEC-Q101 qualified Ultra small and flat lead SMD plastic package 1.3 Applications n n n n n Low current rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz Tamb ≤ 120 °C IR reverse current VR reverse voltage VF forward voltage Min [1] Typ Max Unit - - 0.2 A Tsp ≤ 140 °C - - 0.2 A VR = 10 V - 2.5 30 µA - - 30 V - 420 500 mV IF = 0.2 A [2] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for cathode 1 cm2. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 1 2 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number RB521S30 Package Name Description Version SC-79 plastic surface-mounted package; 2 leads SOD523 4. Marking Table 4. Marking codes Type number Marking code RB521S30 ZB 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 30 V IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz [1] - 0.2 A - 0.2 A [2] - 1 A [3][4] - 275 mW [3][1] - 420 mW [3][5] - 500 mW Tamb ≤ 120 °C Tsp ≤ 140 °C IFSM non-repetitive peak forward current tp = 8.3 ms half sine wave; JEDEC method Ptot total power dissipation Tamb ≤ 25 °C RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 2 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Tj = 25 °C prior to surge. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point Typ Max Unit [3] - - 455 K/W [4] - - 300 K/W [5] - - 250 K/W [6] - - 90 K/W [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. [6] Soldering point of cathode tab. RB521S30_1 Product data sheet Min [1][2] © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 3 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 006aab710 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 102 10 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab711 103 duty cycle = Zth(j-a) (K/W) 1 0.5 102 0.25 0.75 0.33 0.2 0.1 0.05 0 10 1 10−3 0.02 0.01 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for cathode 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 4 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions forward voltage VF Min Typ Max Unit [1] IF = 0.1 mA - 130 190 mV IF = 1 mA - 190 250 mV IF = 10 mA - 255 300 mV IF = 100 mA - 355 410 mV IF = 200 mA - 420 500 mV IR reverse current VR = 10 V - 2.5 30 µA Cd diode capacitance f = 1 MHz; VR = 1 V - 20 25 pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 006aab712 10 IF (A) 006aab713 10−2 IR (A) 10−3 (1) (2) 1 (1) 10−4 (2) 10−1 10−5 (3) 10−6 10−2 (3) (4) (5) 10−7 10−3 10−8 10−4 0.0 (4) 10−9 0.2 0.4 0.6 0.8 1.0 0 VF (V) 10 20 30 VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig 3. Forward current as a function of forward voltage; typical values Fig 4. Reverse current as a function of reverse voltage; typical values RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 5 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 006aab714 35 Cd (pF) 30 006aab715 0.15 PF(AV) (W) (4) (3) 25 0.10 (2) 20 (1) 15 0.05 10 5 0 0 10 20 0.0 0.0 30 0.1 0.2 VR (V) 0.3 IF(AV) (A) f = 1 MHz; Tamb = 25 °C Tj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. 006aab716 0.175 PR(AV) (W) 0.15 Average forward power dissipation as a function of average forward current; typical values 006aab717 0.3 (1) IF(AV) (A) 0.125 (2) 0.2 0.10 (1) (2) (3) (3) 0.075 (4) 0.1 0.05 (4) 0.025 0.0 0.0 0 5 10 15 20 25 0 25 50 75 100 VR (V) Tj = 125 °C 125 150 175 Tamb (°C) FR4 PCB, standard footprint (1) δ = 1 Tj = 150 °C (2) δ = 0.9 (1) δ = 1; DC (3) δ = 0.8 (2) δ = 0.5; f = 20 kHz (4) δ = 0.5 (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 7. Average reverse power dissipation as a function of reverse voltage; typical values Fig 8. Average forward current as a function of ambient temperature; typical values RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 6 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 006aab718 0.3 006aab719 0.3 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 0.2 0.2 (3) (3) (4) 0.1 (4) 0.1 0.0 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C FR4 PCB, mounting pad for cathode 1 cm2 Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 9. Average forward current as a function of ambient temperature; typical values Fig 10. Average forward current as a function of solder point temperature; typical values 8. Test information tr t D.U.T. RS = 50 Ω tp 10 % + IF IF V = VR + IF × RS SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω VR (1) 90 % mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 11. Reverse recovery time test circuit and waveforms RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 7 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 12. Duty cycle definition The current ratings for the typical waveforms as shown in Figure 8, 9 and 10 are calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 0.85 0.75 0.65 0.58 1 1.65 1.25 1.55 1.15 2 0.34 0.26 Dimensions in mm 0.17 0.11 02-12-13 Fig 13. Package outline SOD523 (SC-79) RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 8 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number RB521S30 [1] Package Description SOD523 Packing quantity 3000 8000 10000 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 For further information and the availability of packing methods, see Section 14. 11. Soldering 2.15 1.1 solder lands solder resist 0.5 0.6 (2×) (2×) 1.2 solder paste occupied area 0.7 (2×) 0.8 (2×) Dimensions in mm sod523_fr Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint SOD523 (SC-79) RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 9 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes RB521S30_1 20091006 Product data sheet - - RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 10 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] RB521S30_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 October 2009 11 of 12 RB521S30 NXP Semiconductors 200 mA low VF MEGA Schottky barrier rectifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 October 2009 Document identifier: RB521S30_1