DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP64-06 Silicon PIN diode Product specification Supersedes data of 2000 Jan 04 2000 Mar 22 Philips Semiconductors Product specification Silicon PIN diode BAP64-06 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF attenuators and switches 1 anode • Low diode capacitance 2 cathode • Low diode forward resistance 3 common connection • Low series inductance • For applications up to 3 GHz. handbook, halfpage 3 APPLICATIONS • RF attenuators and switches. 2 1 DESCRIPTION Top view Two planar PIN diodes in common anode configuration in a SOT23 small plastic SMD package. 2 1 3 MAM437 Marking code: 6Kp Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 175 V IF continuous forward current − 100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 2000 Mar 22 Ts = 90 °C 2 Philips Semiconductors Product specification Silicon PIN diode BAP64-06 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage IR reverse current Cd diode capacitance IF = 50 mA 0.95 1.1 V VR = 175 V − 10 µA VR = 20 V − 1 µA 0.52 − pF f = 1 MHz VR = 0 rD diode forward resistance τL charge carrier life time LS series inductance VR = 1 V 0.37 − pF VR = 20 V 0.23 0.35 pF f = 100 MHz; note 1 IF = 0.5 mA 20 40 Ω IF = 1 mA 10 20 Ω IF = 10 mA 2 3.8 Ω IF = 100 mA 0.7 1.35 Ω 1.55 − µs 1.4 − nH when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2000 Mar 22 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 220 K/W Philips Semiconductors Product specification Silicon PIN diode BAP64-06 GRAPHICAL DATA MCD777 102 handbook, halfpage MCD778 600 handbook, halfpage rD (Ω) Cd (fF) 10 400 1 200 10−1 10−1 10 1 IF (mA) 0 102 0 4 12 16 20 VR (V) f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. MCD779 0 8 Diode capacitance as a function of reverse voltage; typical values. MCD780 0 handbook, halfpage handbook, halfpage S 2 (1) 21 (dB) −1 (2) S21 2 (dB) (3) −10 (4) −2 −3 −20 −4 −5 0.5 (1) IF = 100 mA. (2) IF = 10 mA. 1 1.5 2 2.5 f (GHz) −30 0.5 3 2 2.5 3 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode zero biased and inserted in series with a 50 Ω stripline circuit; Tamb = 25 °C. Insertion loss (|S21|2) of the diode as a function of frequency; typical values. 2000 Mar 22 1.5 f (GHz) Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network; Tamb = 25 °C. Fig.4 1 Fig.5 4 Isolation (|S21|2) of the diode as a function of frequency; typical values. Philips Semiconductors Product specification Silicon PIN diode BAP64-06 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2000 Mar 22 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 5 Philips Semiconductors Product specification Silicon PIN diode BAP64-06 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. 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