PHILIPS BCV72

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCV71; BCV72
NPN general purpose transistors
Product data sheet
Supersedes data of 1997 Mar 11
1999 Apr 08
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCV71; BCV72
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 60 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
handbook, halfpage
3
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
BCV71
K7∗
BCV72
K8∗
1
Top view
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
80
V
VCEO
collector-emitter voltage
open base; IC = 2 mA
−
60
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
1999 Apr 08
Tamb ≤ 25 °C
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCV71; BCV72
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = 20 V
−
−
100
nA
IE = 0; VCB = 20 V; Tj = 100 °C
−
−
10
μA
−
−
100
nA
BCV71
−
90
−
BCV72
−
150
−
BCV71
110
−
220
BCV72
200
−
450
collector cut-off current
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
hFE
DC current gain
IC = 10 μA; VCE = 5 V
DC current gain
IC = 2 mA; VCE = 5 V
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
120
250
mV
IC = 50 mA; IB = 2.5 mA
−
210
−
mV
base-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
750
−
mV
IC = 50 mA; IB = 2.5 mA
−
850
−
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
550
−
700
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2.5
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−
−
MHz
F
noise figure
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
10
dB
VCEsat
VBEsat
1999 Apr 08
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCV71; BCV72
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
1999 Apr 08
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCV71; BCV72
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 08
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
115002/00/03/pp6
Date of release: 1999 Apr 08
Document order number: 9397 750 05555