PHP83N06T TrenchMOS™ Standard Level FET Rev. 01 — 11 January 2002 Product data M3D307 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: PHP83N06T in SOT78 (TO-220AB). 2. Features ■ TrenchMOS™ technology ■ Fast switching ■ Low on-state resistance. 3. Applications ■ Switch mode power supplies ■ Uninterruptible power supplies ■ General purpose switching. 4. Pinning information Table 1: Pinning - SOT78, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb g MBB076 MBK106 1 2 3 SOT78 (TO-220AB) 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. s PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit - 60 V VDS drain-source voltage (DC) ID drain current (DC) Tmb = 25 °C; VGS = 10 V - 75 A Ptot total power dissipation Tmb = 25 °C - 166 W Tj junction temperature - 175 °C RDSon drain-source on-state resistance Tj = 25 °C 9 12 mΩ Tj = 175 °C - 24 mΩ VGS = 10 V; ID = 25 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions RGS = 20 kΩ Min Max Unit - 60 V - 60 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 75 A Tmb = 100 °C; VGS = 10 V; Figure 2 - 59 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 240 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 166 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IDR reverse drain current (DC) Tmb = 25 °C - 75 A IDRM pulsed reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 240 A unclamped inductive load; ID = 65 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C - 211 mJ Avalanche ruggedness EDS(AL) non-repetitive avalanche energy © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 2 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 03aa16 120 03ag75 120 Pder Ider (%) (%) 80 80 40 40 0 0 0 50 100 150 0 200 o Tmb ( C) 50 100 150 200 Tmb (ºC) VGS ≥ 4.5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03ag66 103 ID (A) RDSon = VDS / ID tp = 10 µs 102 100 µs 1 ms 10 DC 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 3 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Figure 4 - - 0.9 K/W Rth(j-a) thermal resistance from junction to ambient - 60 - K/W SOT78 package; vertical in still air 7.1 Transient thermal impedance 03ag65 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 δ= P single pulse tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 4 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 - - V Tj = −55 °C 55 - - V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V - 0.05 10 µA Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 0.25 mA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 VDS = 55 V; VGS = 0 V Tj = 25 °C Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 9 12 mΩ Tj = 175 °C - - 24 mΩ - 70 - nC - 10 - nC - nC IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss VDD = 44 V; ID = 25 A; VGS = 10 V; Figure 13 - 26 - 2230 3093 pF output capacitance - 510 645 pF Crss reverse transfer capacitance - 290 467 pF td(on) turn-on delay time - 18 - ns tr rise time - 90 - ns td(off) turn-off delay time - 84 - ns tf fall time - 68 - ns - 0.85 1.2 V - 62 - ns - 140 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 VDD = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 5 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 03ag67 03afg69 80 80 Tj = 25 ºC ID 10 V 7 V 6V VDS > ID x RDSon ID (A) (A) 60 60 5.5 V 40 40 5V 20 20 175 ºC VGS = 4.5 V 0 Tj = 25 ºC 0 0 0.4 0.8 1.2 1.6 2 VDS (V) 0 Tj = 25 °C; tp = 300 µs 2 4 6 8 Tj = 25 °C and 175 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa28 03ag68 0.02 2.4 Tj = 25 ºC RDSon VGS (V) VGS = 6 V a (Ω) 0.015 1.8 7V 0.01 1.2 10 V 0.005 0.6 0 0 0 20 40 60 80 ID (A) Tj = 25 °C -60 60 120 o Tj ( C) 180 R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data 0 Rev. 01 — 11 January 2002 6 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 03aa32 03aa35 10-1 ID 5 VGS(th) (A) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 min typ max 10-5 1 10-6 0 -60 0 60 120 o Tj ( C) 180 0 2 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ag71 104 C (pF) Ciss 103 Coss Crss 102 10-1 1 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 7 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 03ag70 03ag72 80 10 VGS VGS = 0 V IS (A) ID = 25 A (V) Tj = 25 ºC 8 60 VDD = 14 V 44 V 6 40 4 20 Tj = 25 ºC 175 ºC 2 0 0 0 0.4 0.8 VSD (V) 1.2 0 40 60 QG (nC) 80 Tj = 25 °C; ID = 25 A VGS = 0 V Fig 12. Reverse diode current as a function of reverse diode voltage; typical values. Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data 20 Rev. 01 — 11 January 2002 8 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC EIAJ 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 14. SOT78 (TO-220AB). © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 9 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 10. Revision history Table 6: Revision history Rev Date 01 20020111 CPCN - Description Product data; initial version © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 10 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Product data Rev. 01 — 11 January 2002 11 of 13 PHP83N06T Philips Semiconductors TrenchMOS™ Standard Level FET Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09122 Rev. 01 — 11 January 2002 12 of 13 Philips Semiconductors PHP83N06T TrenchMOS™ Standard Level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 January 2002 Document order number: 9397 750 09122