TO -2 20F BUJ303AX NPN power transistor Rev. 05 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A (TO220F) "full pack" plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Isolated package Very low switching and conduction losses 1.3 Applications DC-to-DC converters Inverters High frequency electronic lighting ballasts Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current see Figure 1; see Figure 2; see Figure 4 - - 5 A Ptot total power dissipation Th ≤ 25 °C; see Figure 3 - - 32 W VCESM collector-emitter peak voltage VBE = 0 V - - 1000 V IC = 5 mA; VCE = 5 V; Th = 25 °C; see Figure 11 10 22 35 IC = 500 mA; VCE = 5 V; Th = 25 °C; see Figure 11 14 25 35 IC = 2.5 A; IBon = 0.5 A; see Figure 14; see Figure 15; VBB = -5 V; LB = 1 µH; Th = 25 °C - 145 160 Static characteristics hFE DC current gain Dynamic characteristics tf fall time ns BUJ303AX NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector Simplified outline Graphic symbol mb 3 E emitter mb n.c. mounting base; isolated C B E sym123 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package BUJ303AX Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 1000 V VCEO collector-emitter voltage IB = 0 A - 500 V see Figure 1; see Figure 2; see Figure 4 - 5 A - 10 A - 2 A - 4 A IC collector current ICM peak collector current IB base current IBM peak base current DC Th ≤ 25 °C; see Figure 3 Ptot total power dissipation - 32 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C BUJ303AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 BUJ303AX NXP Semiconductors NPN power transistor VCC LC IBon VBB 003aag028 12 IC (A) VCL(CE) probe point LB 8 DUT 001aab999 4 0 Fig 1. Test circuit for reverse bias safe operating area Fig 2. 0 400 800 1200 VCEclamp (V) Reverse bias safe operating area 03aa13 120 Pder (%) 80 40 0 0 50 100 150 200 Th (°C) Fig 3. Normalized total power dissipation as a function of heatsink temperature BUJ303AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BUJ303AX NXP Semiconductors NPN power transistor 003aag029 102 IC (A) duty cycle = 0.01 10 ICMmax ICmax II(3) tp = 10 μs (1) 100 μs 1 (2) 1 ms I(3) 10-1 10 ms DC 10-2 III(3) 1 102 10 VCEclamp (V) 103 (1) Ptot maximum and Ptot peak maximum lines. (2) Second breakdown limits. (3) I = Region of permissible DC operation. II = Extension for repetitive pulse operation. III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs. Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C BUJ303AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BUJ303AX NXP Semiconductors NPN power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound ; see Figure 5 - - 3.95 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W 003aag067 10 Zth(j-h) (K/W) δ = 0.5 1 0.2 0.1 0.05 0.02 10-1 Ptot δ= 0 10-2 tp 10-3 10-6 Fig 5. 10-5 10-4 10-3 10-2 10-1 1 tp T t T 10 tp (s) 102 Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C; from all terminals to external heatsink; clean and dust free - - 2500 V Cisol isolation capacitance from collector to external heatsink ; f = 1 MHz; Th = 25 °C - 10 - pF BUJ303AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BUJ303AX NXP Semiconductors NPN power transistor 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VBE = 0 V; VCE = 1000 V; Th = 25 °C [1] - - 1 mA VBE = 0 V; VCE = 1000 V; Tj = 125 °C [1] - - 2 mA collector-base cut-off current VCB = 1000 V; IE = 0 A; Th = 25 °C [1] - - 1 mA ICEO collector-emitter cut-off current VCE = 500 V; IB = 0 A; Th = 25 °C [1] - - 0.1 mA ICES ICBO collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 9 V; IC = 0 A; Th = 25 °C - - 0.1 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; LC = 25 mH; Th = 25 °C; see Figure 6; see Figure 7 500 - - V VCEsat collector-emitter saturation voltage IC = 3 A; IB = 0.6 A; Th = 25 °C; see Figure 8; see Figure 9 - 0.25 1.5 V VBEsat base-emitter saturation voltage IC = 3 A; IB = 0.6 A; Th = 25 °C; see Figure 10 - 0.97 1.3 V hFE DC current gain IC = 5 mA; VCE = 5 V; Th = 25 °C; see Figure 11 10 22 35 IC = 500 mA; VCE = 5 V; Th = 25 °C; see Figure 11 14 25 35 IC = 2.5 A; VCE = 5 V; Th = 25 °C; see Figure 11 10 13.5 17 IC = 3 A; VCE = 5 V; Th = 25 °C; see Figure 11 - 12 - hFEsat DC saturation current gain Dynamic characteristics ton turn-on time ts storage time fall time tf [1] IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; VBB = -4 V; Th = 25 °C; resistive load; see Figure 12; see Figure 13 - 0.5 0.7 µs - 3.3 4 µs IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Th = 25 °C; inductive load; see Figure 14; see Figure 15 - 1.4 1.6 µs IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 - 1.7 1.9 µs IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; VBB = -4 V; Th = 25 °C; resistive load; see Figure 12; see Figure 13 - 0.33 0.45 µs IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Th = 25 °C; see Figure 14; see Figure 15 - 145 160 ns IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 - 160 200 ns Measured with half-sine wave voltage (curve tracer). BUJ303AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BUJ303AX NXP Semiconductors NPN power transistor IC (mA) 50 V 100 Ω to 200 Ω horizontal oscilloscope 250 vertical 6V 300 Ω 1Ω 100 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 6. Test circuit for collector-emitter sustaining voltage Oscilloscope display for collector-emitter sustaining voltage test waveform 003aag032 003aag031 2.0 VCEsat (V) 1.6 Fig 7. IC = 1 A 2A 3A 0.5 VCEsat (V) 4A 0.4 1.2 0.3 0.8 0.2 0.4 0 10-2 Fig 8. 0.1 10-1 1 IB (A) Collector-emitter saturation voltage as a function of base current; typical values BUJ303AX Product data sheet 0 10-1 10 Fig 9. 1 IC (A) 10 Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BUJ303AX NXP Semiconductors NPN power transistor 003aag033 1.4 VBEsat (V) 1.2 003aag034 102 hFE VCE = 5 V 1.0 0.8 10 0.6 0.4 1V 0.2 0 10-1 1 IC (A) 1 10-2 10 Fig 10. Base-emitter saturation voltage as a function of collector current; typical values VCC 10-1 1 10 IC (A) Fig 11. DC current gain as a function of collector current; typical values IC ICon 90 % 90 % RL VIM 0 RB DUT 10 % tp t tf T 001aab989 ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff Fig 12. Test circuit for resistive load switching BUJ303AX Product data sheet 001aab990 Fig 13. Switching times waveforms for resistive load All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BUJ303AX NXP Semiconductors NPN power transistor IC VCC ICon 90 % LC IBon VBB LB DUT 001aab991 10 % t tf IB ts toff IBon t −IBoff 001aab992 Fig 14. Test circuit for inductive load switching BUJ303AX Product data sheet Fig 15. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BUJ303AX NXP Semiconductors NPN power transistor 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 T (2) 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig 16. Package outline SOT186A (TO-220F) BUJ303AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BUJ303AX NXP Semiconductors NPN power transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BUJ303AX v.5 20110503 Product data sheet - BUJ303AX v.4 - BUJ303AX v.3 Modifications: BUJ303AX v.4 BUJ303AX Product data sheet • Various changes to content. 20110415 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 BUJ303AX NXP Semiconductors NPN power transistor 10. Legal information 10.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 BUJ303AX NXP Semiconductors NPN power transistor Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUJ303AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 3 May 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 BUJ303AX NXP Semiconductors NPN power transistor 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Isolation characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 May 2011 Document identifier: BUJ303AX