PHD22NQ20T N-channel TrenchMOS™ standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Low on-state resistance ■ Fast switching. 1.3 Applications ■ DC-to-DC converters ■ General purpose switching. 1.4 Quick reference data ■ VDS ≤ 200 V ■ Ptot ≤ 150 W ■ ID ≤ 21.1 A ■ RDSon ≤ 120 mΩ. 2. Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb [1] g MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT428 package. s PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Type number PHD22NQ20T Package Name Description Version D-PAK Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 175 °C - 200 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 200 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 21.1 A Tmb = 100 °C; VGS = 10 V; Figure 2 - 14.9 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 42.2 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 150 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C - 21.6 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 42.2 A - 150 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 9.3 A; tp = 0.13 ms; VDD ≤ 200 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data Rev. 01 — 08 March 2004 2 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa16 120 03aa24 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 Tmb (°C) 0 P tot P der = ----------------------- × 100% P ° 50 100 150 200 Tmb (°C) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03ap86 102 Limit RDSon = VDS / ID ID (A) tp = 10 µ s 100 µ s 10 DC 1 ms 1 10 ms 10-1 1 102 10 103 VDS (V) Tmb = 25 °C; IDM is single pulse; VGS = 10 V. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data Rev. 01 — 08 March 2004 3 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Figure 4 - - 1.0 K/W Rth(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; vertical in still air; SOT428 minimum footprint - 75 - K/W mounted on a printed-circuit board; vertical in still air; SOT404 minimum footprint - 50 - K/W 5.1 Transient thermal impedance 03ap85 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 single pulse δ= P 10-2 tp T t tp T 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data Rev. 01 — 08 March 2004 4 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V Tj = 25 °C 200 - - V Tj = −55 °C 178 - - V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V - 0.05 10 µA ID = 1 mA; VDS = VGS; Figure 9 VDS = 160 V; VGS = 0 V Tj = 25 °C Tj = 175 °C - - 500 µA - 10 100 nA Tj = 25 °C - 98 120 mΩ Tj = 175 °C - 274 336 mΩ ID = 15 A; VDD = 160 V; VGS = 10 V; Figure 13 - 30.8 - nC - 5 - nC - 11.3 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 - 1380 - pF - 145 - pF - 50 - pF IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 12 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDD = 100 V; RL = 5.6 Ω; VGS = 10 V; RG = 5.6 Ω - 10 - ns - 30 - ns turn-off delay time - 30 - ns fall time - 37 - ns - 0.86 1.2 V - 140 - ns - 680 - nC Source-drain diode VSD source-drain (diode forward) voltage IS = 20 A; VGS = 0 V; Figure 12 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data Rev. 01 — 08 March 2004 5 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03ap87 25 ID (A) 20 10 V 5 V Tj = 25 °C 03ap89 25 4.4 V ID (A) VDS > ID x RDSon 20 4.2 V 15 15 4V 10 10 175 °C 3.8 V 5 Tj = 25 °C 5 VGS = 3.6 V 0 0 0 1 2 3 4 5 VDS (V) Tj = 25 °C 2 4 6 VGS (V) Tj = 25 °C and 175 °C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03ap88 200 VGS = 4.2 V Tj = 25 °C RDSon 0 Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03al52 3 4.4 V (mΩ) a 150 4.6 V 2 5V 10 V 100 1 50 0 0 0 5 10 15 20 ID (A) 25 -60 60 120 180 Tj (°C) Tj = 25 °C R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data 0 Rev. 01 — 08 March 2004 6 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa32 5 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 03aa35 10-1 0 60 120 Tj (°C) 180 min 0 2 typ max 4 VGS (V) 6 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ap91 104 C (pF) Ciss 103 Coss 102 Crss 10 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data Rev. 01 — 08 March 2004 7 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03ap90 25 IS (A) 20 03ap92 10 VGS = 0 V VGS ID = 15 A (V) Tj = 25 °C 8 100 V VDD = 40 V 160 V 15 6 10 4 175 °C Tj = 25 °C 5 2 0 0 0 0.3 0.6 0.9 1.2 VSD (V) Tj = 25 °C and 175 °C; VGS = 0 V 0 20 30 40 QG (nC) ID = 15 A; VDD = 40 V, 100 V and 160 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data 10 Rev. 01 — 08 March 2004 8 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 7. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E A2 A A1 b2 E1 mounting base D1 D HE L2 2 L1 L 1 3 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1(1) A2 b b1 b2 c D D1 min. E mm 2.38 2.22 0.65 0.45 0.93 0.73 0.89 0.71 1.1 0.9 5.46 5.26 0.4 0.2 6.22 5.98 4.0 6.73 6.47 E1 e e1 4.81 2.285 4.57 4.45 HE L L1 min. L2 w y max. 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 14. SOT428 (D-PAK). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data Rev. 01 — 08 March 2004 9 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 8. Revision history Table 6: Revision history Rev Date 01 20040308 CPCN Description - Product data (9397 750 12882) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Product data Rev. 01 — 08 March 2004 10 of 12 PHD22NQ20T Philips Semiconductors N-channel TrenchMOS™ standard level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12882 Rev. 01 — 08 March 2004 11 of 12 Philips Semiconductors PHD22NQ20T N-channel TrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 08 March 2004 Document order number: 9397 750 12882