74AUP1G132 Low-power 2-input NAND Schmitt trigger Rev. 02 — 15 June 2009 Product data sheet 1. General description The 74AUP1G132 provides the single 2-input NAND Schmitt trigger function which accept standard input signals. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The inputs switch at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT− is defined as the input hysteresis voltage VH. 2. Features n Wide supply voltage range from 0.8 V to 3.6 V n High noise immunity n ESD protection: u HBM JESD22-A114E Class 3A exceeds 5000 V u MM JESD22-A115-A exceeds 200 V u CDM JESD22-C101C exceeds 1000 V n Low static power consumption; ICC = 0.9 µA (maximum) n Latch-up performance exceeds 100 mA per JESD 78 Class II n Inputs accept voltages up to 3.6 V n Low noise overshoot and undershoot < 10 % of VCC n IOFF circuitry provides partial Power-down mode operation n Multiple package options n Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Applications n Wave and pulse shaper n Astable multivibrator n Monostable multivibrator. 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74AUP1G132GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 74AUP1G132GM −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm 74AUP1G132GF −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 5. Marking Table 2. Marking Type number Marking code[1] 74AUP1G132GW aE 74AUP1G132GM aE 74AUP1G132GF aE [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram 1 B 2 A 1 Y 4 A & 4 Y 2 B mna097 Fig 1. Logic symbol Fig 2. IEC logic symbol 74AUP1G132_2 Product data sheet 001aac532 mna098 Fig 3. Logic diagram © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 2 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 7. Pinning information 7.1 Pinning 74AUP1G132 74AUP1G132 B 1 A 2 GND 3 5 VCC B 1 6 VCC A 2 5 n.c. GND 4 Y 4 Y 001aac530 Fig 5. Pin configuration SOT886 (XSON6) B 1 6 VCC A 2 5 n.c. GND 3 4 Y 001aaf508 Transparent top view Transparent top view 001aac531 Fig 4. Pin configuration SOT353-1 (TSSOP5) 3 74AUP1G132 Fig 6. Pin configuration SOT891 (XSON6) 7.2 Pin description Table 3. Pin description Symbol Pin Description TSSOP5 XSON6 B 1 1 data input B A 2 2 data input A GND 3 3 ground (0 V) Y 4 4 data output Y n.c. - 5 not connected VCC 5 6 supply voltage 8. Functional description Table 4. Function table[1] Input Output A B L L H L H H H L H H H L [1] Y H = HIGH voltage level; L = LOW voltage level. 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 3 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current Conditions VI < 0 V [1] VO < 0 V [1] Min Max Unit −0.5 +4.6 V −50 - mA −0.5 +4.6 V −50 - mA −0.5 +4.6 V VO output voltage Active mode and Power-down mode IO output current VO = 0 V to VCC - ±20 mA ICC supply current - 50 mA IGND ground current −50 - mA Tstg storage temperature −65 +150 °C - 250 mW Tamb = −40 °C to +125 °C total power dissipation Ptot [2] [1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC supply voltage VI input voltage VO output voltage Conditions Max Unit 0.8 3.6 V 0 3.6 V Active mode 0 VCC V Power-down mode; VCC = 0 V 0 3.6 V −40 +125 °C Min Typ Max Unit IO = −20 µA; VCC = 0.8 V to 3.6 V VCC − 0.1 - - V ambient temperature Tamb Min 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Tamb = 25 °C VOH HIGH-level output voltage VI = VT+ or VT− IO = −1.1 mA; VCC = 1.1 V 0.75 × VCC - - V IO = −1.7 mA; VCC = 1.4 V 1.11 - - V IO = −1.9 mA; VCC = 1.65 V 1.32 - - V IO = −2.3 mA; VCC = 2.3 V 2.05 - - V IO = −3.1 mA; VCC = 2.3 V 1.9 - - V IO = −2.7 mA; VCC = 3.0 V 2.72 - - V IO = −4.0 mA; VCC = 3.0 V 2.6 - - V 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 4 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VOL VI = VT+ or VT− LOW-level output voltage II input leakage current Min Typ Max Unit IO = 20 µA; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.31 V IO = 1.9 mA; VCC = 1.65 V - - 0.31 V IO = 2.3 mA; VCC = 2.3 V - - 0.31 V IO = 3.1 mA; VCC = 2.3 V - - 0.44 V IO = 2.7 mA; VCC = 3.0 V - - 0.31 V IO = 4.0 mA; VCC = 3.0 V - - 0.44 V VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.1 µA IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.2 µA ∆IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - ±0.2 µA ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.5 µA ∆ICC additional supply current VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V - - 40 µA CI input capacitance VI = GND or VCC; VCC = 0 V to 3.6 V - 1.1 - pF CO output capacitance VO = GND; VCC = 0 V - 1.7 - pF IO = −20 µA; VCC = 0.8 V to 3.6 V VCC − 0.1 - - V [1] Tamb = −40 °C to +85 °C VOH VOL HIGH-level output voltage LOW-level output voltage VI = VT+ or VT− IO = −1.1 mA; VCC = 1.1 V 0.7 × VCC - - V IO = −1.7 mA; VCC = 1.4 V 1.03 - - V IO = −1.9 mA; VCC = 1.65 V 1.30 - - V IO = −2.3 mA; VCC = 2.3 V 1.97 - - V IO = −3.1 mA; VCC = 2.3 V 1.85 - - V IO = −2.7 mA; VCC = 3.0 V 2.67 - - V IO = −4.0 mA; VCC = 3.0 V 2.55 - - V VI = VT+ or VT− IO = 20 µA; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.37 V IO = 1.9 mA; VCC = 1.65 V - - 0.35 V IO = 2.3 mA; VCC = 2.3 V - - 0.33 V IO = 3.1 mA; VCC = 2.3 V - - 0.45 V IO = 2.7 mA; VCC = 3.0 V - - 0.33 V IO = 4.0 mA; VCC = 3.0 V - - 0.45 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.5 µA IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.5 µA 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 5 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit ∆IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - ±0.6 µA ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.9 µA ∆ICC additional supply current VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V - - 50 µA [1] Tamb = −40 °C to +125 °C VOH HIGH-level output voltage LOW-level output voltage VOL II input leakage current VI = VT+ or VT− IO = −20 µA; VCC = 0.8 V to 3.6 V VCC − 0.11 - - V IO = −1.1 mA; VCC = 1.1 V 0.6 × VCC - - V IO = −1.7 mA; VCC = 1.4 V 0.93 - - V IO = −1.9 mA; VCC = 1.65 V 1.17 - - V IO = −2.3 mA; VCC = 2.3 V 1.77 - - V IO = −3.1 mA; VCC = 2.3 V 1.67 - - V IO = −2.7 mA; VCC = 3.0 V 2.40 - - V IO = −4.0 mA; VCC = 3.0 V 2.30 - - V IO = 20 µA; VCC = 0.8 V to 3.6 V - - 0.11 V VI = VT+ or VT− IO = 1.1 mA; VCC = 1.1 V - - 0.33 × VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.41 V IO = 1.9 mA; VCC = 1.65 V - - 0.39 V IO = 2.3 mA; VCC = 2.3 V - - 0.36 V IO = 3.1 mA; VCC = 2.3 V - - 0.50 V IO = 2.7 mA; VCC = 3.0 V - - 0.36 V IO = 4.0 mA; VCC = 3.0 V - - 0.50 V VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.75 µA IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.75 µA ∆IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - ±0.75 µA ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 1.4 µA ∆ICC additional supply current VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V - - 75 µA [1] [1] One input at VCC − 0.6 V, other input at VCC or GND. 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 6 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 12. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 8. Symbol Parameter 25 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min - 22.5 - - - - ns VCC = 1.1 V to 1.3 V 2.6 6.3 13.4 2.4 15.1 16.6 ns VCC = 1.4 V to 1.6 V 2.2 4.6 8.2 1.9 9.7 10.7 ns VCC = 1.65 V to 1.95 V 1.9 3.9 6.6 1.7 7.9 8.7 ns VCC = 2.3 V to 2.7 V 1.7 3.2 5.3 1.5 6.2 6.8 ns VCC = 3.0 V to 3.6 V 1.6 2.9 4.7 1.4 5.6 6.2 ns - 26.1 - - - - ns VCC = 1.1 V to 1.3 V 3.0 7.2 15.4 2.7 17.3 19.0 ns VCC = 1.4 V to 1.6 V 2.5 5.2 9.3 2.2 11.0 12.1 ns VCC = 1.65 V to 1.95 V 2.3 4.5 7.5 2.0 9.0 9.9 ns VCC = 2.3 V to 2.7 V 2.1 3.8 6.1 1.8 7.2 7.9 ns VCC = 3.0 V to 3.6 V 2.0 3.5 5.5 1.8 6.5 7.2 ns - 29.6 - - - - ns VCC = 1.1 V to 1.3 V 3.3 8.0 17.2 3.0 19.4 21.3 ns VCC = 1.4 V to 1.6 V 2.8 5.8 10.4 2.5 12.3 13.5 ns VCC = 1.65 V to 1.95 V 2.6 5.0 8.3 2.3 10.0 11.0 ns VCC = 2.3 V to 2.7 V 2.3 4.2 6.7 2.1 7.9 8.7 ns VCC = 3.0 V to 3.6 V 2.2 3.9 6.1 2.0 7.3 8.0 ns - 39.9 - - - - ns VCC = 1.1 V to 1.3 V 4.3 10.2 22.6 3.8 25.4 27.9 ns VCC = 1.4 V to 1.6 V 3.6 7.3 13.3 3.2 15.8 17.4 ns VCC = 1.65 V to 1.95 V 3.2 6.3 10.6 2.9 12.8 14.1 ns VCC = 2.3 V to 2.7 V 3.0 5.3 8.5 2.7 10.1 11.1 ns VCC = 3.0 V to 3.6 V 2.8 5.0 7.8 2.7 9.2 10.1 ns Max Max (85 °C) (125 °C) CL = 5 pF tpd propagation delay A or B to Y; see Figure 7 [2] VCC = 0.8 V CL = 10 pF tpd propagation delay A or B to Y; see Figure 7 [2] VCC = 0.8 V CL = 15 pF tpd propagation delay A or B to Y; see Figure 7 [2] VCC = 0.8 V CL = 30 pF tpd propagation delay A or B to Y; see Figure 7 VCC = 0.8 V [2] 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 7 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 8. Symbol Parameter 25 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min VCC = 0.8 V - 2.6 - - - - pF VCC = 1.1 V to 1.3 V - 2.9 - - - - pF VCC = 1.4 V to 1.6 V - 3.0 - - - - pF VCC = 1.65 V to 1.95 V - 3.2 - - - - pF VCC = 2.3 V to 2.7 V - 3.8 - - - - pF VCC = 3.0 V to 3.6 V - 4.4 - - - - pF Max Max (85 °C) (125 °C) CL = 5 pF, 10 pF, 15 pF and 30 pF power dissipation capacitance CPD [3] fi = 1 MHz; VI = GND to VCC [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. 13. Waveforms VI VM A, B input GND t PHL t PLH VOH VM Y output mna612 VOL Measurement points are given in Table 9. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 7. The data input (A or B) to output (Y) propagation delays Table 9. Measurement points Supply voltage Output Input VCC VM VM VI tr = tf 0.8 V to 3.6 V 0.5 × VCC 0.5 × VCC VCC ≤ 3.0 ns 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 8 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger VCC VEXT 5 kΩ G VI VO DUT RT CL RL 001aac521 Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 8. Load circuitry for switching times Table 10. Test data Supply voltage Load VEXT VCC CL 0.8 V to 3.6 V 5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ open [1] RL [1] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ GND 2 × VCC For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ. 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 9 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 14. Transfer characteristics Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 8. Symbol Parameter VT+ VT− VH 25 °C Conditions positive-going threshold voltage negative-going threshold voltage −40 °C to +125 °C Unit Min Typ Max Min Max (85 °C) Max (125 °C) VCC = 0.8 V 0.30 - 0.60 0.30 0.60 0.62 V VCC = 1.1 V 0.53 - 0.90 0.53 0.90 0.92 V see Figure 9 and Figure 10 VCC = 1.4 V 0.74 - 1.11 0.74 1.11 1.13 V VCC = 1.65 V 0.91 - 1.29 0.91 1.29 1.31 V VCC = 2.3 V 1.37 - 1.77 1.37 1.77 1.80 V VCC = 3.0 V 1.88 - 2.29 1.88 2.29 2.32 V VCC = 0.8 V 0.10 - 0.60 0.10 0.60 0.60 V VCC = 1.1 V 0.26 - 0.65 0.26 0.65 0.65 V VCC = 1.4 V 0.39 - 0.75 0.39 0.75 0.75 V VCC = 1.65 V 0.47 - 0.84 0.47 0.84 0.84 V VCC = 2.3 V 0.69 - 1.04 0.69 1.04 1.04 V VCC = 3.0 V 0.88 - 1.24 0.88 1.24 1.24 V VCC = 0.8 V 0.07 - 0.50 0.07 0.50 0.50 V VCC = 1.1 V 0.08 - 0.46 0.08 0.46 0.46 V see Figure 9 and Figure 10 hysteresis voltage (VT+ − VT−); see Figure 9, Figure 10, Figure 11 and Figure 12 VCC = 1.4 V 0.18 - 0.56 0.18 0.56 0.56 V VCC = 1.65 V 0.27 - 0.66 0.27 0.66 0.66 V VCC = 2.3 V 0.53 - 0.92 0.53 0.92 0.92 V VCC = 3.0 V 0.79 - 1.31 0.79 1.31 1.31 V 15. Waveforms transfer characteristics VT+ VO VI VH VT− VO VI VH VT− VT+ Fig 9. Transfer characteristic mna207 mna208 VT+ and VT− limits at 70 % and 20 %. Fig 10. Definition of VT+, VT− and VH 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 10 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 001aad691 240 ICC (µA) 160 80 0 0 0.4 0.8 1.2 1.6 2.0 VI (V) Fig 11. Typical transfer characteristics; VCC = 1.8 V 001aad692 1200 ICC (µA) 800 400 0 0 1.0 2.0 3.0 VI (V) Fig 12. Typical transfer characteristics; VCC = 3.0 V 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 11 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 16. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula: Padd = fi × (tr × ∆ICC(AV) + tf × ∆ICC(AV)) × VCC where: Padd = additional power dissipation (µW); fi = input frequency (MHz); tr = input rise time (ns); 10 % to 90 %; tf = input fall time (ns); 90 % to 10 %; ∆ICC(AV) = average additional supply current (µA). Average ∆ICC(AV) differs with positive or negative input transitions, as shown in Figure 13. 001aad027 0.3 ∆ICC(AV) (mA) (1) 0.2 (2) 0.1 0 0.8 1.8 2.8 3.8 VCC (V) (1) Positive-going edge. (2) Negative-going edge. Linear change of VI between 0.8 V and 2.0 V. All values given are typical, unless otherwise specified. Fig 13. Average ICC as a function of VCC 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 12 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 17. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm E D SOT353-1 A X c y HE v M A Z 5 4 A2 A (A3) A1 θ 1 Lp 3 L e w M bp detail X e1 0 1.5 3 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e e1 HE L Lp v w y Z(1) θ mm 1.1 0.1 0 1.0 0.8 0.15 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 1.3 2.25 2.0 0.425 0.46 0.21 0.3 0.1 0.1 0.60 0.15 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC JEITA MO-203 SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 14. Package outline SOT353-1 (TSSOP5) 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 13 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 e1 4 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 15. Package outline SOT886 (XSON6) 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 14 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm 1 SOT891 b 3 2 4× (1) L L1 e 6 5 4 e1 e1 6× A (1) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 max b D E e e1 L L1 mm 0.5 0.04 0.20 0.12 1.05 0.95 1.05 0.95 0.55 0.35 0.35 0.27 0.40 0.32 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 SOT891 Fig 16. Package outline SOT891 (XSON6) 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 15 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 18. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 19. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes 74AUP1G132_2 20090615 Product data sheet - 74AUP1G132_1 Modifications: 74AUP1G132_1 • Table 7: the conditions for HIGH-level output voltage and LOW-level output voltage have been changed. 20061020 Product data sheet 74AUP1G132_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 16 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 20. Legal information 20.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 20.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 20.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 20.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 21. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74AUP1G132_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 17 of 18 74AUP1G132 NXP Semiconductors Low-power 2-input NAND Schmitt trigger 22. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 13 14 15 16 17 18 19 20 20.1 20.2 20.3 20.4 21 22 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Transfer characteristics. . . . . . . . . . . . . . . . . . 10 Waveforms transfer characteristics . . . . . . . . 10 Application information. . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 June 2009 Document identifier: 74AUP1G132_2