BUJD203A NPN power transistor with integrated diode Rev. 02 — 2 December 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability Very low switching and conduction losses 1.3 Applications DC-to-DC converters Inverters Electronic lighting ballasts Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current see Figure 1; see Figure 2; DC; see Figure 4 - - 4 A Ptot total power dissipation see Figure 3; Tmb ≤ 25 °C - - 80 W VCESM collector-emitter peak voltage VBE = 0 V - - 850 V IC = 500 mA; VCE = 5 V; see Figure 11; Tj = 25 °C 13 21 32 VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 11 - 12.5 - 400 450 Static characteristics hFE VCEOsus DC current gain collector-emitter IB = 0 A; LC = 25 mH; sustaining voltage IC = 10 mA; see Figure 6; see Figure 7 - V BUJD203A NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector Simplified outline Graphic symbol C mb 3 E emitter mb C mounting base; connected to collector B E sym131 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number BUJD203A BUJD203A Product data sheet Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 850 V VCBO collector-base voltage IE = 0 A - 850 V VCEO collector-emitter voltage IB = 0 A - 425 V IC collector current DC; see Figure 1; see Figure 2; see Figure 4 - 4 A ICM peak collector current see Figure 1; see Figure 2; see Figure 4 - 8 A IB base current DC - 2 A IBM peak base current - 4 A Ptot total power dissipation - 80 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C Tmb ≤ 25 °C; see Figure 3 001aac000 10 VCC IC (A) LC VCL(CE) probe point 8 IBon VBB 6 LB DUT 001aab999 4 2 0 0 Fig 1. 200 400 600 800 1000 VCEclamp (V) Reverse bias safe operating area BUJD203A Product data sheet Fig 2. Test circuit for reverse bias safe operating area All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 001aab993 120 Pder (%) 80 40 0 0 40 80 120 160 Tmb (°C) Fig 3. Normalized total power dissipation as a function of mounting base temperature 001aac001 102 IC (A) duty cycle = 0.01 10 ICM(max) IC(max) II(3) (1) 1 (2) 10−1 tp = 20 μs 50 μs 100 μs 200 μs 500 μs DC I(3) 10−2 III(3) 10−3 1 102 10 103 VCEclamp (V) 1) Ptot maximum and Ptot peak maximum lines 2) Second breakdown limits 3) I = Region of permissable DC operation II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 1.56 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10−1 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics collector-emitter cut-off VBE = 0 V; VCE = 850 V; Tj = 125 °C current VBE = 0 V; VCE = 850 V; Tj = 25 °C [1] - - 2 mA [1] - - 1 mA ICBO collector-base cut-off current VCB = 850 V; IE = 0 A [1] - - 1 mA ICEO collector-emitter cut-off VCE = 425 V; IB = 0 A current [1] - - 0.1 mA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A - - 10 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 6; see Figure 7 400 450 - V VCEsat collector-emitter saturation voltage IC = 3 A; IB = 0.6 A; see Figure 8; see Figure 9 - 0.29 1 V VBEsat base-emitter saturation IC = 3 A; IB = 0.6 A; see Figure 10 voltage - 0.99 1.5 V VF forward voltage IF = 2 A; Tj = 25 °C - 1.04 1.5 V hFE DC current gain IC = 1 mA; VCE = 5 V; Tmb = 25 °C; see Figure 11 10 15 32 IC = 500 mA; VCE = 5 V; Tj = 25 °C; see Figure 11 13 21 32 IC = 2 A; VCE = 5 V; Tmb = 25 °C; see Figure 11 11 16 22 IC = 3 A; VCE = 5 V; Tmb = 25 °C; see Figure 11 - 12.5 - ICES Dynamic characteristics ton turn-on time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 - 0.52 0.6 µs ts storage time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 - 2.7 3.3 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 14; see Figure 15 - 1.2 1.4 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 - - 1.8 µs BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit tf fall time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 - 0.3 0.35 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 - - 0.12 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 14; see Figure 15 - 0.03 0.06 µs [1] Measured with half-sine wave voltage (curve tracer) IC (mA) 50 V 100 Ω to 200 Ω horizontal oscilloscope 250 vertical 6V 300 Ω 1Ω 100 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 6. Test circuit for collector-emitter sustaining voltage Oscilloscope display for collector-emitter sustaining voltage test waveform 001aab995 2.0 VCEsat (V) Fig 7. 001aab997 VCEsat (V) 0.5 IC = 1 A 2A 3A 4A 1.6 0.4 1.2 0.3 0.8 0.2 0.4 0 10−2 0.1 10−1 1 0 10−1 10 Fig 8. Collector-emitter saturation voltage as a function of base current; typical values BUJD203A Product data sheet 1 10 IC (A) IB (A) Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 001aab996 1.4 VBEsat (V) 1.2 001aab994 102 Tj = 25 °C hFE 1.0 VCE = 5 V 0.8 10 1V 0.6 0.4 0.2 0 10−1 1 1 10−2 10 10−1 1 10 IC (A) IC (A) Fig 10. Base-emitter saturation voltage as a function of collector current; typical values Fig 11. DC current gain as a function of collector current; typical values IC VCC ICon 90 % 90 % RL VIM 0 RB DUT 10 % tp t tf T 001aab989 ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff Fig 12. Test circuit for resistive load switching BUJD203A Product data sheet 001aab990 Fig 13. Switching times waveforms for resistive load All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode IC VCC ICon 90 % LC IBon VBB LB DUT 001aab991 10 % t tf IB ts toff IBon t −IBoff 001aab992 Fig 14. Test circuit for inductive load switching BUJD203A Product data sheet Fig 15. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 16. Package outline SOT78 (TO-220AB) BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUJD203A v.2 20101202 Product data sheet - BUJD203A v.1 Modifications: BUJD203A v.1 BUJD203A Product data sheet • Data sheet status changed from Preliminary to Product. 20100909 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 - © NXP B.V. 2010. All rights reserved. 11 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUJD203A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 December 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BUJD203A NXP Semiconductors NPN power transistor with integrated diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 December 2010 Document identifier: BUJD203A