Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit buffer/driver (3-State) FEATURES • • • • • 16-bit universal bus interface 3-State buffers Output capability: +64mA/-32mA TTL input and output switching levels Input and output interface capability to systems at 5V supply • Bus-hold data inputs eliminate the need for external pull-up resistors to hold unused inputs 74LVT16541A • Live insertion/extraction permitted • Power-up 3-State • No bus current loading when output is tied to 5V bus • Latch-up protection exceeds 500mA per JEDEC JC40.2 Std 17 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model DESCRIPTION The LVT16541A is a high-performance BiCMOS product designed for VCC operation at 3.3V. This device can be used as two octal buffers or one 16-bit buffer. The device is ideal for driving bus lines. QUICK REFERENCE DATA SYMBOL CONDITIONS Tamb = 25°C; GND = 0V PARAMETER TYPICAL UNIT tPLH tPHL Propagation delay nAx to nYx CL = 50pF; VCC = 3.3V CIN Input capacitance nOEx VI = 0V or 3.0V COUT Output pin capacitance Outputs disabled; VO = 0V or 3.0V 10 pF ICCZ Total supply current Outputs disabled; VCC = 3.6V 100 µA ns 4 pF ORDERING INFORMATION PACKAGES TEMPERATURE RANGE ORDER CODE DRAWING NUMBER 48-Pin Plastic Shrink Small Outline (SSOP) Type III –40°C to +85°C 74LVT16541ADL SOT370-1 48-Pin Plastic Thin Shrink Small Outline (TSSOP) Type II –40°C to +85°C 74LVT16541ADGG SOT362-1 LOGIC SYMBOL (IEEE/IEC) LOGIC SYMBOL 1OE0 1OE1 1 2OE0 48 1OE1 24 25 1 1A0 1A1 47 2 46 3 44 5 43 6 1Y0 2A0 1Y1 2A1 36 13 35 14 33 16 32 17 48 2Y0 1A3 1A4 1A5 1A6 1A7 41 8 40 9 38 11 37 12 July 1994 1Y2 2A2 1Y3 2A3 1Y4 2A4 1Y5 2A5 1Y6 2A6 1Y7 2A7 30 19 29 20 27 22 26 23 EN1 25 & EN2 2Y1 47 1A2 24 & 2Y2 2∇ 2∇ 2 36 46 3 35 13 14 44 5 33 16 43 6 32 17 41 8 30 19 40 9 29 20 38 11 27 22 37 12 26 23 2Y3 2Y4 2Y5 2Y6 2Y7 1 Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit buffer/driver (3-State) 74LVT16541A PIN CONFIGURATION 1OE0 1 48 1OE1 1A0 2 47 1Y0 1A1 3 46 1Y1 GND 4 45 GND 1A2 5 44 1Y2 1A3 6 43 1Y3 VCC 7 42 VCC 1A4 8 41 1Y4 1A5 9 40 1Y5 GND 10 39 GND 1A6 11 38 1Y6 1A7 12 37 1Y7 2A0 13 36 2Y0 2A1 14 35 2Y1 GND 15 34 GND 2A2 16 33 2Y2 2A3 17 32 2Y3 VCC 18 31 VCC 2A4 19 30 2Y4 2A5 20 29 2Y5 GND 21 28 GND 2A6 22 27 2Y6 2A7 23 26 2Y7 2OE0 24 25 2OE1 PIN DESCRIPTION PIN NUMBER SYMBOL NAME AND FUNCTION 47, 46, 44, 43, 41, 40, 38, 37, 36, 35, 33, 32, 30, 29, 27, 26 1A0–1A7 2A0–2A7 Data inputs 2, 3, 5, 6, 8, 9, 11, 12,13, 14, 16, 17, 19, 20, 22, 23 1Y0–1Y7 2Y0–2Y7 Data outputs 1, 48 24, 25 1OE0, 1OE1, 2OE0, 2OE1 4, 10, 15, 21, 28, 34, 39, 45 GND Ground (0V) 7, 18, 31, 42 VCC Positive supply voltage FUNCTION TABLE INPUTS OUTPUTS nOE0 nOE1 nAx nYx L L X H L L H X L H X X L H Z Z H = High voltage level L = Low voltage level X = Don’t care Z = High Impedance “off ” state July 1994 2 Output enables Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit buffer/driver (3-State) 74LVT16541A ABSOLUTE MAXIMUM RATINGS1,2 SYMBOL VCC IIK PARAMETER RATING UNIT –0.5 to +4.6 V –50 mA –0.5 to +7.0 V VO < 0 –50 mA Output in Off or High state –0.5 to +7.0 V Output in Low state 128 Output in High state –64 DC supply voltage DC input diode current VI < 0 voltage3 VI DC input IOK DC output diode current VOUT CONDITIONS DC output voltage3 IOUT DC output current Tstg Storage temperature range mA –65 to +150 °C NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C. 3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. RECOMMENDED OPERATING CONDITIONS SYMBOL VCC PARAMETER LIMITS DC supply voltage UNIT MIN MAX 2.7 3.6 V 0 5.5 V VI Input voltage VIH High-level input voltage VIL Input voltage 0.8 V IOH High-level output current –32 mA Low-level output current 32 Low-level output current; current duty cycle ≤ 50%; f ≥ 1kHz 64 IOL ∆t/∆v Input transition rise or fall rate; Outputs enabled Tamb Operating free-air temperature range July 1994 2.0 mA –40 3 V 10 ns/V +85 °C Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit buffer/driver (3-State) 74LVT16541A DC ELECTRICAL CHARACTERISTICS LIMITS SYMBOL PARAMETER TEST CONDITIONS Temp = -40°C to +85°C MIN VIK Input clamp voltage VCC = 2.7V; IIK = –18mA VOL High-level output voltage Low-level output voltage Input leakage current VCC = 2.7V; IOH = –8mA 2.4 VCC = 3.0V; IOH = –32mA 2.0 IHOLD Output off current Bus Hold current A inputs V VCC = 2.7V; IOL = 100µA 0.2 VCC = 2.7V; IOL = 24mA 0.5 VCC = 3.0V; IOL = 16mA 0.4 VCC = 3.0V; IOL = 32mA 0.5 VCC = 3.0V; IOL = 64mA 0.55 10 VCC = 3.6V; VI = VCC Data V ±1 Control pins VCC = 0 or 3.6V; VI = 5.5V VCC = 3.6V; VI = 0 IOFF V VCC-0.2 VCC = 3.6V; VI = VCC or GND II UNIT MAX –1.2 VCC = 2.7 to 3.6V; IOH = –100µA VOH TYP1 1 pins4 µA -5 ±100 VCC = 0V; VI or VO = 0 to 4.5V µA VCC = 3V; VI = 0.8V 75 µA VCC = 3V; VI = 2.0V –75 µA Current into an output in the High state when VO > VCC VO = 5.5V; VCC = 3.0V 125 µA Power up/down 3-State output current3 VCC ≤ 1.2V; VO = 0.5V to VCC; VI = GND or VCC; OE/OE = Don’t care ±100 µA IOZH 3-State output High current VCC = 3.6V; VO = 3.0V; VI = VIL or VIH 5 µA IOZL 3-State output Low current VCC = 3.6V; VO = 0.5V; VI = VIL or VIH –5 µA IEX IPU/PD ICCH ICCL VCC = 3.6V; Outputs High, VI = GND or VCC, IO = 0 Quiescent supply current ICCZ ∆ICC Additional supply current per input pin2 0.13 0.12 VCC = 3.6V; Outputs Low, VI = GND or VCC, IO = 0 3.5 5 VCC = 3.6V; Outputs Disabled; VI = GND or VCC, IO = 0 0.13 0.12 VCC = 3V to 3.6V; One input at VCC-0.6V, Other inputs at VCC or GND 0.2 mA mA NOTES: 1. All typical values are at VCC = 3.3V and Tamb = 25°C. 2. This is the increase in supply current for each input at the specified voltage level other than VCC or GND 3. This parameter is valid for any VCC between 0V and 1.2V with a transition time of up to 10msec. From VCC = 1.2V to VCC = 3.3V ± 0.3V a transition time of 100µsec is permitted. This parameter is valid for Tamb = 25°C only. 4. Unused pins at VCC or GND. AC CHARACTERISTICS GND = 0V; tR = tF = 2.5ns; CL = 50pF; RL = 500Ω; Tamb = –40°C to +85°C. LIMITS SYMBOL PARAMETER WAVEFORM MIN VCC = 3.3V ±0.3V VCC = 2.7V TYP1 MAX MAX UNIT tPLH tPHL Propagation delay nAx to nYx 1 ns tPZH tPZL Output enable time to High and Low level 2 ns tPHZ tPLZ Output disable time from High and Low Level 2 ns NOTE: 1. All typical values are at VCC = 3.3V and Tamb = 25°C. July 1994 4 Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit buffer/driver (3-State) 74LVT16541A AC WAVEFORMS VM = 1.5V, VIN = GND to 2.7V nOE INPUT 2.7V 1.5V 1.5V 2.7V nAx INPUT 0V 1.5V 1.5V tPLZ tPZL 3.0V 0V tPLH 1.5V nYx OUTPUT tPHL VOL + 0.3V VOH nYx OUTPUT 1.5V VOL tPHZ tPZH VOH 1.5V nYx OUTPUT VOL VOH – 0.3V 1.5V 0V Waveform 1. Waveforms Showing the Input to Output Propagation Delays Waveform 2. Waveforms Showing the 3-State Output Enable and Disable Times TEST CIRCUIT AND WAVEFORMS 6.0V VCC Open VIN VOUT PULSE GENERATOR tW 90% RL GND VM NEGATIVE PULSE 10% 0V tTHL (tF) CL tTLH (tR) tTLH (tR) RL tTHL (tF) 90% POSITIVE PULSE Test Circuit for 3-State Outputs AMP (V) 90% VM VM 10% 10% tW SWITCH POSITION TEST SWITCH tPLZ/tPZL 6V tPLH/tPHL Open tPHZ/tPZH GND 0V VM = 1.5V Input Pulse Definition INPUT PULSE REQUIREMENTS DEFINITIONS FAMILY RL = Load resistor; see AC CHARACTERISTICS for value. CL = Load capacitance includes jig and probe capacitance: See AC CHARACTERISTICS for value. 74LVT16 RT = Termination resistance should be equal to ZOUT of pulse generators. July 1994 AMP (V) VM 10% D.U.T RT 90% 5 Amplitude Rep. Rate 2.7V ≤10MHz tW tR tF 500ns ≤2.5ns ≤2.5ns