PMEG6010CPA 1 A low VF dual MEGA Schottky barrier rectifier Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. 1.2 Features and benefits Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 60 V Low forward voltage Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability AEC-Q101 qualified 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Battery chargers for mobile equipment 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions average forward current square wave; δ = 0.5; f = 20 kHz Min Typ Max Unit - - 1 A Per diode IF(AV) Tamb ≤ 110 °C Tsp ≤ 140 °C VR reverse voltage VF forward voltage IR reverse current [1] [1] - - 1 A - - 60 V IF = 1 A - 490 540 mV VR = 60 V - 33 100 μA Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 anode diode 1 2 anode diode 2 3 common cathode Graphic symbol 3 3 1 2 1 Transparent top view 2 006aaa438 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG6010CPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 × 2 × 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PMEG6010CPA AP 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj ≤ 25 °C - 60 V IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz - 1 A Tsp ≤ 140 °C - 1 A - 7 A - 9 A Per diode Tamb ≤ 110 °C PMEG6010CPA Product data sheet IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 IFSM non-repetitive peak forward current square wave; tp = 8 ms All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 [1] [2] © NXP B.V. 2010. All rights reserved. 2 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit [3][4] - 500 mW [3][5] - 960 mW [1][3] - 1800 mW Per device, one diode loaded total power dissipation Ptot Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Tj = 25 °C prior to surge. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [3] - - 250 K/W [4] - - 130 K/W [5] - - 70 K/W [6] - - 12 K/W Per device, one diode loaded Rth(j-a) Rth(j-sp) PMEG6010CPA Product data sheet thermal resistance from junction to ambient in free air thermal resistance from junction to solder point [1][2] [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. [6] Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac439 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac440 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.1 10 0 1 10−3 0.33 0.2 0.05 0.02 0.01 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for cathode 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac441 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 100 mA - 325 - mV IF = 1 A - 490 540 mV VR = 10 V - 2 - μA VR = 60 V - 33 100 μA - 120 - pF - 40 - pF - 40 - ns Per diode VF IR Cd reverse current diode capacitance f = 1 MHz VR = 1 V VR = 10 V trr [1] PMEG6010CPA Product data sheet reverse recovery time [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac442 10 IF (A) 1 006aac443 10−2 IR (A) 10−3 (1) (2) (1) 10−4 (2) 10−1 10−5 (3) (3) 10−2 (4) 10−6 (5) 10−7 10−3 10−8 (4) 10−4 0.0 10−9 0.2 0.4 0.6 0.8 1.0 0 20 VF (V) 40 60 VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig 4. Forward current as a function of forward voltage; typical values Fig 5. Reverse current as a function of reverse voltage; typical values 006aac444 250 Cd (pF) 200 150 100 50 0 0 20 40 60 VR (V) f = 1 MHz; Tamb = 25 °C Fig 6. Diode capacitance as a function of reverse voltage; typical values PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac445 0.8 006aac446 0.75 (4) PF(AV) (W) PR(AV) (W) (3) 0.6 0.50 (1) (2) (2) 0.4 (1) (3) 0.25 0.2 (4) 0.0 0.0 0.00 0.5 1.0 1.5 0 20 40 IF(AV) (A) Tj = 150 °C Tj = 125 °C (1) δ = 0.1 (1) δ = 1 (2) δ = 0.2 (2) δ = 0.9 (3) δ = 0.5 (3) δ = 0.8 (4) δ = 1 (4) δ = 0.5 Fig 7. Average forward power dissipation as a function of average forward current; typical values 006aac447 1.5 Fig 8. Average reverse power dissipation as a function of reverse voltage; typical values 006aac448 1.5 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 1.0 1.0 (3) (3) (4) 0.5 (4) 0.5 0.0 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 Tj = 150 °C 125 150 175 Tamb (°C) (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Average forward current as a function of ambient temperature; typical values Product data sheet 100 Tj = 150 °C (1) δ = 1; DC PMEG6010CPA 75 FR4 PCB, mounting pad for cathode 1 cm2 FR4 PCB, standard footprint Fig 9. 60 VR (V) Fig 10. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac449 1.5 006aac450 1.5 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 1.0 1.0 (3) (3) (4) 0.5 0.5 (4) 0.0 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C Ceramic PCB, Al2O3, standard footprint Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 11. Average forward current as a function of ambient temperature; typical values PMEG6010CPA Product data sheet Fig 12. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Fig 13. Reverse recovery time test circuit and waveforms P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 14. Duty cycle definition The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 9. Package outline 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 15. Package outline SOT1061 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 PMEG6010CPA [1] PMEG6010CPA Product data sheet SOT1061 4 mm pitch, 8 mm tape and reel -115 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 11. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint SOT1061 PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG6010CPA v.1 20100825 Product data sheet - - PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 13 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 August 2010 Document identifier: PMEG6010CPA