PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z. 1.2 Features n n n n n n High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications n n n n n n LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 150 V IC collector current - - 1 A hFE DC current gain 100 250 - VCE = 10 V; IC = 50 mA PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Graphic symbol 4 2, 4 1 1 2 3 3 sym016 3. Ordering information Table 3. Ordering information Type number PBHV8115Z Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4. Marking Table 4. Marking codes Type number Marking code PBHV8115Z V8115Z PBHV8115Z_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 2 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 400 V VCEO collector-emitter voltage open base - 150 V VEBO emitter-base voltage open collector - 6 V IC collector current - 1 A ICM peak collector current single pulse; tp ≤ 1 ms - 2 A IBM peak base current single pulse; tp ≤ 1 ms - 400 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 0.7 W [2] - 1.4 W Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aab155 1600 (1) Ptot (mW) 1200 800 (2) 400 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves PBHV8115Z_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 3 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 175 K/W [2] - - 89 K/W - - 20 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aab156 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab157 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8115Z_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 4 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 120 V; IE = 0 A - - 100 nA VCB = 120 V; IE = 0 A; Tj = 150 °C - - 10 µA ICES collector-emitter cut-off VCE = 120 V; VBE = 0 V current - - 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 10 V 100 250 - IC = 50 mA IC = 100 mA VCEsat collector-emitter saturation voltage 100 250 - IC = 0.5 A [1] 50 160 - IC = 1 A [1] 10 30 - - 40 60 mV IC = 100 mA; IB = 10 mA - 33 50 mV IC = 1 A; IB = 200 mA [1] - 225 350 mV VBEsat base-emitter saturation IC = 1 A; IB = 200 mA voltage [1] - 1.1 1.2 V fT transition frequency VCE = 10 V; IE = 10 mA; f = 100 MHz - 30 - MHz Cc collector capacitance VCB = 20 V; IE = ie = 0 A; f = 1 MHz - 5.7 - pF Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz - 150 - pF td delay time - 7 - ns tr rise time VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = −0.1 A - 565 - ns ton turn-on time - 572 - ns ts storage time - 1530 - ns tf fall time - 700 - ns toff turn-off time - 2230 - ns [1] IC = 100 mA; IB = 20 mA Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBHV8115Z_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 5 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 006aab158 500 006aab159 2.0 IB (mA) = 300 IC (A) hFE 400 1.6 270 240 210 180 150 120 1.2 90 (1) 300 (2) 60 200 0.8 30 (3) 100 0.4 0 10−1 1 10 102 0 103 104 IC (mA) 0 1 2 3 4 5 VCE (V) Tamb = 25 °C VCE = 10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. DC current gain as a function of collector current; typical values Fig 5. 006aab160 1.2 VBE (V) Collector current as a function of collector-emitter voltage; typical values 006aab161 1.3 VBEsat (V) (1) 0.8 0.9 (1) (2) (2) (3) (3) 0.4 0.5 0 10−1 1 10 102 0.1 10−1 103 104 IC (mA) VCE = 10 V 1 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig 7. 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values PBHV8115Z_2 Product data sheet 102 IC/IB = 5 (2) Tamb = 25 °C Fig 6. 10 © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 6 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 006aab162 1 006aab163 10 VCEsat (V) VCEsat (V) 1 10−1 (1) (2) 10−1 (1) (2) 10−2 (3) (3) 10−2 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Collector-emitter saturation voltage as a function of collector current; typical values 006aab164 103 Fig 9. 102 102 10 10 1 (3) (3) 1 10 (1) (2) 1 (1) (2) 102 006aab165 103 RCEsat (Ω) 103 104 IC (mA) 10−1 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C IC/IB = 5 (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBHV8115Z_2 Product data sheet 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) 10−1 10−1 102 Tamb = 25 °C IC/IB = 5 Fig 8. 10 © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 7 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω oscilloscope 450 Ω R2 VI DUT R1 mlb826 Fig 12. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 4.6 3 0.8 0.6 Dimensions in mm 0.32 0.22 04-11-10 Fig 13. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBHV8115Z [1] Package SOT223 Description 8 mm pitch, 12 mm tape and reel 1000 4000 -115 -135 For further information and the availability of packing methods, see Section 14. PBHV8115Z_2 Product data sheet Packing quantity © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 8 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 14. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 15. Wave soldering footprint SOT223 (SC-73) PBHV8115Z_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 9 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV8115Z_2 20081209 Product data sheet - PBHV8115Z_1 Modifications: PBHV8115Z_1 • • • Table 5: IBM maximum value changed from 100 mA to 400 mA Figure 5: amended Section 13 “Legal information”: updated 20080205 Product data sheet PBHV8115Z_2 Product data sheet - - © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 10 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBHV8115Z_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 9 December 2008 11 of 12 PBHV8115Z NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 December 2008 Document identifier: PBHV8115Z_2