BGY787 750 MHz, 21.5 dB gain push-pull Rev. 08 — 1 April 2005 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features ■ ■ ■ ■ ■ Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability Excellent linearity 1.3 Applications ■ CATV systems operating in the frequency range of 40 MHz to 750 MHz 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 50 MHz 21 21.5 22 dB 21.5 22.5 - dB - 220 240 mA f = 750 MHz Itot [1] total current consumption (DC) VB = 24 V [1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier 2. Pinning information Table 2: Pinning Pin Description 1 input 2 common 3 common 5 +VB 7 common 8 common 9 output Simplified outline Symbol 5 1 3 5 7 9 1 9 2 3 7 8 sym095 3. Ordering information Table 3: Ordering information Type number BGY787 Package Name Description Version - rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Max Unit Vi RF input voltage - 60 dBmV Tstg storage temperature −40 +100 °C Tmb mounting base temperature −20 +100 °C 9397 750 14773 Product data sheet Min © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 2 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier 5. Characteristics Table 5: Characteristics at bandwidth 40 MHz to 750 MHz VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω. Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 50 MHz 21 21.5 22 dB f = 750 MHz 21.5 22.5 - dB SL slope cable equivalent f = 40 MHz to 750 MHz 0 1 1.5 dB FL flatness of frequency response f = 40 MHz to 750 MHz - ±0.2 ±0.5 dB s11 input return losses f = 40 MHz to 80 MHz 20 33 - dB f = 80 MHz to 160 MHz 18.5 30 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 640 MHz 15.5 22 - dB f = 640 MHz to 750 MHz 14 20.5 - dB output return losses s22 f = 40 MHz to 80 MHz 20 28.5 - dB f = 80 MHz to 160 MHz 18.5 27.5 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 640 MHz 15.5 22 - dB f = 640 MHz to 750 MHz 14 20 - dB ϕS21 phase response f = 50 MHz −45 - +45 deg CTB composite triple beat 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz - −54.5 −53 dB Xmod cross modulation 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz - −54 −52 dB CSO composite second order distortion 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz - −57.5 −53 dB d2 second order distortion Vo output voltage dim = −60 dB F noise figure [1] - −75 −63 dB [2] 61 63 - dBmV f = 50 MHz - 4 5 dB f = 450 MHz - - 5.5 dB f = 550 MHz - - 5.5 dB f = 600 MHz - - 6 dB - 5 6.5 dB - 220 240 mA f = 750 MHz [3] total current consumption (DC) Itot [1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. [2] Measure according to DIN45004B; fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo − 6 dB; fr = 749.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 738.25 MHz. [3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 3 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier Table 6: Characteristics at bandwidth 40 MHz to 770 MHz VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω. Symbol Parameter power gain Gp Conditions Min Typ Max Unit f = 50 MHz 21 21.5 22 dB f = 770 MHz 21.5 22.5 - dB dB SL slope cable equivalent f = 40 MHz to 770 MHz 0 1 1.5 FL flatness of frequency response f = 40 MHz to 770 MHz - ±0.2 ±0.5 dB s11 input return losses output return losses s22 f = 40 MHz to 80 MHz 20 33 - dB f = 80 MHz to 160 MHz 18.5 30 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 640 MHz 15.5 22.5 - dB f = 640 MHz to 770 MHz 14 20.5 - dB f = 40 MHz to 80 MHz 20 28.5 - dB f = 80 MHz to 160 MHz 18.5 27.5 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 640 MHz 15.5 22 - dB f = 640 MHz to 770 MHz 14 20 - dB +45 deg ϕS21 phase response f = 50 MHz −45 - CTB composite triple beat 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz - −54.5 −53 dB Xmod cross modulation 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz - −54 −52 dB CSO composite second order distortion 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz - −57.5 −53 dB d2 second order distortion [1] - −75 −63 dB [2] 61 63 - dBmV Vo output voltage dim = −60 dB F noise figure f = 50 MHz - 4 5 dB f = 450 MHz - - 5.5 dB f = 550 MHz - - 5.5 dB f = 600 MHz - - 6 dB - 5 6.5 dB - 220 240 mA f = 770 MHz [3] total current consumption (DC) Itot [1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. [2] Measure according to DIN45004B; fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo − 6 dB; fr = 749.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 738.25 MHz. [3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 4 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier Table 7: Characteristics at bandwidth 40 MHz to 600 MHz VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω. Symbol Parameter power gain Gp Conditions Min Typ Max Unit f = 50 MHz 21 21.5 22 dB f = 600 MHz 21.5 - - dB dB SL slope cable equivalent f = 40 MHz to 600 MHz 0 - 1.5 FL flatness of frequency response f = 40 MHz to 600 MHz - - ±0.3 dB s11 input return losses output return losses s22 f = 40 MHz to 80 MHz 20 33 - dB f = 80 MHz to 160 MHz 18.5 30 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 600 MHz 16 22.5 - dB f = 40 MHz to 80 MHz; 20 28.5 - dB f = 80 MHz to 160 MHz 18.5 27.5 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 600 MHz 16 22 - dB +45 deg ϕS21 phase response f = 50 MHz −45 - CTB composite triple beat 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz - −59.5 −58 dB Xmod cross modulation 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz - −55.5 −53 dB CSO composite second order distortion 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz - −64 −56 dB d2 second order distortion [1] - - −68 dB [2] 62.5 - - dBmV - - - dB - 220 240 mA Vo output voltage dim = −60 dB F noise figure see Table 5 [3] total current consumption (DC) Itot [1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz. [2] Measure according to DIN45004B; fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo − 6 dB; fr = 599.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 588.25 MHz. [3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 5 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier Table 8: Characteristics at bandwidth 40 MHz to 550 MHz VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω. Symbol Parameter power gain Gp Conditions Min Typ Max Unit f = 50 MHz 21 21.5 22 dB f = 550 MHz 21.5 - - dB SL slope cable equivalent f = 40 MHz to 550 MHz 0 - 1.5 dB FL flatness of frequency response f = 40 MHz to 550 MHz - - ±0.3 dB s11 input return losses output return losses s22 f = 40 MHz to 80 MHz 20 33 - dB f = 80 MHz to 160 MHz 18.5 30 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 550 MHz 16 22.5 - dB f = 40 MHz to 80 MHz 20 28.5 - dB f = 80 MHz to 160 MHz 18.5 27.5 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 550 MHz 16 22 - dB ϕS21 phase response f = 50 MHz −45 - +45 deg CTB composite triple beat 77 channels flat; Vo = 44 dBmV; measured at 547.25 MHz - −61 −60 dB Xmod cross modulation 77 channels flat; Vo = 44 dBmV; measured at 55.25 MHz - −56.5 −55 dB CSO composite second order distortion 77 channels flat; Vo = 44 dBmV; measured at 548.5 MHz - −65.5 −58 dB d2 second order distortion - - −70 dB [1] Vo output voltage dim = −60 dB F noise figure see Table 5 Itot total current consumption (DC) [2] [3] 63 - - dBmV - - - dB - 220 240 mA [1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. [2] Measure according to DIN45004B; fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo − 6 dB; fr = 549.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 538.25 MHz. [3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 6 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier Table 9: Characteristics at bandwidth 40 MHz to 450 MHz VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω. Symbol Parameter power gain Gp Conditions Min Typ 21.5 Max Unit f = 50 MHz 21 22 dB f = 450 MHz 21.5 - - dB SL slope cable equivalent f = 40 MHz to 450 MHz 0 - 1.5 dB FL flatness of frequency response f = 40 MHz to 450 MHz - - ±0.3 dB s11 input return losses output return losses s22 f = 40 MHz to 80 MHz 20 33 - dB f = 80 MHz to 160 MHz 18.5 30 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 450 MHz 16 22.5 - dB f = 40 MHz to 80 MHz 20 28.5 - dB f = 80 MHz to 160 MHz 18.5 27.5 - dB f = 160 MHz to 320 MHz 17 25 - dB f = 320 MHz to 450 MHz 16 22 - dB ϕS21 phase response f = 50 MHz −45 - +45 deg CTB composite triple beat 60 channels flat; Vo = 46 dBmV; measured at 445.25 MHz - - −59 dB Xmod cross modulation 60 channels flat; Vo = 46 dBmV; measured at 55.25 MHz - - −54 dB CSO composite second order distortion 60 channels flat; Vo = 46 dBmV; measured at 446.5 MHz - - −60 dB d2 second order distortion [1] - - −73 dB [2] 64 - - dBmV - - - dB - 220 240 mA Vo output voltage dim = −60 dB F noise figure see Table 5 [3] total current consumption (DC) Itot [1] fp = 55.25 MHz; Vp = 46 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz. [2] Measure according to DIN45004B; fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo − 6 dB; fr = 449.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 438.25 MHz. [3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 7 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 x M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F L min. p 4.15 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 3.85 0.38 Q max. q JEDEC q2 S U1 U2 W w x 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC REFERENCES IEC q1 JEITA EUROPEAN PROJECTION y Z max. 0.1 3.8 ISSUE DATE 99-02-06 04-02-04 SOT115J Fig 1. Package outline SOT115J 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 8 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier 7. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BGY787_8 20050401 Product data sheet - 9397 750 14773 BGY787_7 Modifications: • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. BGY787_7 20030516 Product specification - 9397 750 11198 BGY787_6 BGY787_6 20011031 Product specification - 9397 750 08811 BGY787_5 BGY787_5 19990330 Product specification - 9397 750 05455 BGY787_4 BGY787_4 19971124 Product specification - 9397 750 02951 BGY787_3 BGY787_3 19970414 Product specification - 9397 750 02155 - 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 9 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier 8. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions 10. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 11. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14773 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 1 April 2005 10 of 11 BGY787 Philips Semiconductors 750 MHz, 21.5 dB gain push-pull amplifier 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 April 2005 Document number: 9397 750 14773 Published in The Netherlands