1N5186 thru 1N5188, 1N5190 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/424 DESCRIPTION This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category 1” metallurgical bond. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 1N5186 thru 1N5190 series. • • • • • Voidless hermetically sealed glass package. Working Peak Reverse Voltage 100 to 600 volts. Internal “Category I ” metallurgical bond. JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/424. RoHS compliant versions available (commercial grade only). “B” Package APPLICATIONS / BENEFITS • Fast recovery 3 amp 100 to 600 volt rectifiers. • • • • • • • Military and other high-reliability applications. General rectifier applications including bridges, half-bridges, catch diodes, etc. High forward surge current capability. Extremely robust construction. Low thermal resistance. Controlled avalanche with peak reverse power capability. Inherently radiation hard as described in Microsemi “MicroNote 050”. MAXIMUM RATINGS Parameters/Test Conditions Symbol Junction and Storage Temperature TJ and TSTG (1) Thermal Resistance Junction-to-Lead R ӨJL o Forward Surge Current @ 8.3 ms half-sine, TA = +150 C I FSM V RWM Working Peak Reverse Voltage 1N5186 1N5187 1N5188 1N5190 o Average Rectified Forward Current @ TA = +25 C o @ TA = +150 C IO Maximum Reverse Recovery Time 1N5186 1N5187 1N5188 1N5190 t rr Solder Temperature @ 10 s TSP Value -65 to +175 20 80 100 200 400 600 3.0 0.700 150 200 250 400 260 A ns o C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 Tel: (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Notes: 1. At 3/8 inch (10 mm) lead length from body. T4-LDS-0216, Rev. 1 (111512) Unit o C o C/W A V ©2011 Microsemi Corporation Page 1 of 3 1N5186 thru 1N5188, 1N5190 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) over nickel (Ni) coat or RoHS compliant matte-tin (commercial grade only) over copper. MARKING: Body is coated and marked with part number. POLARITY: Cathode band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 797 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5186 e3 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol V (BR) V RWM VF IR t rr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. ELECTRICAL CHARACTERISTICS TYPE 1N5186 1N5187 1N5188 1N5190 T4-LDS-0216, Rev. 1 (111512) MINIMUM BREAKDOWN VOLTAGE FORWARD VOLTAGE V (BR) @ 100 µA V F @ 9 A (pulsed) MAXIMUM REVERSE CURRENT I R @ V RWM Volts MIN Volts MAX Volts 25 oC µA 100 oC µA 120 240 480 660 0.9 0.9 0.9 0.9 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 100 100 100 100 ©2011 Microsemi Corporation Page 2 of 3 1N5186 thru 1N5188, 1N5190 PACKAGE DIMENSIONS Symbol BD LD BL LL Dimension Inch Millimeters Min Max Min Max 0.115 0.155 2.92 3.94 0.038 0.042 0.97 1.07 0.150 0.300 3.81 7.62 1.00 1.50 25.40 38.10 Notes 3 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BD shall be measured at the largest diameter. The BL dimension shall include the entire body including slugs. 4. Dimension BL shall include the sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0216, Rev. 1 (111512) ©2011 Microsemi Corporation Page 3 of 3