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ARF448A(G)
ARF448B(G)
D
G
S
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO-247
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
140W
65MHz
The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 150 Volt, 40.68 MHz Characteristics:
¥
¥
¥
Low Cost Common Source RF Package.
Output Power = 140 Watts.
Very High Breakdown for Improved Ruggedness.
Gain = 15dB (Class C)
Low Thermal Resistance.
Efficiency = 75%
Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF448A/448B(G)
VDSS
Drain-Source Voltage
450
VDGO
Drain-Gate Voltage
450
ID
Continuous Drain Current @ TC = 25°C
UNIT
Volts
15
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
230
Watts
Junction to Case
0.55
°C/W
RqJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA)
450
VDS(ON) On State Drain Voltage
IDSS
IGSS
gfs
VGS(TH)
1
TYP
MAX
(I D(ON) = 7.5A, VGS = 10V)
3
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
Forward Transconductance (VDS = 25V, ID = 7.5A)
5
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
2
8.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
mA
nA
mhos
5
Volts
7-2003
BVDSS
Characteristic / Test Conditions
050-4908 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
ARF448A/448B(G)
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
TYP
MAX
1400
1700
150
200
f = 1 MHz
65
100
VGS = 15V
7
15
VDD = 0.5 VDSS
5
10
ID = ID[Cont.] @ 25°C
23
40
RG = 1.6W
12
25
MAX
VGS = 0V
VDS = 150V
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
h
y
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 40.68 MHz
13
15
dB
70
75
%
VGS = 0V
Drain Efficiency
Electrical Ruggedness VSWR 20:1
VDD = 150V
Pout = 140W
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
3000
Class C
VDD = 150V
25
CAPACITANCE (pf)
Pout = 250W
20
GAIN (dB)
Ciss
15
10
20
30
40
50
60 65
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Crss
1
5
10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
70
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250mSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
15
10
5
Coss
50
20
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
050-4908 Rev B
25
500
100
5
0
10
1000
10mS
OPERATION HERE
LIMITED BY RDS (ON)
10
100mS
1mS
5
10mS
1
.5
.1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
DC
ARF448A/448B(G)
40
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
0.7
f = 40.68 MHz
180
120
60
0
0
2
4
6
8
10
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
6.5V
20
6V
5.5V
10
5V
0
GPS, COMMON SOURCE AMPLIFIER GAIN
(dB)
POUT, POWER OUT (WATTS)
240
Class C
VDD = 150V
30
4.5V
0.6
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
300
VGS=8, 10 & 15V
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
17
Class C
VDD = 150V
16
f = 40.68 MHz
15
14
13
0
60
120
180
240
300
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
0.6
0.1
0.2
0.1
0.05
0.05
Note:
0.02
0.01
PDM
0.01
t1
SINGLE PULSE
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZqJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
2.0
13.5
27.0
40.0
65.0
Z in (W)
20.90 - j 9.2
2.40 - j 6.8
0.57 - j 2.6
0.31 - j 0.5
0.44 + j 1.9
Z OL (W)
56.00 - j 06.0
37.00 - j 26.0
18.00 - j 25.0
9.90 - j 19.2
4.35 - j 11.4
Z in - gate shunted by 25W
Z OL - conjugate of optimum load impedance for 250W at 150V
7-2003
0.001
10-5
050-4908 Rev C
Z JC, THERMAL IMPEDANCE (°C/W)
q
D=0.5
ARF448A/448B(G)
40.68 MHz Test Circuit
Parts List
C1 -- 1800pF 100V chip
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 1" #16 AWG into hairpin ~9.6nH
L2 -- 6t #16 AWG .25" ID ~165nH
L3 -- 10t #18 AWG .25" ID ~0.47µH
L4 -- VK200-4B ferrite choke ~3µH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 9:1 Broadband Transformer
RF Input
L4
+
C6
-
C7
150V
L3
L2
L1
C5
C4
RF Output
C3
DUT
T1
C1
C2
R1
40.48 MHz Test Circuit
TO-247 Package Outline
e3 100% Sn Plated
Top View
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Source
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
7-2003
0.40 (.016)
0.79 (.031)
050-4908 Rev C
5.38 (.212)
6.20 (.244)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
Device
ARF448A
ARF448B
Gate
Drain
Source
Source
Drain
Gate