ARF448A(G) ARF448B(G) D G S *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: ¥ ¥ ¥ Low Cost Common Source RF Package. Output Power = 140 Watts. Very High Breakdown for Improved Ruggedness. Gain = 15dB (Class C) Low Thermal Resistance. Efficiency = 75% Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF448A/448B(G) VDSS Drain-Source Voltage 450 VDGO Drain-Gate Voltage 450 ID Continuous Drain Current @ TC = 25°C UNIT Volts 15 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 230 Watts Junction to Case 0.55 °C/W RqJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) 450 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) 1 TYP MAX (I D(ON) = 7.5A, VGS = 10V) 3 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 25V, ID = 7.5A) 5 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 8.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts mA nA mhos 5 Volts 7-2003 BVDSS Characteristic / Test Conditions 050-4908 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol ARF448A/448B(G) Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1400 1700 150 200 f = 1 MHz 65 100 VGS = 15V 7 15 VDD = 0.5 VDSS 5 10 ID = ID[Cont.] @ 25°C 23 40 RG = 1.6W 12 25 MAX VGS = 0V VDS = 150V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 20:1 VDD = 150V Pout = 140W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C VDD = 150V 25 CAPACITANCE (pf) Pout = 250W 20 GAIN (dB) Ciss 15 10 20 30 40 50 60 65 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Crss 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 70 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250mSEC. PULSE TEST @ <0.5 % DUTY CYCLE 15 10 5 Coss 50 20 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-4908 Rev B 25 500 100 5 0 10 1000 10mS OPERATION HERE LIMITED BY RDS (ON) 10 100mS 1mS 5 10mS 1 .5 .1 100mS TC =+25°C TJ =+150°C SINGLE PULSE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF448A/448B(G) 40 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 0.7 f = 40.68 MHz 180 120 60 0 0 2 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 6.5V 20 6V 5.5V 10 5V 0 GPS, COMMON SOURCE AMPLIFIER GAIN (dB) POUT, POWER OUT (WATTS) 240 Class C VDD = 150V 30 4.5V 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 300 VGS=8, 10 & 15V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 17 Class C VDD = 150V 16 f = 40.68 MHz 15 14 13 0 60 120 180 240 300 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 0.6 0.1 0.2 0.1 0.05 0.05 Note: 0.02 0.01 PDM 0.01 t1 SINGLE PULSE 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZqJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class C Large Signal Input-Output Impedance Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 Z in (W) 20.90 - j 9.2 2.40 - j 6.8 0.57 - j 2.6 0.31 - j 0.5 0.44 + j 1.9 Z OL (W) 56.00 - j 06.0 37.00 - j 26.0 18.00 - j 25.0 9.90 - j 19.2 4.35 - j 11.4 Z in - gate shunted by 25W Z OL - conjugate of optimum load impedance for 250W at 150V 7-2003 0.001 10-5 050-4908 Rev C Z JC, THERMAL IMPEDANCE (°C/W) q D=0.5 ARF448A/448B(G) 40.68 MHz Test Circuit Parts List C1 -- 1800pF 100V chip C2-C4 -- Arco 463 Mica Trimmer C5-C7 -- 1nF 500V COG chip L1 -- 1" #16 AWG into hairpin ~9.6nH L2 -- 6t #16 AWG .25" ID ~165nH L3 -- 10t #18 AWG .25" ID ~0.47µH L4 -- VK200-4B ferrite choke ~3µH R1 -- 25 Ohm 1/2W Carbon T1 -- 9:1 Broadband Transformer RF Input L4 + C6 - C7 150V L3 L2 L1 C5 C4 RF Output C3 DUT T1 C1 C2 R1 40.48 MHz Test Circuit TO-247 Package Outline e3 100% Sn Plated Top View 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 7-2003 0.40 (.016) 0.79 (.031) 050-4908 Rev C 5.38 (.212) 6.20 (.244) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Device ARF448A ARF448B Gate Drain Source Source Drain Gate