APT80GP60J 600V ® POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. 27 2 T- C G SO "UL Recognized" • Low Conduction Loss • 100 kHz operation @ 400V, 39A • Low Gate Charge • 50 kHz operation @ 400V, 59A • Ultrafast Tail Current shutoff • SSOA rated ISOTOP ® C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 I C1 Continuous Collector Current @ TC = 25°C 151 I C2 Continuous Collector Current @ TC = 110°C 68 I CM Pulsed Collector Current VGEM SSOA PD TJ,TSTG TL UNIT APT80GP60J 1 Volts Amps 330 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C 330A @ 600V 462 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS MIN BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125°C) 2.1 3 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 1.0 2 Gate-Emitter Leakage Current (VGE = ±20V) UNIT Volts mA 5 ±100 Rev B CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. nA 11-2003 Characteristic / Test Conditions APT Website - http://www.advancedpower.com 050-7426 Symbol APT80GP60J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA Total Gate Charge 3 Gate-Emitter Charge TYP Capacitance 9840 VGE = 0V, VCE = 25V 735 f = 1 MHz 40 Gate Charge VGE = 15V 7.5 280 VCE = 300V 65 I C = 80A 85 Gate-Collector ("Miller ") Charge Switching SOA MIN TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 330 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon2 Eoff I C = 80A 78 4 Turn-on Switching Energy (Diode) 5 Eon1 116 µJ 1199 29 VGE = 15V 149 I C = 80A 84 Current Fall Time Turn-off Switching Energy 1536 Inductive Switching (125°C) VCC = 400V Turn-off Delay Time 40 R G = 5Ω 4 Turn-on Switching Energy (Diode) ns 795 TJ = +25°C 6 Current Rise Time Turn-on Switching Energy 40 R G = 5Ω Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 29 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC = 400V 5 ns 795 TJ = +125°C 2153 6 µJ 1690 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .27 RΘJC Junction to Case (DIODE) N/A Package Weight 29.2 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7426 Rev B 11-2003 APT Reserves the right to change, without notice, the specifications and information contained herein. APT80GP60J TYPICAL PERFORMANCE CURVES 120 80 60 TC=25°C 40 TC=-55°C TC=125°C 20 IC, COLLECTOR CURRENT (A) VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 100 0 TC=-55°C 60 40 TC=25°C TC=125°C 20 0 FIGURE 2, Output Characteristics (VGE = 10V) 16 TJ = -55°C 400 300 200 TJ = 25°C 100 TJ = 125°C VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 500 14 IC = 80A TJ = 25°C VCE=120V 12 VCE=300V 10 8 VCE=480V 6 4 2 0 1 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC= 160A 3 2.5 IC= 80A 2 IC= 40A 1.5 1 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.05 1.0 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 300 3 IC= 160A 2.5 IC= 80A 2 IC=40A 1.5 1 0.5 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 200 IC, DC COLLECTOR CURRENT(A) 1.10 100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate Charge 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 1.2 1.15 50 160 120 80 11-2003 3.5 0 40 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature Rev B 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 80 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 100 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST <0.5 % DUTY CYCLE BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) VGE = 10V. 250µs PULSE TEST <0.5 % DUTY CYCLE 050-7426 IC, COLLECTOR CURRENT (A) 120 APT80GP60J 35 VGE= 15V 30 25 20 15 10 VCE = 400V TJ = 25°C, TJ =125°C RG = 5Ω L = 100 µH 5 60 40 VCE = 400V RG = 5Ω L = 100 µH 20 TJ = 25 or 125°C,VGE = 15V 50 40 30 100 80 60 20 40 10 20 3000 TJ =125°C, VGE=15V 2500 2000 1500 1000 500 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current Eoff 120A Eon2 80A 3000 Eoff 80A 2000 Eon2 40A 1000 Eoff40A 5 3000 TJ = 125°C, VGE = 10V or 15V 2000 1000 TJ = 25°C, VGE = 10V or 15V 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current Eon2 120A 4000 0 VCE = 400V RG = 5Ω L = 100 µH 4000 VCE = 400V VGE = +15V TJ = 125°C 5000 VCE = 400V RG = 5Ω L = 100 µH 0 10 15 20 25 30 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) 6000 TJ = 25°C, VGE = 10V or 15V 4000 VCE = 400V RG = 5Ω L = 100 µH 3500 TJ = 125°C, VGE = 10V or 15V 120 EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) VGE =15V,TJ=25°C 80 140 VCE = 400V RG = 5Ω L = 100 µH TJ = 25°C, VGE=15V SWITCHING ENERGY LOSSES (µJ) 100 70 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 11-2003 120 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 4000 Rev B 140 0 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 050-7426 VGE =15V,TJ=125°C 160 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 60 tr, RISE TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns) 180 tf, FALL TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 40 VCE = 400V VGE = +15V RG = 5Ω Eon2 120A 3000 Eoff 120A Eon2 80A 2000 Eoff 80A 1000 Eon2 40A Eoff 40A 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 20,000 10,000 APT80GP60J 300 Cies 2m50 1,000 IC, COLLECTOR CURRENT (A) 5,000 Coes 500 100 50 Cres 10 0 10 20 30 40 50 200 150 100 50 0 0 100 200 300 400 500 600 700 0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0.05 Note: t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 190 RC MODEL Junction temp (°C) 100 0.00119F 0.0584 0.0354F 0.185 0.463F Case temperature(°C) FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 50 Fmax = min(f max1 , f max 2 ) 10 TJ = 125°C TC = 75°C D = 50 % VCE = 400V RG = 5 Ω f max1 = 0.05 t d (on ) + t r + t d(off ) + t f f max 2 = Pdiss − Pcond E on 2 + E off Pdiss = 1 10 20 30 40 50 60 70 80 90 100 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current TJ − TC R θJC 11-2003 0.0260 FMAX, OPERATING FREQUENCY (kHz) Power (watts) 1.0 Rev B 10-5 t1 050-7426 0 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 APT80GP60J Gate Voltage APT60DF60 10% T J = 125 C td(on) IC V CC V CE 90% Collector Current tr A D.U.T. 5% 10% 5% Switching Energy Collector Voltage Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage TJ = 125 C A td(off) Collector Voltage 90% V CE IC 100uH V CLAMP tf B 10% Collector Current Switching Energy A 0 DRIVER* Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) Rev B 11-2003 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 050-7426 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) * Emitter Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. D.U.T.