Document No.001-87917 Rev. ** ECN # 4026931 Cypress Semiconductor Technology Qualification Report QTP# 020206 June 2013 QUAD HOTLINK II FAMILY B53D-3 TECHNOLOGY, FAB 4 CYP15G0101DXB CYV15G0101DXB CYW15G0101DXB Single-Channel HOTLink II™ Transceiver CYP15G0201DXB CYV15G0201DXB CYW15G0201DXB Dual-Channel HOTLink II™ Transceiver CYP15G0401DXB CYV15G0401DXB CYW15G0401DXB Quad HOTLink II™ Transceiver CYP15G0402DXB CYV15G0402DXB Quad HOTLink II™ SERDES CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 14 Document No.001-87917 Rev. ** ECN # 4026931 PRODUCT QUALIFICATION HISTORY Qual Description of Qualification Purpose Report 002202 Technology transfer from Fab1 to Fab4 using CY7B993V / CY7B994V Date Comp. Mar 01 012603 Seven layer mask change to enhance functionality (Fab4) Feb 02 022202 New Product CYP15G0101DXA/ CYP15G0201DXA by extension May 02 023306 All layers changed to CYP15G0401DXB/ CYP15G0402DXB to enhance functionality. Dec 02 020206 One mask changed to CYP15G0101DXA/ CYP15G0201DXA to enhance functionality Jan 03 040706 Process changes (B53D-3GR). 4 Mask changes and changing the emitter poly deposition temperature from 550°C to 620°C Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 14 Apr 04 Document No.001-87917 Rev. ** ECN # 4026931 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify Quad HOTLink II family in technology B53D-3, Fab4 Marketing Part #: CYP15G0101/201/401/402DX*, CYV15G0101/201/401/402DX*, CYW15G0101/201/401DX* Device Description: 3.3V, Commercial and Industrial, available in 256-balls L2BGA and 100/196-balls FBGA package Cypress Division: Cypress Semiconductor Corporation – Data Com Division (DCD) Overall Die (or Mask) REV: What ID markings on Die: Rev. C 7B9291C/7B9294C TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal 1: 500A TiW+6,000A Al/0.5%Cu/300A TiW Metal 2: 300A TiW+8,000A Al/0.5%Cu/300A TiW Passivation Type and Materials: 1,000A TEOS + 9,000A SiN Free Phosphorus contents in top glass layer (%): 0% Number of Transistors: 362,417 Number of Gates: 90,604 Generic Process Technology/Design Rule ( -drawn): BiCMOS, 0.25 um, Double Metal Gate Oxide Material/Thickness (MOS): SiO2 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/B53D-3 PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 100/196-ball FBGA ASE Taiwan (TAIWN-G) 256-ball L2BGA ASE-Taiwan (TAIWN-G) Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 14 Document No.001-87917 Rev. ** ECN # 4026931 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BB100 100-ball Thin Ball Grid Array (FBGA) PLASKON SMT-B-1 V-O per UL94 Oxygen Rating Index: >28% Substrate Material: BT Resin Lead Finish, Composition / Thickness: Solder Ball, 63%Sn, 37%Pb Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: Ablestik 8355F Die Attach Method: Epoxy Bond Diagram Designation: 10-04463 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C/W: 27.14°C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: ASE Taiwan ELECTRICAL TEST / FINISH DESCRIPTION Test Location: KYEC, TAIWAN, CHIPMOS TAIWAN Fault Coverage: 100% Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 14 Document No.001-87917 Rev. ** ECN # 4026931 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: BG256L2 Cavity down 256-ball, Ball Grid Array (L2BGA) with heat sink Hysol 4450/4451 Mold Compound Flammability Rating: V-O per UL 94 Oxygen Rating Index: >28% Substrate Material: BT with copper stiffener and heat sink Lead Finish, Composition / Thickness: Solder Ball, 63%Sn, 37%Pb Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: QMI Die Attach Material: QMI 505MT Die Attach Method: Epoxy Bond Diagram Designation 10-04930 Wire Bond Method: Thermo sonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C: 14.1°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-41017 Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASE Taiwan (TAIWN-G), CHIPMOS, Taiwan, KYEC, Taiwan Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 14 Document No.001-87917 Rev. ** ECN # 4026931 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Dynamic Operating Condition, Vcc = 3.65V, 125°C Dynamic Operating Condition, Vcc = 3.8V, 125°C Dynamic Operating Condition, Vcc = 4.0V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 3.65V, 125°C Dynamic Operating Condition, Vcc = 3.8V, 125°C Dynamic Operating Condition, Vcc = 4.0V, 125°C P Long Life Verification Dynamic Operating Condition, Vcc = 4.0V, 125°C P High Temp Steady State Life Test Temperature Cycle Static Operating Condition, Vcc = 3.63V, 125°C MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL3 192 Hrs., 30°C/60%RH+3IR-Reflow, 220°C+0, -5°C Precondition: JESD22 Moisture Sensitivity MSL3 192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+0, -5°C P P Pressure Cooker 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 220°C+0, -5°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+0, -5°C P High Accelerated Saturation Test (HAST) 130°C, 85%RH, 3.63V Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 220°C+0, -5°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+0, -5°C P Current Density Low Temperature Operating Life High Temperature Storage Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) SEM X-Section Age Bond Strength Acoustic Microscopy, MSL 3 Static Latch up Sensitivity Meets the Technology Device Level Reliability Specifications -30°C, 4.3V 150°C, no bias 2,200V/1,100V MIL-STD-883, Method 3015 2,200V JESD22, Method A114-B 500V JESD22-C101 MIL-STD-883C, Method 2018.2 MIL-STD-883C, Method 2011 J-STD-020 125C, 10V, ± 300mA In accordance with JEDEC 17 P P P P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 14 P P P P P P Document No.001-87917 Rev. ** ECN # 4026931 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Acceleration Factor3 Failure Rate High Temperature Operating Life Early Failure Rate 4,969 Devices 0 N/A N/A 0 PPM High Temperature Operating Life 1,,2 Long Term Failure Rate 1,112,552 HRs 0 0.7 55 15 FIT 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 14 Document No.001-87917 Rev. ** ECN # 4026931 Reliability Test Data QTP #: 002202 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G COMP 15 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 15 0 CY7B994V-AC 4030964 610045835 TAIWN-G 15 0 STRESS: COMP HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 4.0V, >VCC MAX CY7B994V-AC 4030964 610042957 TAIWN-G 96 679 0 CY7B994V-AC 4030964 610045835 TAIWN-G 96 775 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 4.0V, >Vcc Max CY7B994V-AC 4030964 610042957 TAIWN-G 168 330 0 CY7B994V-AC 4030964 610042957 TAIWN-G 1000 328 0 CY7B994V-AC 4030965 610045835 TAIWN-G 168 330 0 CY7B994V-AC 4030965 610045835 TAIWN-G 1000 239 0 CY7B994V-AC 4030965 610045835 TAIWN-G 2000 239 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 125C, 3.63V,>Vcc Max CY7B993V-AC 4021265 610036043 TAIWN-G 168 78 0 CY7B993V-AC 4021265 610036043 TAIWN-G 336 78 0 STRESS: HIGH TEMP STORGAE, PLASTIC, 150C CY7B993V-AC 4021265 610036043 TAIWN-G 500 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 1000 48 0 TAIWN-G 500 47 0 TAIWN-G COMP 3 0 STRESS: LOW TEMPERATURE OPERATING LIKE, -30C,4.3V CY7B993V-AC STRESS: 4021265 610036043 DYNAMIC LATCH-UP TESTING 6.79V CY7B993V-AC STRESS: 4021265 610036043 ESD-CHARGE DEVICE MODEL, 500V CY7B993V-AC 4021265 610036043 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610045835 TAIWN-G COMP 9 0 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7B993V-AC 4021265 610036043 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610045835 TAIWN-G COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 8 of 14 Document No.001-87917 Rev. ** ECN # 4026931 Reliability Test Data QTP #: 002202 STRESS: STATIC LATCH-UP TESTING 125C, 10V, +/-300mA CY7B993V-AC 4021265 610036043 TAIWN-G COMP 3 0 CY7B994V-AC 4030965 610045835 TAIWN-G COMP 3 0 CY7B994V-AC 4030964 610052500 TAIWN-G COMP 3 0 610036043 TAIWN-G COMP 30 0 STRESS: BOND PULL CY7B993V-AC STRESS: 4021265 AGE BOND STRENGTH CY7B994V-AC 4030964 610052500 TAIWN-G COMP 15 0 CY7B994V-AC 4030965 610052501 TAIWN-G COMP 15 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7B993V-AC STRESS: 4021265 610036043 TAIWN-G 128 46 0 PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G 168 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 168 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 168 46 0 STRESS: TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G 300 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 500 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 1000 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 300 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 500 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 1000 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 300 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 500 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 14 Document No.001-87917 Rev. ** ECN # 4026931 Reliability Test Data QTP #: 012603 Device STRESS: Fab Lot # Rej Failure Mechanism 4140699 610141195 TAIWN-G 96 1007 0 4140699 610141195 TAIWN-G 168 1004 0 4140699 610141195 TAIWN-G COMP 9 0 4140699 610141195 TAIWN-G COMP 9 0 TAIWN-G COMP 3 0 ESD-HBM DONE, 2,200V CYP15G0401DXA -BGC (7B9294A) STRESS: Samp ESD-CDM, 500V CYP15G0401DXA -BGC (7B9294A) STRESS: Duration HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 3.65V, >Vcc Max CYP15G0401DXA -BGC (7B9294A) STRESS: Assy Loc HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 3.65V, >VCC MAX CYP15G0401DXA -BGC (7B9294A) STRESS: Assy Lot # STATIC LATCH-UP TESTING, 125C, 10V, +/-300mA CYP15G0401DXA -BGC (7B9294A) 4140699 610141195 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 14 Document No.001-87917 Rev. ** ECN # 4026931 Reliability Test Data QTP #: 023306 Device STRESS: Assy Lot # Assy Loc Duration Samp Rej 4238986 610245989 TAIWN-G COMP 15 0 ACOUSTIC, MSL3 CYP15G0401DXB -BLC (7B9294C) STRESS: Fab Lot # HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 3.65V, >VCC MAX CYP15G0401DXB -BLC (7B9294C) 4238986 610245989 TAIWN-G 96 698 0 CYP15G0401DXB -BLC (7B9294C) 4238986 610246186/50118 TAIWN-G 96 303 0 610245989 TAIWN-G COMP 9 0 TAIWN-G COMP 9 0 TAIWN-G COMP 3 0 47 0 STRESS: ESD-CDM DEVICE MODEL, 500V CYP15G0401DXB -BLC (7B9294C) STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYP15G0401DXB -BLC (7B9294C) STRESS: 4238986 610245989 STATIC LATCH-UP TESTING, 125C, 10V, +/-300mA CYP15G0401DXB -BLC (7B9294C) STRESS: 4238986 4238986 610245989 PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CYP15G0401DXB -BLC (7B9294C) 4238986 610245989 TAIWN-G 176 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 11 of 14 Failure Mechanism Document No.001-87917 Rev. ** ECN # 4026931 Reliability Test Data QTP #: 020206 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 3.65V, >VCC MAX CYP15G0401DXB -BLC (7B9294C) 4238986 610245989 TAIWN-G 96 698 0 CYP15G0401DXB -BLC (7B9294C) 4238986 610246186/50118 TAIWN-G 96 303 0 610248219 TAIWN-G COMP 9 0 TAIWN-G COMP 9 0 TAIWN-G COMP 3 0 168 49 0 STRESS: ESD-CDM DEVICE MODEL, 500V CYP15G0401DXB -BLC (7B9294C) STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYP15G0401DXB -BLC (7B9294C) STRESS: 610248219 4241747 610248219 PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CYP15G0401DXB -BLC (7B9294C) STRESS: 4241747 STATIC LATCH-UP TESTING, 125C, 10V, +/-300mA CYP15G0401DXB -BLC (7B9294C) STRESS: 4241747 4241747 610248219 TAIWN-G TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CYP15G0401DXB -BLC (7B9294C) 4241747 610248219 TAIWN-G 300 50 0 CYP15G0401DXB -BLC (7B9294C) 4241747 610248219 TAIWN-G 500 50 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 12 of 14 Failure Mechanism Document No.001-87917 Rev. ** ECN # 4026931 Reliability Test Data QTP #: 040706 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 3.65V, >Vcc Max CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G 96 1003 0 CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G 96 504 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 3.65V, >Vcc Max CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G 168 192 0 CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G 168 180 0 CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G 500 180 0 STRESS: ESD-CDM DEVICE MODEL, 500V CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G COMP 9 0 CYV15G0402DXB -BGC (7B9254C) 4330065 610406937/8/9 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G COMP 9 0 CYV15G0402DXB -BGC (7B9254C) 4330065 610406937/8/9 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYV15G0402DXB -BGC (7B9254C) 4322602 610331374/6 TAIWN-G COMP 3 0 CYV15G0402DXB -BGC (7B9254C) 4330065 610406937/8/9 TAIWN-G COMP 3 0 COMP 3 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING, 125C, 5.0V, +/-300mA CYV15G0402DXB -BGC (7B9254C) STRESS: 4322602 610331374/6 TAIWN-G STATIC LATCH-UP TESTING, 125C, 7.4V, +/-300mA CYV15G0402DXB -BGC (7B9254C) 4330065 610406937/8/9 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 14 Failure Mechanism Document No.001-87917 Rev. ** ECN # 4026931 Document History Page Document Title: QTP # 020206 : QUAD HOTLINK II, ( CYP15G0101/201/401/402DX*, CYV15G0101/201/401/402DX*, CYW15G0101/201/401DX*) B53D-3 TECHNOLOGY, FAB 4 Document Number: 001-87917 Rev. ECN Orig. of No. Change ** 4026931 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-759 and not in spec format. Initiated spec for QTP 020206 and data from HGA-759 was transferred to qualification report spec template. Updated package availability based on current qualified test & assembly site. Deleted Cypress reference Spec and replaced with Industry Standards. Deleted previous package assembly information and replaced with existing and qualified assembly site Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 14