2830 S. Fairview Street
Santa Ana, CA 92704
Phone: (714) 979-8220
Fax: (714) 559-5989
DESCRIPTION:
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MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
N-Channel enhancement mode high density MOSFET die
Passivation: oxynitride, 4um
Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
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Low On-state resistance
Avalanche and Surge Rated
High Freq. Switching
Ultra Low Leakage Current
UIS rated
Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix
MAXIMUM RATINGS:
SYMBOL
PARAMETER
VDSS
VGS
ID1
ID2
IDM1
IAR
EAR
EAS
TJ, TSTG
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ TC = 25°°C
Continuous Drain Current @ TC = 100°°C
Pulsed Drain Current ① @ TC = 25°°C
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
VALUE
UNIT
1000
±20
1
.8
4
1
TBD
TBD
-55 to 150
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
°C
STATIC ELECTRICAL CHARACTERISTICS:
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
BVDSS
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
1000
VGS(TH)2
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37°°C
TYP
MAX
Volts
3.4
2
UNIT
Volts
3.5
4.5
Volts
13.5
ohm
VGS(TH)1
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25°°C
RDS(ON)1
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25°°C)
12.5
RDS(ON)2
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37°C)
12.5
ohm
RDS(ON)3
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25°C)
11.5
ohm
RDS(ON)4
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60°C)
15
ohm
23.5
ohm
RDS(ON)5
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125°°C)
IDSS1
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25°°C)
10
1
uA
uA
IDSS2
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37°C)
IDSS3
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125°°C)
100
uA
IGSS1
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
±100
nA
IGSS2
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37°°C
500
nA
IGSS3
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125°°C
MSC1054.PDF 3/22/01
10
nA
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
DYNAMIC CHARACTERISTICS:
SYMBOL
CHARACTERISTIC
Ciss
Input Capacitance
Coss
Crss
Qg
TYP
MAX
UNIT
VGS = 0V
290
350
pF
Output Capacitance
VDS = 25V
36
45
pF
Reverse Transfer Capacitance
f = 1 MHz
15
25
pF
Total Gate Charge ④
VGS = 10V
20
nC
Qgs
Gate-Source Charge
VDS = 0.5BVDSS
1
nC
Qgd
Gate-Drain ("Miller") Charge
10
nC
td (on)
Turn-on Delay Time
IC = 20 mA
Resistive Switching (25°°C)
6.3
ns
tr
Rise Time
VGS = 10V, VDS = 0.5BVDSS
5.9
ns
td (off)
Turn-off Delay Time
ID = 20 mA
315
ns
tf
td (on)
tr
td (off)
tf
Fall Time
2.6
us
Turn-On Delay Time
Rg = 1.6Ω
Ω
Resistive Switching (25°°C)
6.3
ns
Rise Time
VGS = 10V, VDS = 0.5BVDSS
5.8
ns
VSD
Diode Forward Voltage
VGS =0 V, IS = 1 A
trr
Reverse Recovery Time
IS = 1 A, d IS / dt = 100 A/us
Qrr
Reverse Recovery Charge
IS = 1 A, d IS / dt = 100 A/us
Turn-off Delay Time
Fall Time
TEST CONDITIONS
MIN
ID = 100 mA
76
ns
Rg = 1.6Ω
Ω
470
ns
1
V
300
400
ns
700
1200
uC
TYP
MAX
UNIT
① Repetitive Rating: Pulse width limited by maximum junction temperature.
② IC = IC2, VCC = 50V, RCE = 25Ω
Ω , L = 300µ
µH, TJ = 25°°C
③ TJ = 150°°C
④ See MIL-STD-750 Method 3471
DIE PROBE PARAMETERS (100% TESTS):
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
BVDSS
VGS(TH)
RDS (ON)
IDSS
IGSS
Drain-Source Breakdown Voltage (VGS = 0V, IC = 0.25mA)
µA, TJ = 25°°C
Gate Threshold Voltage (VDS = VGS, IC = 1000µ
Drain-Source On-Resistance (VGS = 10V, IC = 1 A, TJ = 25°°C)
Zero Gate Voltage Drain Current (VDS = 800 V, VGS = 0V, TJ = 25°°C)
Gate-Source Leakage Current (VGS = ±20 V, VDS =0V)
1000
2
MSC1054.PDF 3/22/01
Volts
4.5
14
25
±100
ohm
uA
nA
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
MECHANICAL CHARACTERISTICS
V G S v s V D S v s ID
4 .9
4 .7
VGS(V)
4 .5
4 .3
4 .1
ID = 1 0 0 m A
ID = 5 0 m A
3 .9
ID = 1 0 m A
ID = 1 m A
3 .7
3 .5
0 .0 1
0 .1
1
10
100
V D S (V )
MSC1054.PDF 3/22/01
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified