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APTGT30DA170T1G
Boost chopper
Trench + Field Stop IGBT3
Power Module
5
6
VCES = 1700V
IC = 30A @ Tc = 80°C
Application
11



CR1
Features
3
4
Q2
NTC

CR2
9
10
1
2
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
12



Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits






Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
1700
45
30
70
±20
210
Tj = 125°C
60A@1600V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTGT30DA170T1G – Rev 1 October, 2012
Symbol
VCES
APTGT30DA170T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 30A
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
5.2
Typ
2.0
2.4
5.8
Max
Unit
250
2.4
µA
6.4
600
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 30A
RG = 18
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 30A
RG = 18
VGE = ±15V
Tj = 125°C
VBus = 900V
IC = 30A
Tj = 125°C
RG = 18
Min
Test Conditions
Min
1700
Typ
2500
90
100
70
pF
ns
650
80
100
70
750
ns
100
17
mJ
15
Chopper diode ratings and characteristics
IRM
IF
Maximum Reverse Leakage Current
VR=1700V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
IF = 50A
VGE = 0V
IF = 50A
VR = 900V
di/dt =800A/µs
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Typ
Tj = 25°C
Tj = 125°C
TC=80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
50
1.8
1.9
385
490
14
Tj = 125°C
Tj = 25°C
Tj = 125°C
23
6
12
Max
250
500
Unit
V
µA
A
2.2
V
ns
µC
mJ
2–6
APTGT30DA170T1G – Rev 1 October, 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT30DA170T1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
4000
-40
-40
-40
2
Max
0.60
0.70
Unit
°C/W
V
150
125
100
3
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T


exp  B25 / 85 
 
 T25 T 

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTGT30DA170T1G – Rev 1 October, 2012
SP1 Package outline (dimensions in mm)
APTGT30DA170T1G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
60
60
TJ = 125°C
50
TJ=25°C
VGE=19V
40
40
IC (A)
TJ=125°C
30
VGE=15V
30
20
20
10
10
0
VGE=13V
VGE=9V
0
0
0.5
1
1.5
2 2.5
VCE (V)
3
3.5
4
0
VCE = 900V
VGE = 15V
RG = 18 Ω
TJ = 125°C
35
TJ=25°C
30
30
E (mJ)
IC (A)
40
TJ=125°C
20
4
5
25
Eon
Eoff
20
15
Er
10
10
TJ=125°C
5
0
0
5
6
7
8
9
10
0
11
20
Switching Energy Losses vs Gate Resistance
60
80
100
Reverse Bias Safe Operating Area
80
70
VCE = 900V
VGE =15V
IC = 30A
TJ = 125°C
60
Eon
50
IC (A)
60
40
IC (A)
VGE (V)
E (mJ)
3
VCE (V)
40
50
40
Eoff
40
30
VGE=15V
TJ=125°C
RG=18 Ω
20
20
Er
10
0
0
0
20
40
60
80
100
Gate Resistance (ohms)
0.6
0.5
0
120
400
800
1200
1600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
Thermal Impedance (°C/W)
2
Energy losses vs Collector Current
Transfert Characteristics
60
1
IGBT
0.9
0.7
0.4
0.3
0.2
0.1
0
0.00001
0.5
0.3
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4–6
APTGT30DA170T1G – Rev 1 October, 2012
IC (A)
50
APTGT30DA170T1G
Forward Characteristic of diode
100
VCE=900V
D=50%
RG=18 Ω
TJ=125°C
TC=75°C
ZVS
40
35
30
25
20
ZCS
15
hard
switching
10
TJ=25°C
80
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
45
60
TJ=125°C
40
20
TJ=125°C
5
0
0
0
10
20
30
IC (A)
40
50
0
60
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
Diode
0.9
0.6
0.5
0.4
0.3
0.2
0.1
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
5–6
APTGT30DA170T1G – Rev 1 October, 2012
Thermal Impedance (°C/W)
0.8
APTGT30DA170T1G
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6–6
APTGT30DA170T1G – Rev 1 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.