TYPICAL PERFORMANCE CURVES 600V APT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® (B) TO • High Freq. Switching to 100KHz • Low Tail Current • Ultra Low Leakage Current D 3 PA K 47 (S) The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop -2 C G G C E E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GT60BR_SR(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD Pulsed Collector Current 7 @ TC = 25°C TL Volts 110 52 1 Amps 150 150A @ 600V Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation TJ,TSTG UNIT Watts 446 Operating and Storage Junction Temperature Range -55 to 150 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) 600 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) I CES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) MAX 3 4 5 1.7 2.0 2.5 25 2 Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MicrosemiWebsite-http://www.microsemi.com Units Volts 2.2 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) I GES TYP μA TBD 120 nA 052-6273 Rev D 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GT60BR_SR(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Total Gate Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr td(off ) tf Eon1 153 Gate Charge 7.5 VGE = 15V 240 VCE = 300V 20 I C = 50A 110 TJ = 150°C, R G = 4.3Ω, VGE = 15V, L = 100μH,VCE = 600V 32 Turn-off Delay Time 240 Current Fall Time I C = 50A 36 Turn-on Switching Energy RG = 4.3Ω 995 TJ = +25°C 5 14 Current Rise Time VCC = 400V 32 Turn-off Delay Time VGE = 15V 270 Turn-on Delay Time I C = 50A Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy nC ns μJ 55 ns 95 1035 RG = 4.3Ω 44 Eon2 V 1070 Inductive Switching (125°C) Eon1 pF 1110 6 UNIT A VGE = 15V 4 MAX 150 Current Rise Time Turn-off Switching Energy tf f = 1 MHz 14 Eoff td(off ) 250 VCC = 400V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V Inductive Switching (25°C) Eon2 td(on) 2660 Gate-Emitter Charge Gate-Collector ("Miller ") Charge TYP Capacitance 3 Qgc MIN TJ = +125°C μJ 1655 6 1505 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .28 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6273 Rev D 3-2012 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. UNIT °C/W gm TYPICAL PERFORMANCE CURVES APT50GT60BR_SR(G) 200 160 V GE 180 IC, COLLECTOR CURRENT (A) TJ = 25°C 100 TJ = -55°C 80 TJ = 125°C 60 40 10 11V 160 10V 140 120 9V 100 80 8V 60 40 7V 20 0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 5 6V 0 FIGURE 1, Output Characteristics(TJ = 25°C) 160 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) I = 50A C T = 25°C J 14 TJ = -55°C 100 80 60 TJ = 25°C 40 TJ = 125°C 20 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 12 0 50 FIGURE 3, Transfer Characteristics TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 4 IC = 100A 3 IC = 50A 2 IC = 25A 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 200 250 FIGURE 4, Gate Charge 6 2.5 IC = 50A 2.0 1.5 0.5 140 IC, DC COLLECTOR CURRENT(A) 1.10 0.95 0.90 0.85 0.80 0 120 100 80 Lead Temperatur e Limited 60 40 20 0.75 0.70 -50 VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 160 1.00 IC = 25A 1.0 1.15 1.05 IC = 100A 3.0 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 100 150 GATE CHARGE (nC) 3.5 5 0 20 FIGURE 2, Output Characteristics (TJ = 125°C) 120 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 16 250μs PULSE TEST<0.5 % DUTY CYCLE 140 0 13V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 052-6273 Rev D 3-2012 IC, COLLECTOR CURRENT (A) 120 0 15V = 15V 140 APT50GT60BR_SR(G) 350 20 VGE = 15V 15 10 5 VCE = 400V TJ = 25°C, or 125°C 0 RG = 4.3Ω L = 100μH 250 150 50 VCE = 400V RG = 4.3Ω 0 20 40 60 80 100 125 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 180 RG = 4.3Ω, L = 100μH, VCE = 400V 70 140 60 120 tf, FALL TIME (ns) 160 50 40 30 RG = 4.3Ω, L = 100μH, VCE = 400V TJ = 125°C, VGE = 15V 100 80 60 40 TJ = 25 or 125°C,VGE = 15V TJ = 25°C, VGE = 15V 20 10 0 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000 EOFF, TURN OFF ENERGY LOSS (μJ) G TJ = 125°C 3000 2000 1000 TJ = 25°C 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current V = 400V CE V = +15V GE R = 4.3Ω 3000 G TJ = 125°C 2500 2000 1500 1000 TJ = 25°C 500 0 0 10,000 0 3500 V = 400V CE V = +15V GE R = 4.3Ω 4000 0 VGE =15V,TJ=25°C 200 80 0 VGE =15V,TJ=125°C L = 100μH 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 20 EON2, TURN ON ENERGY LOSS (μJ) 300 0 0 90 tr, RISE TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 5,000 V = 400V CE V = +15V GE T = 125°C V = 400V CE V = +15V GE R = 4.3Ω Eon2,100A 6,000 Eoff,100A 4,000 Eoff,50A Eon2,50A 2,000 SWITCHING ENERGY LOSSES (μJ) SWITCHING ENERGY LOSSES (μJ) 052-6273 Rev D 3-2012 J 8,000 G Eoff,100A 3,000 2,000 Eon2,50A Eoff,50A 1,000 Eon2,25A Eoff,25A Eon2,25A 0 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance Eon2,100A 4,000 0 Eoff,25A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES APT50GT60BR_SR(G) 160 4,000 140 IC, COLLECTOR CURRENT (A) P C, CAPACITANCE ( F) Cies 1,000 500 120 100 Coes 60 40 20 Cres 100 80 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.30 D = 0.9 0.20 0.7 0.15 0.5 0.10 0.3 P DM Note: t1 SINGLE PULSE 0.05 t2 t 0.1 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.05 0 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration T J (°C) 1.0 T C (°C) 0.114 0.113 Dissipated Powe r (Watts ) 0.0057 0.0276 Z EX T Z EX T are the external therma l impedances: Case to sink, sink to ambient, etc. Set to zero when modeling onl y the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 120 50 F = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf 10 2 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 4.3Ω G 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current max f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 052-6273 Rev D 3-2012 10-5 FMAX, OPERATING FREQUENCY (kHz) ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 APT50GT60BR_SR(G) Gate Voltage APT40DQ60 10% TJ = 125°C td(on) tr Collector Current 90% V CE IC V CC 5% 5% 10% Collector Voltage A D.U.T. Switching Energy Figure 21, Inductive Switching Test Circui Figure 22, Turn-on Switching Waveforms and Definitions t 90% Gate Voltage TJ = 125°C td(off ) 90% Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 3 TO -247 P ackage Outlin e D PAK Package Outlin e e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC Collector (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e3 SAC: Tin, Silver, Copper 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 Collector 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 052-6273 Rev D 3-2012 13.41 (.528) 13.51(.532) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) Gate Collector Emitter 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches ) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs. } Emitter Collector Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead ) Heat Sink (Collector) and Leads are Plated